Low Noise GaAs MMIC Amplifier
1.2 - 1.75 GHz
MAAM12000-A1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V4
1
RoHS
Compliant
Features
•Low Noise Figure: 1.35 dB
•High Gain: 26 dB
•No External Components Required
•DC Decoupled RF Input and Output
•Lead-Free 8-Lead Ceramic Package
•RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM’s MAAM12000-A1 is a wide band, low
noise, MMIC amplifier housed in a lead-free, small
8-lead ceramic package. It includes two integrated
gain stages and employs series inductive feedback
to obtain excellent noise figure and a good, 50-ohm,
input and output impedance match over the 1.2 to
1.75 GHz band. The MAAM12000-A1 is fully
monolithic, requires no external components and is
provided in a low-cost, user-friendly, microwave
package.
The MAAM12000-A1 is ideally suited to receivers in
GPS and DGPS applications and operates over both
the L1 and L2 frequency bands. Because of its wide
bandwidth, the MAAM12000-A1 can also be used as
a driver, buffer or IF amplifier in numerous
commercial and government system applications
that require high gain, excellent linearity and low
power consumption.
The MAAM12000-A1 is manufactured in-house
using a reliable, 0.5 micron, GaAs MESFET process.
This product is 100% RF tested to ensure
compliance to performance specifications.
Ordering Information
Part Number Package
MAAM12000-A1 8-Lead Ceramic
MAAM12000-A1G Gull Wing
Pin Configuration1
Pin No. Function Pin No. Function
1 Ground 5 VDD
2 RF Input 6 Ground
3 Ground 7 RF Output
4 VGG 8 Ground
Schematic
RF IN
GND
GND
VGG
GND
GND
VDD
RF OU
T
Typical Biasing Configuration
and Functional Block Diagram
Absolute Maximum Ratings 2,3
Parameter Absolute Maximum
VDD +7 V
VGG -10 V
Input Power +20 dBm
Current 150 mA
Channel Temperature +150°C
Operating Temperature4 -55°C to +100°C
Storage Temperature -65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
4. Typical thermal resistance (θjc) = +110°C/W.
1. The package bottom must be connected to RF and DC
ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
Low Noise GaAs MMIC Amplifier
1.2 - 1.75 GHz
MAAM12000-A1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V4
2
RoHS
Compliant
Electrical Specifications: TA = 25°C, VDD = +5 V, VGG = -5 V, Z0 = 50 Ω
Parameter Test Conditions Units Min. Typ. Max.
Gain 1.20 - 1.75 GHz, PIN = -30 dBm dB 23 26 —
Noise Figure 1.20 - 1.75 GHz, PIN = -30 dBm dB — 1.35 1.8
Input VSWR 1.20 - 1.75 GHz, PIN = -30 dBm Ratio — 1.4:1 —
Output VSWR 1.20 - 1.75 GHz, PIN = -30 dBm Ratio — 1.4:1 —
Output 1 dB Compression 1.20 - 1.75 GHz dBm — +14 —
Input IP3 1.20 - 1.75 GHz, PIN = -30 dBm dBm — -2 —
Reverse Isolation 1.20 - 1.75 GHz, PIN = -30 dBm dB — 35 —
Bias Current — mA — 80 110
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
Operating The MAAM12000-A1
Nominal bias is obtained by connecting -5 volts to
pin 4 (VGG) followed by connecting +5 volts to pin 5
(VDD). Note sequence.
Power down in reverse sequence.
Lead-Free CR-3 (MAAM12000-A1)†
Lead-Free CR-10 (MAAM12000-A1G)†
† Reference Application Note M538 for lead-free solder reflow
recommendations.
Low Noise GaAs MMIC Amplifier
1.2 - 1.75 GHz
MAAM12000-A1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V4
3
RoHS
Compliant
VSWR
Reverse Isolation
Noise Figure
Typical Performance Curves
Gain
0
5
10
15
20
25
30
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Frequency (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0.81.01.21.41.61.82.02.2
Frequency (GHz)
0.0
0.5
1.0
1.5
2.0
2.5
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Frequency (GHz)
0
4
8
12
16
20
24
0.81.01.21.41.61.82.02.2
Frequency (GHz)
Output Power
1.0
1.5
2.0
2.5
3.0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Input
Output
Frequency (GHz)
