APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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OUT
0/VBUSVBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 200 V
Tc = 25°C 372
ID Continuous Drain Current Tc = 80°C 278
IDM Pulsed Drain current 1488
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 4 mW
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
VDSS = 200V
RDSon = 4mW max @ Tj = 25°C
ID = 372A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Boost chopper
MOSFET Power Module
APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V
VGS = 0V,VDS = 200V Tj = 25°C 200
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1000
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 186A 4
mW
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 28.9
Coss Output Capacitance 9.32
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.58
nF
Qg Total gate Charge 560
Qgs Gate – Source Charge 212
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 372A 268
nC
Td(on) Turn-on Delay Time 32
Tr Rise Time 64
Td(off) Turn-off Delay Time 88
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 372A
RG = 1.2W 116
ns
Eon Turn-on Switching Energy u 3396
Eoff Turn-off Switching Energy v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω 3716
µJ
Eon Turn-on Switching Energy u 3744
Eoff Turn-off Switching Energy v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω 3944
µJ
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 90°C 300 A
IF = 300A 1 1.1
IF = 600A 1.4 VF Diode Forward Voltage
IF = 300A Tj = 125°C 0.9
V
Tj = 25°C 60
trr Reverse Recovery Time
IF = 300A
VR = 133V
di/dt = 600A/µs Tj = 125°C 110
ns
Tj = 25°C 600
Qrr Reverse Recovery Charge
IF = 300A
VR = 133V
di/dt = 600A/µs Tj = 125°C 2520 nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.1
RthJC Junction to Case Diode 0.22
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5
N.m
Wt Package Weight 280 g
Package outline
APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
VGS=15V
9V
0
200
400
600
800
1000
1200
1400
0 4 8 12 16 20 24 28
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
200
400
600
800
1000
1200
012345678910
VGS, Gate to Source Voltage (V)
I
D
, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
0 100 200 300 400 500 600
ID, Drain Current (A)
R
DS(on)
Drain to Source ON Resistance
Normalized to
VGS=10V @ 186A
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
TC, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 186A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
100ms
10ms
1ms
100µs
1
10
100
1000
10000
1 10 100 1000
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Single pulse
TJ=150°C
limited by
RDSon
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
14
0 80 160 240 320 400 480 560 640
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=372A
TJ=25°C
APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0 100 200 300 400 500 600
ID, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600
ID, Drain Current (A)
t
r
and t
f
(ns)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
0 100 200 300 400 500 600
ID, Drain Current (A)
E
on
and E
off
(mJ)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
Eoff
2
4
6
8
10
12
02.557.51012.5
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=133V
ID=372A
TJ=125°C
L=100µH
0
50
100
150
200
250
300
350
50 100 150 200 250 300 350
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=1.2Ω
TJ=125°C TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
