ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
1 of 7
www.diodes.com
June 2018
© Diodes Incorporated
ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
200V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) MAX
ID MAX
TA = +25°C
-200V
28Ω @ VGS = -10V
-122mA
Description
This new generation trench MOSFET features a unique structure
combining the benefits of low on-resistance and fast switching,
making it ideal for high-efficiency power management applications.
Applications
Active Clamping of Primary Side MOSFETs in 48V DC-DC
Converters
Features and Benefits
High Voltage
Low On-Resistance
Fast Switching Speed
Low Gate Drive
Low Threshold
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT25
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.016 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
ZXMP2120E5TA
P120
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Equivalent Circuit
Pin Out - Top View
Top View
SOT25
D
S
G
P120 = Product Type Marking Code
SOT25
P120
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
2 of 7
www.diodes.com
June 2018
© Diodes Incorporated
ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-200
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (VGS = -10V; TA = +25°C) (Note 5)
ID
-122
mA
Pulsed Drain Current (Note 6)
IDM
-0.7
A
Pulsed Source Current (Body Diode) (Note 6)
ISM
-0.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
PD
0.75
6
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
167
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-200
-
-
V
VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current
IDSS
-
-
-10
-100
µA
VDS = -200V, VGS = 0V
VDS = -160V, VGS = 0V, TA = +125°C
Gate-Source Leakage
IGSS
-
-
20
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
-1.5
-
-3.5
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance (Note 7)
RDS(ON)
-
-
28
Ω
VGS = -10V, ID = -150mA
Forward Transconductance (Notes 7 & 8)
gfs
50
-
-
ms
VDS = -25V, ID = -150mA
On-State Drain Current (Note 7)
ID(ON)
-300
-
-
mA
VDS = -25V, VGS = -10V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8)
Ciss
-
-
100
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance (Note 8)
Coss
-
-
25
pF
Reverse Transfer Capacitance (Note 8)
Crss
-
-
7
pF
Turn-On Delay Time (Notes 8 & 9)
tD(ON)
-
-
7
ns
VDD = -25V, ID = -150mA
Turn-On Rise Time (Notes 8 & 9)
tR
-
-
15
ns
Turn-Off Delay Time (Notes 8 & 9)
tD(OFF)
-
-
12
ns
Turn-Off Fall Time (Notes 8 & 9)
tF
-
-
15
ns
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
7. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
8. Sample test.
9. Switching characteristics are independent of operating junction temperature.
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
3 of 7
www.diodes.com
June 2018
© Diodes Incorporated
ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
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June 2018
© Diodes Incorporated
ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Capacitance v drain-source voltage
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
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ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Thermal Characteristics
TA = 25°C
TA = 25°C
TA = 25°C
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
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© Diodes Incorporated
ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT25
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT25
SOT25
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
-
-
0.95
H
2.90
3.10
3.00
J
0.013
0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75

-
All Dimensions in mm
Dimensions
SOT25
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
A
M
JL
D
B C
H
KN
X
Z
Y
C1
C2C2
G
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
7 of 7
www.diodes.com
June 2018
© Diodes Incorporated
ZXMP2120E5
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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