HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2005. 08.15
Page No. : 1/6
HMJE13009A HSMC Produc t Specification
HMJE13009A
12 AMPERE NPN SILICON POW ER TRANSISTOR
Description
The HMJE13009A is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
Specification Features
• VCEO(sus)=400V
• Reverse Bias SOA with Inductive Loads @TC=100°C
• Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)
• 700V Blocking Capability
• SOA and Switching Applications Information
Absolute Maximum Ratings
Characteristic Symbol Max. Unit
Collector-Emitter Voltage VCEO(sus) 400 Vdc
Collector-Emitter Voltage VCEV 700 Vdc
Emitter-Base Voltage VEBO 9Vd
Collector Current-Continuous IC12 Adc
Collector Current-Peak* ICM 24 Adc
Base Current-Continuous IB6Adc
Base Current-Peak* IBM 12 Adc
Emitter Current-Continuous IE18 Adc
Emitter Current-Pea k IEM 36 Adc
Total Powe r Dissipation@TA=25°C
Derate above 25°CPD2
16 Watts
mW/°C
Total Powe r Dissipation@TC=25°C
Derate above 25°CPD100
800 Watts
mW/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance, Junction to Case RθJC 1.25 °C/W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Maximum Lead Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds TL275 °C
TO-220AB
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2005. 08.15
Page No. : 2/6
HMJE13009A HSMC Produc t Specification
Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
• Off Characteristics
Collector-Emitter Sustaining Voltage
(IC=10mA, IB=0) VCEO(sus) 400 - - Vdc
Collector Cutoff Current
(VCEV=Rated Va lue, VBE(off)=1.5Vdc
(VCEV=Rated Va lue, VBE(off)=1.5Vdc, TC=100°C) ICEV -
--
-1
5mAdc
Emitter Cutoff Current (VEB=9Vdc, IC=0) IEBO --1mAdc
• Second Breakdown
Second Breakdown Collector Current with base forward biased
Clamped Induc ti ve SOA with Base Rever s e Biase d Is/b See Figure 1
See Figure 2
• On Characteristics
DC Current Gain (IC=0.5Adc, VCE=5Vdc)
DC Current Gain (IC=5Adc, VCE=5Vdc)
DC Current Gain (IC=8Adc, VCE=5Vdc)
DC Current Gain (IC=12Adc, VCE=5Vdc)
*hFE1
*hFE2
*hFE3
*hFE4
15
13
8
5
-
-
-
-
-
22
-
-
Collector-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc)
(IC=8Adc, IB=1.6Adc)
(IC=12Adc, IB=3Adc)
(IC=8Adc, IB=1.6Adc, TC=100°C)
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
-
-
-
-
-
-
-
-
1
1.5
3
2
Vdc
Base-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc)
(IC=8Adc, IB=1.6Adc)
(IC=8Adc, IB=1.6Adc, TC=100°C)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
-
-
-
-
-
-
1.3
1.6
1.5
Vdc
• Dynamic Characteristics
Current Gain Ban d width Prod uc t
(IC=500mAdc, VCE=10Vdc, f=1MHz) fT4--MHz
Output Capacitance
(VCB=10Vdc, IE=0, f=0.1MHz) Cob - 180 - pF
• Switching Characteristics
Delay Ti me td - 0.06 0.1 uS
Rise Ti me tr - 0.45 1 uS
Storage Ti me ts - 1.3 3 uS
Fall Time
(VCC=125Vdc, IC=8A)
IB1=IB2=1.6A, tp=25uS
Duty Cycle≤1% tf - 0.2 0.7 uS
• Inductive Load, Clamped
Voltage Storage Time tsv - 0.92 2.3 uS
Crossov e r Ti me (IC=8Adc, Vclamp=300Vdc)
(IB1=1.6Adc,VBE(off)=5Vdc, TC=100°C) tc - 0.12 0.7 uS
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2005. 08.15
Page No. : 3/6
HMJE13009A HSMC Produc t Specification
Characteristics Curve
Capacitance & R everse-Biased Vol ta ge
1
10
100
1000
0.1 1 10 100
R ever se- Biased Vol tage (V)
Capacitanc e ( pF)
Curr ent Gain & Col l ect or Curren t
1
10
100
0.001 0.01 0.1 1 10 100
Coll e c tor Cur r e nt (A)
hFE
V
CE
=5V
125
o
C75
o
C
25
o
C
Saturation Voltage & Collector Current
0.1
1
10
0.001 0.01 0.1 1 10 100
Collector Cu rr ent (A)
Saturation Voltage ( V)
125
o
C
75
o
C
25
o
C
V
BE(sat)
@ I
C
=5I
B
Saturation V ol ta ge & C ollect or Curren t
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100
Coll e c tor Cur r e nt (A)
Satur a t ion Voltag e ( V)
V
CE(sat)
@ I
C
=5I
B
25
o
C
125
o
C
75
o
C
Saturati on Volt age & Collect or Current
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100
Coll e c tor Cur r e nt (A)
Satur a t ion Voltag e ( V)...
V
CE(sat)
@ I
C
=4I
B
75
o
C
125
o
C
25
o
C
Sw it ching Time & Collector Curr ent
0.1
1
10
0.1 1 10 100
Coll e c tor Cur r e nt (A)
Swit c h in g Time ( u s ) ...
V
C
=125V, I
C
=5I
B1
, I
B1
=-I
B2
Ton
Tstg
Tf
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2005. 08.15
Page No. : 4/6
HMJE13009A HSMC Produc t Specification
Safe Ooperat ing Area
0.1
1
10
100
1 10 100 1000
Forwa r d Vol tage-V
CB
(V)
Colle c tor Cu rrent-Ic ( A)...
1ms
100ms
1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2005. 08.15
Page No. : 5/6
HMJE13009A HSMC Produc t Specification
TO-220AB Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al P ark Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
Tab
F
J
L
Marking:
Control Code
Date Code
H
13
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
00 JE
9
MA
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I-*3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N-*2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2005. 08.15
Page No. : 6/6
HMJE13009A HSMC Produc t Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Hum idit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained abov e :
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
