A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data * * * * * * * * * * * * BVCEO > 60V Maximum continuous current IC(cont) = 3A Low Saturation Voltage Complementary Type - FZT751 Lead-Free Finish; RoHS compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (approximate) SOT223 Top View Top View Pin-Out Device Symbol Ordering Information (Notes 3 & 4) Product FZT651TA FZT651QTA FZT651TC FZT651QTC Notes: Grade Commercial Automotive Commercial Automotive Marking FZT651 FZT651 FZT651 FZT651 Reel size (inches) 7 7 13 13 Tape width (mm) 12 12 12 12 Quantity per reel 1,000 1,000 4,000 4,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com. 4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified. Marking Information FZT 651 FZT651 Document Number DS33149 Rev. 3 - 2 FZT651 = Product type Marking Code 1 of 7 www.diodes.com April 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT651 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 80 60 5 3 6 Unit V V V A A Value 2 3 62.5 41.7 12.93 -55 to +150 Unit W W C/W C/W C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads (Note 7) Operating and Storage Temperature Range Notes: Symbol (Note 5) (Note 6) (Note 5) (Note 6) PD RJA RJL TJ, TSTG 5. For devices mounted on 25mm X 25mm single sided 2oz weight copper, in still air conditions. 6. For devices mounted on 50mm X 50mm single sided 2oz weight copper, in still air conditions. 7. Thermal resistance from junction to solder-point (at the end of the collector lead) FZT651 Document Number DS33149 Rev. 3 - 2 2 of 7 www.diodes.com April 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT651 10 VCE(sat) IC Collector Current (A) IC Collector Current (A) Thermal Characteristics Limit 1 DC 1s 100ms 100m 10ms T amb=25C 25mm x 25mm 2oz FR4 10m 10 VCE(sat) Limit 1 DC 1s 100ms 10ms 100m 1ms 100s 1 T amb=25C 10m 10 50 60 25mm x 25mm 2oz FR4 50 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Pulse Width (s) T ra n sie n t T h e rm a l Im p e d a n c e Single Pulse T amb=25C 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 2oz FR4 1 100 1m 10m 100m 1 10 100 Pulse Width (s) 1k T amb=25C 40 30 D=0.5 20 Document Number DS33149 Rev. 3 - 2 Single Pulse D=0.2 10 D=0.05 0 100 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) 3.0 50mm x 50mm 2oz FR4 2.5 25mm x 25mm 2oz FR4 2.0 1.5 1.0 0.5 0.0 Pulse Power Dissipation FZT651 50mm x 50mm 2oz FR4 Transient Thermal Impedance Max Power Dissipation (W) T amb=25C Thermal Resistance (C/W) 70 Thermal Resistance (C/W) 10 VCE Collector-Emitter Voltage (V) S a fe O p e ra tin g A re a Safe Operating Area Max Power Dissipation (W) 100s 1 VCE Collector-Emitter Voltage (V) 40 1ms 50mm x 50mm 2oz FR4 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve 3 of 7 www.diodes.com April 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT651 Electrical Characteristics @TA = 25C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min 80 60 5 - - - - - - - 70 100 80 40 Typ - - - - - - 0.12 0.43 0.9 0.8 200 200 170 80 Max - - - 0.1 10 100 0.3 0.6 1.25 1.0 - 300 - - Unit V V V fT 140 175 - MHz ton toff Cobo - - - 45 800 - - 30 Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Emitter Saturation Voltage (Note 8) VCE(sat) Base-Emitter Saturation Voltage (Note 8) Base-Emitter Turn-On Voltage (Note 8) VBE(sat) VBE(on) DC Current Gain (Note 8) Current Gain-Bandwidth Product (Note 8) Switching Times Output Capacitance (Note 8) Notes: hFE A nA V V V - ns pF Test Condition IC = 100A IC = 10mA IE = 100A VCB = 60V VCB = 60V, TA = 125C VEB = 4V IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA IC = 1A, VCE = 2V IC = 50mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V VCE = 5V, IC = 100mA, f = 100MHz IC = 500mA, VCC = 10V, IB1 = IB2 = 50mA VCB = 10V, f = 1MHz 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2% FZT651 Document Number DS33149 Rev. 3 - 2 4 of 7 www.diodes.com April 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT651 Typical Characteristics 1.0 1 Tamb=25C IC/IB=10 0.8 150C VCE(SAT) (V) VCE(SAT) (V) IC/IB=100 100m IC/IB=50 IC/IB=20 10m 0.6 100C 25C 0.4 -55C 0.2 IC/IB=10 1m 10m 100m 1 0.0 10m 10 IC Collector Current (A) 100m 1 10 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1.2 150C IC/IB=10 VCE=2V 300 -55C 1.0 25C VBE(SAT) (V) 100C Gain 200 25C 100 -55C 0.8 0.6 100C 0.4 150C 0 1m 10m 100m 1 10 0.2 1m IC Collector Current (A) 10m 100m 1 10 IC Collector Current (A) VBE(SAT) v IC hFE v IC 1.2 VCE=2V -55C VBE(ON) (V) 1.0 25C 0.8 0.6 100C 0.4 0.2 1m 150C 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC FZT651 Document Number DS33149 Rev. 3 - 2 5 of 7 www.diodes.com April 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT651 Package Outline Dimensions SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout X1 Y1 C1 Y2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 X2 FZT651 Document Number DS33149 Rev. 3 - 2 6 of 7 www.diodes.com April 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT651 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com FZT651 Document Number DS33149 Rev. 3 - 2 7 of 7 www.diodes.com April 2012 (c) Diodes Incorporated