Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB425D
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low power rectification
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planer Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C) Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit
VF1- - 0.55 V IF=100mA
VF2- - 0.34 V IF=10mA
Reverse current IR1--30μAV
R=10V
Capacitance between terminals Ct1 - 6 - pF VR=10V , f=1MHz
Parameter
Forward voltage
Conditions
Storage temperature 40 to 125
(*1) Rating of per diode：Io/2
Forward current surge peak (60Hz・1cyc) (*1) 1
Junction temperature 125
Reverse voltage (DC) 40
Average rectified forward current (*1) 100
Parameter Limits
Reverse voltage (repetitive peak) 40
SMD3
1.0MIN.
0.8MIN.
2.4
0.95
1.9
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
1.35±0.1
3.2±0.1
φ1.05MIN
3.2±0.1
0.3±0.1
5.5±0.2
0～0.5
ROHM : SMD3
JEITA : SC-59
week code
JEDEC :S0T-346
0.4
＋0.1
－0.06
2.9±0.2
2.8±0.2
1.9±0.2
1.6
＋0.2
－0.1
0.95 0.95
＋0.1
－0.0 5
各リードとも
同寸法
0～0.1
0.15
1.1±0.2
0. 01
0.8±0.1
(2) (1)
(3)
0.3～0.6
Each lead has same dimension
1/3 2011.04 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB425D
0
5
10
15
20
25
30
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
VF DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
0.01
0.1
1
10
100
0 100 200 300 400 500 600
0.01
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30 35
1
10
100
0 102030
f=1MHz
420
430
440
450
460
470
AVE:439.5mV
Ta=25℃
IF=100mA
n=30pcs
260
270
280
290
300
310
AVE:281.5mV
Ta=25℃
IF=10mA
n=30pcs
0
5
10
15
20
25
30
Ta=25℃
VR=10V
n=10pcs
AVE:2.548uA
0
5
10
15
20
AVE:5.50A
8.3ms
Ifsm 1cyc
AVE:6.20ns
0
5
10
15
0.1 1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
0.1 1 10 100
t
Ifsm
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
0
1
2
3
4
5
6
7
8
9
10
AVE:6.09pF
Ta=25℃
f=1MHz
VR=10V
n=10pcs
D2
D1
2/3 2011.04 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB425D
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
00.10.2
Per chip
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0 102030
Per chip
0
0.05
0.1
0.15
0.2
0.25
0.3
0 25 50 75 100 125
Per chip
0
0.05
0.1
0.15
0.2
0.25
0.3
0 25 50 75 100 125
Per chip
DC
D=1/2
Sin(θ＝180)
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
3/3 2011.04 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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