CPH6314
Rev.0 I Page 1 of 4 I www.onsemi.com
Ordering number : ENN8236
CPH6314 P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•High-speed switching.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--4 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --16 A
Allowable Power Dissipation PDMounted on a ceramic board (1200mm2✕0.8mm) 1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--2A 2.5 3.6 S
RDS(on)1 ID=--2A, VGS=--10V 53 69 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--1A, VGS=--4.5V 92 129 mΩ
RDS(on)3 ID=--1A, VGS=--4V 105 147 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 510 pF
Output Capacitance Coss VDS=--10V, f=1MHz 115 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns
Rise Time trSee specified Test Circuit. 20 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns
Fall T ime tfSee specified Test Circuit. 32 ns
Marking : JQ Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
CPH6314/D
CPH6314
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 11 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 1.7 nC
Diode Forward Voltage VSD IS=--4A, VGS=0 --0.86 --1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm
2151B
2.9
0.95
0.05
13
465
2
0.2
0.7 0.9 2.8
1.6
0.6 0.6
0.2
0.4 0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --2A
RL=7.5Ω
VDD= --15V
VOUT
CPH6314
VIN
0V
--10V
VIN
--60 --40 --20 0 20 406080100 120 140 160
0--2--4--6 --8 --10 --12 --14 --16
50
100
150
200
250
300
0
RDS(on) -- VGS
IT04494
0
--0.5
--1.0
--2.0
--2.5
--3.0
--4.0
--3.5
--1.5
0--0.2 --0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
IT04492
0--1.0--0.5 --1.5 --2.0 --2.5 --3.0 --3.5 --4.5--4.0 --5.0
0
--1
--2
--3
--4
--5
--6
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
--25°C
IT04493
RDS(on) -- Ta
IT04495
0
50
100
200
150
--10.0V
--3.5V
VGS= --2.5V
--3.0V
--4.5V
--4.0V
--8.0V
--6.0V
25°C
Ta=75°C
ID= --1A --2A
ID= --1A, VGS= --4.0V
ID= --1A, VGS= --4.5V
ID= --2A, VGS= --10.0V
VDS= --10V
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
CPH6314
Rev.0 I Page 3 of 4 I www.onsemi.com
IT04496
Forward T ransfer Admittance, yfs -- S
y
fs -- ID
IT04497
0--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Forward Current, IF -- A
IF -- VSD
7
0.1
1.0
7
5
3
2
10
7
5
3
2
2
--0.1 --1.0
23 57
--0.01 23 577--10
23 57
75
°
C
Ta= - -25°C
VDS= --10V
--0.001
2
3
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
--0.01
7
5
3
2
7
5
2
VGS=0
0
0
--2
--1
--3
--4
--5
--6
--7
--8
12106824
--9
--10
VGS -- Qg
VDS= --10V
ID= --4A
IT04499
--0.1
7--1.0
23 57 23 57
--10 2
SW Time -- ID
VDD= --15V
VGS= --10V
td(on)
td(off)
tr
tf
IT04500
0--2--4--6
1000
7
5
3
2
100
7
5--8 --20--10 --12 --14 --16 --18
Ciss, Coss, Crss -- VDS
Ciss
Coss
Crss
IT04498
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
IT04502
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT04501
0020406080100 120 140 160
0.5
1.0
1.5
1.6
2.0
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
2
3
100
2
3
10
1.0
2
7
5
7
3
5
Mounted on a ceramic board (1200mm
2
✕0.8mm)
100ms
DC operation
10ms
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm
2
✕0.8mm)
IDP= --16A
ID= --4A
Operation in this
area is limited by RDS(on).
<10µs
1ms
100µs
--0.01 --0.1 --1.0 --10
23 57 23 57 2 3 57 2 3 5
--10
--1.0
--0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
Ta=75
°
C
25
°
C
--25
°
C
f=1MHz
25°C
CPH6314
Rev.0 I Page 4 of 4 I www.onsemi.com CPH6314/D
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