CPH6314 CPH6314 Ordering number : ENN8236 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * Low ON-resistance. High-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --30 V 20 V --4 A ID Drain Current (Pulse) IDP PW10s, duty cycle1% --16 A Allowable Power Dissipation PD Mounted on a ceramic board (1200mm20.8mm) 1.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) Ratings min typ ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 --30 VDS=--10V, ID=--1mA --1.2 V --1 A 10 A --2.6 yfs RDS(on)1 VDS=--10V, ID=--2A ID=--2A, VGS=--10V 53 69 m Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--1A, VGS=--4.5V 92 129 m ID=--1A, VGS=--4V 105 147 m Input Capacitance Ciss VDS=--10V, f=1MHz 510 Output Capacitance Coss VDS=--10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns tr See specified Test Circuit. 20 ns td(off) See specified Test Circuit. 40 ns tf See specified Test Circuit. 32 ns Turn-OFF Delay Time Fall Time Marking : JQ (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 3.6 V Forward Transfer Admittance Rise Time 2.5 Unit max S pF Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: CPH6314/D CPH6314 Continued from preceding page. Parameter Symbol Total Gate Charge Qg Gate-to-Source Charge Qgs Ratings Conditions min Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--10V, ID=--4A VDS=--10V, VGS=--10V, ID=--4A VDS=--10V, VGS=--10V, ID=--4A Diode Forward Voltage VSD IS=--4A, VGS=0 0.2 0.6 2.8 0.2 0.9 0.7 G CPH6314 P.G 50 S SANYO : CPH6 ID -- VDS ID -- VGS --6 VDS= --10V V 3.5 -- --2.5 --3.0V --2.0 --1.5 --1.0 --4 Ta=75 C --25C Drain Current, ID -- A --5 --3 --2 25C --10. 0V --8.0 --6.0 V V --4. --4. 0V 5V Drain Current, ID -- A VOUT PW=10s D.C.1% 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 2.9 --3.0 ID= --2A RL=7.5 D 0.95 --3.5 V VDD= --15V VIN 0.05 3 --4.0 nC --1.2 0V --10V 4 1.6 2 nC nC 1.7 VIN 0.15 0.6 1 11 2.4 Switching Time Test Circuit 0.4 5 Unit max --0.86 Package Dimensions unit : mm 2151B 6 typ --1 VGS= --2.5V --0.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 --0.5 IT04492 --4.5 --5.0 IT04493 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 250 200 ID= --1A --2A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V --14 --16 150 V --4.0 S= VG , --1A V I D= --4.5 S= VG , --1A I D= .0V = --10 , V GS A 2 -I D= 100 50 0 --60 IT04494 Rev.0 I Page 2 of 4 I www.onsemi.com --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT04495 CPH6314 3 5C 2 --2 = Ta 1.0 C C 5 75 2 7 5 3 0.1 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.1 7 5 3 2 0 5 7 --10 IT04496 --0.4 --0.6 --0.8 --1.0 --1.2 IT04497 Ciss, Coss, Crss -- VDS 1000 f=1MHz VDD= --15V VGS= --10V 2 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 7 Ciss 100 td (off) 5 3 tf 2 td(on) 10 tr 7 5 Ciss, Coss, Crss -- pF 7 5 3 2 Coss 100 Crss 3 2 7 1.0 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 0 3 2 --10 7 5 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC 1.6 1.5 on ac bo 3 2 00 --0.01 --0.01 2 3 IT04499 m2 0 .8m m ) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 1m s s ms 10 10 0m s op er ati on Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) m 0 --20 IT04498 Operation in this area is limited by RDS(on). --0.1 7 5 12 0.5 --18 <10s --1.0 7 5 ar d( --16 10 DC am ic --14 ID= --4A er 1.0 --12 0 nt ed --10 ASO M ou --8 IDP= --16A PD -- Ta 2.0 --6 3 2 3 2 --1 0 --4 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --4A --9 --2 IT04500 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V --1.0 7 5 3 2 --0.01 7 5 3 2 --0.001 2 Drain Current, ID -- A Allowable Power Dissipation, PD -- W --10 7 5 3 2 IF -- VSD VGS=0 25C --25 C 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 7--0.01 Switching Time, SW Time -- ns 2 VDS= --10V Ta= 75C yfs -- ID 2 160 IT04502 Rev.0 I Page 3 of 4 I www.onsemi.com 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT04501 CPH6314 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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