© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 800 V
VDGR TJ= 25C to 150C, RGS = 1M 800 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 39 A
IDM TC= 25C, Pulse Width Limited by TJM 100 A
IATC= 25C 22A
EAS TC= 25C 3.4 J
dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns
PDTC= 25C 694 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL 1mA, t = 1s 3000 V~
MdMounting Torque for Base Plate 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/Ib.in
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 800A 800 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 125C 1.5 mA
RDS(on) VGS = 10V, ID = 22A, Note 1 190 m
PolarTM HiperFETTM
Power MOSFET
IXFN44N80P VDSS = 800V
ID25 = 39A
RDS(on)
190m
trr
250ns
DS99503F(8/17)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
AC Motor Control
High Speed Power Switching
Appliccation
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
S
S
D
G
IXFN44N80P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 22A, Note 1 27 43 S
Ciss 18 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 910 pF
Crss 30 pF
td(on) 28 ns
tr 22 ns
td(off) 75 ns
tf 27 ns
Qg(on) 200 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A 67 nC
Qgd 65 nC
RthJC 0.18C/W
RthCS 0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 44 A
ISM Repetitive, Pulse Width Limited by TJM 100 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 0.8 C
IRM 8.0 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
RG = 1 (External)
IF = 22A, -di/dt = 100A/s
VR = 100V, VGS = 0V
© 2017 IXYS CORPORATION, All Rights Reserved
IXFN44N80P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
5
10
15
20
25
30
35
40
45
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10121416
V
DS
- Volts
I
D
- Amperes
5V
6V
V
GS
= 10V
Fig. 4. R
DS(on)
Normalized to I
D
= 22A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 44A
I
D
= 22A
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 102030405060708090100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
0
5
10
15
20
25
30
35
40
45
50
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFN44N80P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXF_44N80P (9S-788) 6-8-06-A
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125oC
25oC
- 40oC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 1020304050607080
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40oC
125oC
25oC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125oC
T
J
= 25oC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 400V
I
D
= 22A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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