© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4 1Publication Order Number:
MMBF5457LT1/D
MMBF5457LT1
Preferred Device
JFET − General Purpose
Transistor
N−Channel
Features
•Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 25 Vdc
Drain−Gate Voltage VDG 25 Vdc
Reverse Gate−Source Voltage VGS(r) −25 Vdc
Gate Current IG10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
(TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
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Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
MMBF5457LT1 SOT−23 3000/Tape & Ree
l
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
12
3
2 SOURCE
3
GATE
1 DRAIN
1
6 M G
G
MMBF5457LT1G SOT−23
(Pb−Free) 3000/Tape & Ree
l
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
6 = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar ma
y
vary depending upon manufacturing location
.
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0) V(BR)GSS −25 − − Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS −
−−
−−1.0
−200
nAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc) VGS(off) −0.5 − −6.0 Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 100 mAdc) VGS − −2.5 − Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 2)
(VDS = 15 Vdc, VGS = 0) IDSS 1.0 − 5.0 mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Note 2)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 − 5000 mmhos
Output Common Source Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| − 10 50 mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 4.5 7.0 pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − 1.5 3.0 pF
2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
MMBF5457LT1
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3
TYPICAL CHARACTERISTICS
Figure 1. Noise Figure versus Source
Resistance
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer
Characteristics
1.0
0.4
0.2
0
−1.2
0.8
0.6
0 5 10 15 20 25
0
0.6
0.4
0.2
0.8
1.2
1.0
−0.8 −0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS = 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
VGS(off) ^ −1.2 V
VGS(off) ^ −1.2 V
RS, SOURCE RESISTANCE (Megohms)
14
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0 10
VDS = 15 V
VGS = 0
f = 1 kHz
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4
TYPICAL CHARACTERISTICS
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 5. Common Source Transfer
Characteristics
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 7. Common Source Transfer
Characteristics
0
0
4
3
2
1
0
10
4
2
0
−4
5
510152025
5
4
3
2
1
0
−7
8
6
−6 −5 −4 −3 −2 −1
−5 −3 −2 −1 0
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS(off) ^ −5.8 V
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I, DRAIN CURRENT (mA)
D
I
VDS = 15 V
10
4
2
0
8
6
0 5 10 15 20 25
VGS(off) ^ −5.8 V
VGS = 0 V
VGS = 0 V
−2 V
−1 V
−3 V
−1 V
−2 V
−3 V
−4 V
−5 V
VGS(off) ^ −3.5 V
VGS(off) ^ −3.5 V
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heat-
ing in higher IDSS units reduces IDSS.
MMBF5457LT1
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
bC
L
D
A
E
A1
e
3
12
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.35 0.54 0.69 0.014
2.10 2.40 2.64 0.083
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
HE
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.021 0.029
0.094 0.104
NOM MAX
HE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
MMBF5457LT1
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6
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
MMBF5457LT1/D
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