26-30 GHz GaAs MMIC Power Amplifier L t Alpha Features @ Single Bias Supply Operation (6 V) @ 23 dBm Saturated Output Power at 28 GHz @ 15 dB Small Signal Gain Typical at 28 GHz @ 0.25 um Ti/Pd/Au Gates M@ 100% On-Wafer RF and DC Testing @ 100% Visual Inspection to MIL-STD-883 MT 2010 Description Alphas two-stage balanced Ka band GaAs MMIC power amplifier has a P; gp in excess of 22 dBm with 14 dB associated gain and 10% power added efficiency AA028P1-00 Chip Outline 0.329 0.000 0.790 2.749 J 3.400 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings at 28 GHz. The chip uses Alphas proven 0.25 um Characteristic Value MESFET technology, and is based upon MBE layers and Operating Temperature (Tc) -55C to +90C electron beam lithography for the highest uniformity and Storage Temperature (Ts7) 65C to +150C repeatability. The FETs employ surface passivation to Bias Voltage (Vp) 7 Voc ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate Power In (Pin) 22 dBm a conductive epoxy die attach process. All chips are Junction Temperature (Ty) 175C screened for S-parameters and power characteristics at 28 GHz prior to shipment for guaranteed performance. A broad range of applications exist in both the commercial and high reliability areas where high power and gain are required. Electrical Specifications at 25C (Vps = 6 V) Parameter Symbol Min. Typ. Max. Unit Drain Current (at Saturation) Ibs 300 400 mA Small Signal Gain G 12 15 dB Input Return Loss RL; -16 -10 dB Output Return Loss RLo -18 -10 dB Output Power at 1 dB Gain Compression Pi aB 21 22 dBm Saturated Output Power Pgat 22 23 dBm Gain at Saturation Gsat 9 10 dB Thermal Resistance! Osc 51 C 1.Calculated value based on measurement of discrete FET. Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1 Specifications subject to change without notice. 2/99A 26-30 GHz GaAs MMIC Power Amplifier Typical Performance Data 20 Sat 10 0 a -10 2 Si -20 S22 -30 Si -40 26 27 28 29 30 31 32 Frequency (GHz) Typical Small Signal Performance S-Parameters (Vps = 6 V) Bias Arrangement q > ? O6V Ee pF 50 rr +o LF AF INKS <t : Re) : : RF OUT ro IY = - - tL O6V For biasing on, adjust Vpgs from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. AA028P 1-00 Pout (dBm) (wigp) Nid 27 28 29 30 31 32 Frequency (GHz) Output Characteristics as a Function of Frequency and Input Drive Level (Vps = 6 V) Circuit Schematic Detail A Vps Vos ls! f 4 < RF IN SEE DETAILA RF OUT Vpbs Vos 2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com Specifications subject to change without notice. 2/99A