96 DE 7964142 of05059 4 ue ten To - N-CHANNEL ~ IRF240/241/242/243 POWER MOSFETS 964142 SAMSUNG SEMICONDUCTOR ING 980. 05099 De T3913. FEATURES Low Rpsjon) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance , Extended safe operating area Improved high temperature reliability TO-3 package (Standard) TO-3 SS eeeuees#e800 00 PRODUCT SUMMARY - Part Number Vos Ros(on) lb OD IRF240 200V 0.189 18A a IRF241 150V 0.182 18A LF IRF242 2oov | 0220 | 416A a { IRF243 150V 0.220 16A . MAXIMUM RATINGS Characteristic Symbo! (RF240 IRF241 IRF242 IRF243 Unit Drain-Source Voltage (1) Voss 200 150 200 150 Vde Drain-Gate Voltage (Ras=1.0MM) (1) Voer 200 150 200 150 Vde \ " Gate-Source Voltage . Ves +20 Vde Continuous Drain Current To=25C Ip 18 18 16 i6 Adc Continuous Drain Current Te=100C Ip 1 11 10 10 Adc Drain CurrentPulsed (3) lom 72 72 64 64 Adc Gate CurrentPulsed lam +1.5 Adc Total Power Dissipation @ Tc=25C Pp 125 Watts Derate above 25C 1.0 Wie riumaticn Temperature Range Ty, Tsig 55 to 150 C purposes, 1/8" from ease for 8 seconds TL 300 C Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR 98 -n2%964142 SAMSUNG SEMICONDUCTOR INC. 98D 05100 DT-34-13_ - Wo DEG 7364142 oo05100 7 i pa ed ! N-CHANNEL ~~": ELECTRICAL CHARACTERISTICS. (To=25C unless otherwise specified). Characteristic Symbol] Type |Min| Typ | Max |Units| Test Conditions : IRF240 . IRF242 200) - V |Ves=0V . Drain-Source Breakdown BVpss Voltage -. IRF241 } IRF243 150; - Vi iip=250pA Gate Threshold Voltage Vesith | ALL | 2.0) 4.0 V |Vps=Ves, lp=250uA r Gate-Source Leakage Forward! lass ALL | |] 100 | nA |Ves=20V I Gate-Source Leakage Reverse} Iass | ALL | | |-100! nA |Ves=-20V Zero Gate Voltage aan loss ALL | | 250] pA |Vps=Max. Rating, Vas=OV Drain Current | | 1000) pA |Vos=Max. Ratingx0.8, Vas=OV, Tco= 125C IRF240) . , A On-State Drain-Source IRF241 ~ _ Current (2) toon) IRF242 Vos>lo(on)XRosion) max, Ves= 10V inr2qa| '&); | | A IRF240) _lo.13lo.18| 9 Static Drain-Source On-State IRF241 _ _ Rosjon) Ves=10V, lpb=10A Resistance (2) IRF242 . IRF243| ~ 0.20; 0.22) 2 Forward Transconductance (2)} gis ALL {6.0} 9.5] 8 |Vps>lpjon) XRoston) max. [p=10A - input Capacitance Ciss ALL | {1200]1600; pF Output Capacitance Coss |- ALL | | 360] 750| pF |Vas=OV, Vog=25V, f=1.0MHz Reverse Transfer Capacitance} Cysgs ALL | | 1380] 300] pF Turn-On Delay Time taiony) | ALL |} | | 30 | ns Rise Time tr AL |j] 60 | ng |o0=0.58Vpss, p= 10A, Zo=4.72 (MOSFET switching times are essentially -[Turn-Off Delay Time tao | ALL | | | 80 | ns independent of operating temperature.) v - Fall Time tt ALL | - 60 ns Total Gate Charge (Gate-Source Plus Gate-Drain) Qy ALL | | 44 60 | nc Vas=10V, ilp=22A, Vos=0.8 Max. Rating ; {Gate charge is essentially independent of Gate-Source Charge Qos ALL | 9 | nc operating temperature.) Gate-Drain (Miller) Charge | Qgq ALL |} | 35 | | nc THERMAL RESISTANCE Junction-to-Case Rinuc | ALL | } | 1.0 | K/W Case-to-Sink Rincs | ALL | | 0.1 | K/W {Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL | -] 30 | K/W [Free Air Operation Notes: (1) Ty=25C to 150C _{2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature G58 samsuna SEMICONDUCTOR, 99 __| -_7eeai42 s 5 SEMICONDUCTOR INC. 98D. 05101. OD TS419-. qa De Wvseuay2 ooosio1 9 ff ee CHANNEL SO IRF240/241/242/243 POWER MOSFETS SAMSUN - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic - Symbol/ Type |Min| Typ | Max jUnits Test Conditions me iRF240) | | agp | a - Continuous Source Current Is IRF241 Body Diode - _ | (Body Bide) . eea2| | | 16 | A |Modilied MOSFET symbol D showing the integral @ 4 IRF240) | _ | zo | [reverse P-N junction rectifier 8 i Pulse Source Current sm IRF241 . . : -|(Body Diode) (3) _ |tRF242|_-) _ | 64 | a . -IRF243 . Iheoas| | | 2:0 | V |Tc=25C, Is=18A, Vas=OV . Diode Forward Voltage (2) Vsp . IRF242, | _ | 1.9] v_ |te=28C, Is=16A, Vas=0V . IRF243 . c= 1 ig= os= . Reverse Recovery Time tr ALL | ; 650 - ns |{Ty=150C, tf=18A, dig/dt=100A/ps Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300yps, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature Ip, ORAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) T= 128C T= 25C T, +o : 0 2 4 6 8 10 12 14 \ + Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Veg, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics py > (ip, DRAIN CURRENT (AMPERES) Ib, DRAIN CURRENT (AMPERES) - 0 1 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) . Typical Saturation Characteristics Maximum Safe Operating Area. { GEE sawsunc SEMICONDUCTOR 100 7964142 SAMSUNG SEMICONDUCTOR. ING. P9Ub4R42 Oon540e o IRF240/241/242/243 ae 980. 05102 DT: 34-13 "N-CHANNEL * ; POWER MOSFETS THERMAL [MPEDANCE (PER UNIT) e 2nactRinsc, NORMALIZED EFFECTIVE, TRANSIENT 2 > 2 = {. SQUARE WAVE PULSE DURATION (SECONDS) to-Case Vs. Pulse Duration Maxi Effective tr it Thermal i nn 1. Outy Factor, Dat Per Unt Baso=Pavc= 10 Dag C/W TaTo Peat Zeuc (t] 2 gis, TRANSCONDUCTACE (SIMENS) lpn, REVERSE DRAIN CURRENT (AMPERES) 0 b DRAIN CURRENT (AMPERES) Typical Transconductance Vs. Drain Current 1.05 Rosjon DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE . (NORMALIZED) a 40 80 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature -40 oO 4 0.8 1.2 1 20 4 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage 160 40 80 120 Ty, JUNCTION TEMPERATURE (C) Normalized Or-Resistance Vs. Temperature ese SAMSUNG SEMICONDUCTOR 101 + 7964142 SAMSUNG SEMICONDUCTOR IRF240/241/242/243 C, CAPACITANCE (pF) 4co oO - Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Rosjon) DRAIN-TO-SOURCE ON RESISTANCE (OHMS) fp, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current 8 a oo Pp, POWER DISSIPATION (WATTS) rs 0 20 40 60 80 120 140 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve PAb4L4e OOC5103 2 La Et -N-CHANNEL Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Vollage _,.980_05103 Dd T-BAA3 | POWER MOSFETS vostilye IRF 240.2, Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 40 80 100 Q,, TOTAL GATE CHARGE (nC) Ip, DRAIN CURRENT (AMPERES) 75 Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature 160 [ cee SAMSUNG SEMICONDUCTOR 102