APTM20DAM04 Boost chopper MOSFET Power Module VDSS = 200V RDSon = 4mW max @ Tj = 25C ID = 372A @ Tc = 25C Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features * * * VBUS 0/VBUS OUT * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits S2 * * * * G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 200 372 278 1488 30 4 1250 100 50 3000 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-6 APTM20DAM04 - Rev 1 May, 2004 Symbol VDSS APTM20DAM04 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 500A Min 200 Typ Tj = 25C Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 10V, ID = 186A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V Tj = 125C 3 Max Unit V 200 1000 4 5 200 mW V nA Max Unit A Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 372A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 212 268 32 Inductive switching @ 125C VGS = 15V VBus = 133V ID = 372A RG = 1.2W Rise Time Typ 28.9 9.32 0.58 560 64 ns 88 116 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2 3396 J 3716 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2 3744 J 3944 Diode ratings and characteristics VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 300A IF = 600A IF = 300A IF = 300A VR = 133V di/dt = 600A/s IF = 300A VR = 133V di/dt = 600A/s Min Tj = 125C Typ 300 1 1.4 0.9 Tj = 25C 60 Tj = 125C 110 Tj = 25C 600 Tj = 125C 2520 Tc = 90C Max Unit A 1.1 V ns nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website - http://www.advancedpower.com 2-6 APTM20DAM04 - Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM20DAM04 Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.22 Unit C/W V 150 125 100 5 3.5 280 C N.m g APT website - http://www.advancedpower.com 3-6 APTM20DAM04 - Rev 1 May, 2004 Package outline APTM20DAM04 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400 Transfert Characteristics 1200 1000 9V 800 8.5V 600 8V 7.5V 400 7V 200 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 1000 800 600 400 TJ=25C 200 TJ=125C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to VGS=10V @ 186A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 400 RDS(on) vs Drain Current ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55C 0 VGS=10V 1 VGS=20V 0.9 0.8 350 300 250 200 150 100 50 0 0 100 200 300 400 ID, Drain Current (A) 500 600 25 50 75 100 125 150 TC, Case Temperature (C) APT website - http://www.advancedpower.com 4-6 APTM20DAM04 - Rev 1 May, 2004 ID, Drain Current (A) 10V ID, Drain Current (A) VGS=15V 1200 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 186A 2.0 1.5 1.0 0.5 0.0 -50 -25 0.6 25 50 75 100 125 150 Maximum Safe Operating Area 1000 limited by RDSon 100s 100 1ms 10 10ms 100ms Single pulse TJ=150C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) TC, Case Temperature (C) C, Capacitance (pF) 0 TJ, Junction Temperature (C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=372A VDS=40V 12 TJ=25C VDS=100V 10 8 VDS=160V 6 4 2 0 0 80 160 240 320 400 480 560 640 APT website - http://www.advancedpower.com Gate Charge (nC) 5-6 APTM20DAM04 - Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20DAM04 APTM20DAM04 Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=1.2 TJ=125C L=100H 60 40 tr and tf (ns) td(on) 120 100 80 tr 60 40 20 0 0 0 100 200 300 400 500 ID, Drain Current (A) 600 0 12 VDS=133V RG=1.2 TJ=125C L=100H Eoff Switching Energy (mJ) 6 100 200 300 400 500 ID, Drain Current (A) 600 Switching Energy vs Gate Resistance Switching Energy vs Current 8 Eon and Eoff (mJ) tf Eon 4 2 0 VDS=133V ID=372A TJ=125C L=100H 10 Eoff 8 6 Eon 4 2 0 100 200 300 400 500 600 0 ID, Drain Current (A) Operating Frequency vs Drain Current 200 150 100 50 0 50 100 150 200 250 ID, Drain Current (A) 7.5 10 12.5 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=133V D=50% RG=1.2 TJ=125C 250 5 Gate Resistance (Ohms) 350 300 2.5 350 1000 TJ=150C 100 TJ=25C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 6-6 APTM20DAM04 - Rev 1 May, 2004 td(on) and td(off) (ns) td(off) 80 20 Frequency (kHz) VDS=133V RG=1.2 TJ=125C L=100H 140 100