HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. TO-220AB Specification Features * VCEO(sus)=400V * Reverse Bias SOA with Inductive Loads @TC=100C * Inductive Switching Matrix 3 to 12 Amp., 25 and 100C...tc@8A, 100C is 120ns(Typ.) * 700V Blocking Capability * SOA and Switching Applications Information Absolute Maximum Ratings Characteristic Symbol Max. Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vd Collector Current-Continuous IC 12 Adc Collector Current-Peak* ICM 24 Adc Base Current-Continuous IB 6 Adc Base Current-Peak* IBM 12 Adc Emitter Current-Continuous IE 18 Adc Emitter Current-Peak IEM 36 Adc 2 Watts 16 mW/C 100 Watts 800 mW/C -65 to +150 C Total Power Dissipation@TA=25C Derate above 25C Total Power Dissipation@TC=25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg *Pulse Test: Pulse Width 380us, Duty Cycle2% Thermal Characteristics Characteristic Symbol Max. Unit Thermal Resistance, Junction to Case RJC 1.25 C/W Thermal Resistance, Junction to Ambient RJA 62.5 C/W TL 275 C Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds HMJE13009A HSMC Product Specification HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 2/6 MICROELECTRONICS CORP. Electrical Characteristics (TA=25C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit VCEO(sus) 400 - - Vdc Collector Cutoff Current (VCEV=Rated Value, VBE(off)=1.5Vdc (VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100C) ICEV - - 1 5 mAdc Emitter Cutoff Current (VEB=9Vdc, IC=0) IEBO - - 1 mAdc * Off Characteristics Collector-Emitter Sustaining Voltage (IC=10mA, IB=0) * Second Breakdown Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased See Figure 1 See Figure 2 Is/b * On Characteristics DC Current Gain (IC=0.5Adc, VCE=5Vdc) DC Current Gain (IC=5Adc, VCE=5Vdc) DC Current Gain (IC=8Adc, VCE=5Vdc) DC Current Gain (IC=12Adc, VCE=5Vdc) *hFE1 *hFE2 *hFE3 *hFE4 15 13 8 5 - 22 - Collector-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=12Adc, IB=3Adc) (IC=8Adc, IB=1.6Adc, TC=100C) *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 - - 1 1.5 3 2 Base-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=8Adc, IB=1.6Adc, TC=100C) *VBE(sat)1 *VBE(sat)2 *VBE(sat)3 - - 1.3 1.6 1.5 fT 4 - - MHz Cob - 180 - pF td - 0.06 0.1 uS tr - 0.45 1 uS ts - 1.3 3 uS tf - 0.2 0.7 uS tsv - 0.92 2.3 uS tc - 0.12 0.7 uS Vdc Vdc * Dynamic Characteristics Current Gain Bandwidth Product (IC=500mAdc, VCE=10Vdc, f=1MHz) Output Capacitance (VCB=10Vdc, IE=0, f=0.1MHz) * Switching Characteristics Delay Time Rise Time Storage Time (VCC=125Vdc, IC=8A) IB1=IB2=1.6A, tp=25uS Duty Cycle1% Fall Time * Inductive Load, Clamped Voltage Storage Time Crossover Time (IC=8Adc, Vclamp=300Vdc) (IB1=1.6Adc,VBE(off)=5Vdc, TC=100C) *Pulse Test: Pulse Width 380us, Duty Cycle2% HMJE13009A HSMC Product Specification HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 3/6 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 10 100 VCE=5V VBE(sat) @ IC=5IB o 75 C o Saturation Voltage (V) 125 C o hFE 25 C 10 1 0.001 0.01 0.1 1 10 100 o o 25 C 1 75 C o 125 C 0.1 0.001 0.01 Collector Current (A) Saturation Voltage & Collector Current 1 10 100 Saturation Voltage & Collector Current 10 10 VCE(sat) @ IC=4IB VCE(sat) @ IC=5IB Saturation Voltage (V) Saturation Voltage (V)... 0.1 Collector Current (A) 1 o 125 C o 75 C 0.1 1 o 75 C o 125 C 0.1 o 25 C o 25 C 0.01 0.001 0.01 0.1 1 10 100 0.01 0.001 Collector Current (A) 0.01 0.1 1 10 100 Collector Current (A) Switching Time & Collector Current Capacitance & Reverse-Biased Voltage 10 1000 Switching Time (us)... Capacitance (pF) VC=125V, IC=5IB1 , IB1=-IB2 100 10 Tstg 1 Ton Tf 0.1 1 0.1 1 10 Reverse-Biased Voltage (V) HMJE13009A 100 0.1 1 10 100 Collector Current (A) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 4/6 Safe Ooperating Area Collector Current-Ic (A)... 100 10 100ms 1s 1 1ms 0.1 1 10 100 1000 Forward Voltage-VCB (V) HMJE13009A HSMC Product Specification HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13009A C D Date Code H M I K 3 G N 2 1 Tab O P Control Code Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J L Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMJE13009A HSMC Product Specification HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 6/6 MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C 5 C 5sec 1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HMJE13009A o o o o 260 C +0/-5 C 5sec 1sec HSMC Product Specification