Revision 1.1
Jan. 2004
3
R0201-BS616LV2016
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS
VDR Vcc for Data Retention CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.5 -- -- V
ICCDR Data Retention Current CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 0.1 1.0 uA
tCDR Chip Deselect to Data
Retention Time 0 -- -- ns
tR Operation Recovery Time
See Retention Waveform
TRC
(2) -- -- ns
SYMBOL PARAMETER CONDITIONS MAX. UNIT
CIN Input
Capacitance VIN=0V 6 pF
CDQ Input/Output
Capacitance VI/O=0V 8 pF
RANGE AMBIENT
TEMPERATURE Vcc
Commercial 0 O C to +70 O C2.4V ~ 5.5V
Industrial -40 O C to +85 O C2.4V ~ 5.5V
1. Typical characteristics are at TA= 25oC. 2. Fmax = 1/tRC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4.IccsB1_Max. is 3uA/ 10uA at Vcc=3V/5V and TA=70oC. 5. Icc_Max. is 30mA(@3V) / 62mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
1. Vcc = 1.5V, TA= + 25OC2.t
RC = Read Cycle Time 3. IccDR_MAX. is 0.7uA at TA=70oC.
ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL PARAMETER RATING UNITS
VTERM Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5 V
TBIAS Temperature Under Bias -40 to +85 O C
TSTG Storage Temperature -60 to +150 O C
PTPower Dissipation 1.0 W
IOUT DC Output Current 20 mA
BSI BS616LV2016
(3)
PARAMETER
NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS
Vcc =3.0V
VIL Guaranteed Input Low
Voltage(3) Vcc =5.0V -0.5 -- 0.8 V
Vcc =3.0V 2.0
VIH Guaranteed Input High
Voltage(3) Vcc =5.0V 2.2 -- Vcc+0.3 V
IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc -- -- 1 uA
ILO Output Leakage Current
Vcc = Max,CE = VIH or OE = VIH,
VI/O = 0V to Vcc -- -- 1 uA
Vcc =3.0V
VOL Output Low Voltage Vcc = Max, IOL = 2.0mA
Vcc =5.0V -- -- 0.4 V
Vcc =3.0V
VOH Output High Voltage Vcc = Min, IOH = -1.0mA
Vcc =5.0V
2.4 -- -- V
Vcc =3V 70ns 25
ICC(5) Operating Power Supply
Current
CE = VIL,
IDQ = 0mA, F = Fmax(2) Vcc =5V 70ns
-- --
55
mA
Vcc =3.0V 0.5
ICCSB Standby Current-TTL
CE=VIH
IDQ = 0mA Vcc =5.0V
-- --
1.0
mA
Vcc =3.0V 0.3 5
ICCSB1(4) Standby Current-CMOS
CE≧Vcc-0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V Vcc =5.0V
--
1.0 30
uA