FZT651TA - Diodes [Zetex] - Datasheet.Live

FZT651

Document Number DS33149 Rev. 3 - 2 1 of 7

www.diodes.com April 2012

A Product Line o

Diodes Incorporated

FZT651

60V NPN SILICON PLANAR HIGH PERFORMANCE TRA NSISTOR IN SOT2 23

Features

• BVCEO > 60V

• Maximum continuous current IC(cont) = 3A

• Low Saturation Voltage

• Complementary Type – FZT751

• Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.112 grams (approximate)

Ordering Information (Notes 3 & 4)

Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT651TA Commercial FZT651 7 12 1,000

FZT651QTA Automotive FZT651 7 12 1,000

FZT651TC Commercial FZT651 13 12 4,000

FZT651QTC Automotive FZT651 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicabl e RoHS exemptions applied .

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.

Marking Information

FZT651 = Product type Marking Code

SOT223

Top View Device S

mbol Top View

Pin-Out



Green

FZT

651

FZT651

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FZT651

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 80 V

Collector-Emitter Voltage VCEO 60 V

Emitter-Base Voltage VEBO 5 V

Continuous Collector Current IC 3 A

Peak Pulse Current ICM 6 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 5) PD 2 W

(Note 6) 3 W

Thermal Resistance, Junction to Ambient (Note 5) RθJA 62.5 °C/W

(Note 6) 41.7 °C/W

Thermal Resistance, Junction to Leads (Note 7) RθJL 12.93 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 5. For devices mounted on 25mm X 25mm single sided 2oz weight copper, in still air conditions.

6. For devices mounted on 50mm X 50mm single sided 2oz weight copper, in still air conditions.

7. Thermal resistance from junction to solder-point (at the end of the collector lead)

FZT651

Document Number DS33149 Rev. 3 - 2 3 of 7

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FZT651

Thermal Characteristics

100µ 1m 10m 100m 1 10 100 1k

110

10m

100m

110

10m

100m

Tamb=25°C

25mm x 2 5mm

2oz FR4

VCE(sat)

Limit

100µs

1ms

10ms

100ms

Safe O p erating A rea

IC Col l e ct o r Cu rrent (A)

VCE Colle ctor-Emitter Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0 5 0mm x 5 0mm

2oz FR4

2 5mm x 25mm

2oz FR4

Derating Curve

Temperatu re (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

Tamb=25°C

25mm x 2 5mm

2oz FR4

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s )

100µ 1m 10m 100m 1 10 100 1k

100

25mm x 2 5mm

2oz FR4

5 0mm x 50mm

2oz FR4

Safe Operating Area

Single Pulse

Tamb=25°C

Pulse Po wer Dissipation

Pulse Width (s )

Max Power Dissipation (W)

D=0.1

D=0.05

Single Pulse

D=0.2

D=0.5

Tamb=25°C

50mm x 5 0mm

2oz FR4

Transient Thermal Impedance

Pul se Width (s)

Thermal Resistance (°C/W)

Tamb=25°C

50mm x 5 0mm

2oz FR4 100µs

1ms

10ms

100ms

VCE(sat)

Limit

VCE Colle ctor-Emitter Voltage (V)

IC Collector Current (A)

FZT651

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FZT651

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO 80 − − V IC = 100µA

Collector-Emitter Breakdown Voltage (Note 8) BVCEO 60 − − V IC = 10mA

Emitter-Base Breakdown Voltage BVEBO 5 − − V IE = 100µA

Collector Cut-off Current ICBO − − 0.1 µA VCB = 60V

− − 10 VCB = 60V, TA = 125°C

Emitter Cut-off Current IEBO − − 100 nA

VEB = 4V

Collector-Emitter Saturation Voltage (Note 8) VCE(sat) − 0.12

0.3 V IC = 1A, IB = 100mA

− 0.43 0.6 IC = 3A, IB = 300mA

Base-Emitter Saturation Voltage (Note 8) VBE

(

sat

)

− 0.9 1.25 V

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 8) VBE

(

)

− 0.8 1.0 V

IC = 1A, VCE = 2V

DC Current Gain (Note 8) hFE

70 200 −

−

IC = 50mA, VCE = 2V

100 200 300 IC = 500mA, VCE = 2V

80 170 − IC = 1A, VCE = 2V

40 80 − IC = 2A, VCE = 2V

Current Gain-Bandwidth Product (Note 8) fT 140 175 − MHz VCE = 5V, IC = 100mA,

f = 100MHz

Switching Times ton − 45 − ns IC = 500mA, VCC = 10V,

IB1 = IB2 = 50mA

toff − 800 -

Output Capacitance (Note 8) Cobo − − 30 pF

VCB = 10V, f = 1MHz

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

FZT651

Document Number DS33149 Rev. 3 - 2 5 of 7

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FZT651

Typical Characteristics

1m 10m 100m 1 10

10m

100m

10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1m 10m 100m 1 10

100

200

300

1m 10m 100m 1 10

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1 10

0.2

0.4

0.6

0.8

1.0

1.2

IC/IB=100

VCE(SAT) v IC

Tamb=25°C

IC/IB=50

IC/IB=20

IC/IB=10

VCE(SAT) (V)

IC Co ll e ctor Current ( A)

150°C

VBE(SAT) v IC

IC/IB=10

100°C

25°C

-55°C

VCE(SAT) (V)

IC Co ll e cto r C urren t (A)

150°C

hFE v IC

VCE=2V

-55°C

25°C

100°C

Gain

IC Co l le cto r Current (A)

150°C

25°C

VCE(SAT) v IC

IC/IB=10

100°C

-55°C

VBE(SAT) (V)

IC Co ll e cto r C urren t (A)

150°C

VBE(ON) v IC

VCE=2V

100°C

25°C

-55°C

VBE(ON) (V )

IC Co l le cto r Current (A)

FZT651

Document Number DS33149 Rev. 3 - 2 6 of 7

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FZT651

Package Outline Dimensions

Suggested Pad Layout

SOT223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00

b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

Dimensions Value (in mm)

X1 3.3

X2 1.2

Y1 1.6

Y2 1.6

C1 6.4

C2 2.3

FZT651

Document Number DS33149 Rev. 3 - 2 7 of 7

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FZT651

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.