TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR(NPN) [S| TO-126 | ! | ! T 1.EMITTER : | : 2.COLLECTOR HF {I 3.BASE FEATURES "Power dissipation : 1.25 W (Tamb=25C) Pom et Se ea fea ns V(BR)cso: BD233 : 45V BD235 : 60V BD237: 100V Operating and storage junction temperature range Tstg: -65C to + 150C Ts: 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) | Collector-base breakdown voltage : BD235 V(BR)CBO Ic= 1001 A, le=0 60 V BD237 100 BD233 45 Collector-emitter breakdown voltage BD235 | V(BR)CEO Ic= 10 mA, Is=0 60 V [2 - -BD237 80 Emitter-base breakdown voltage VIERIEBO le= 100 u A, Ic=0 5 V BD233 Ves= 45 V, le=0 Collector cut-off current BD235 IcBo Vcs= 60 V, le=0 100 LA ; BD237 Vcp= 100 V, le=0 Emitter cut-off current leo | Ves= 5 V, Ic=0 1 mA : hFeE(1) Vcs= 2 V, Ic= 150 MA 40 DC current gain hFe(2) Vep=2V,Ilc= 1A 25 | Collector-emitter saturation voltage VCEsat Ic= 1A, ls= 100 mA 0.6 V Transition fiequency VceE=10V, Ic=250mA fT 3 MHz f = 10MHz hee, DC CURRENT GAIN Typical Characteristics 1000 app ; 100 |}- 10 = iin : : 1 : FE i 0.01 0.1 { 40 I,[A], COLLECTOR CURRENT DC current Gain 10 Ic MAX. (Pulsed) wafer enc eee BES le MAX. (Continuous) AN Ic[A], COLLECTOR CURRENT _ BD233 BD235 0.1 BD237~ 1 10 Vce[V], COLLECTOR-EMITTER VOLTAGE Safe Operating Area 100 Veesat Veesat VI, SATURATION VOLTAGE P.[W], POWER DISSIPATION BD233/235/237 c= 10 |e ' Vecsat a 0.04 0.1 10 Ic[A], COLLECTOR CURRENT Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 40 35 }- E 30 25 ~ 20 i 15 | E | 10 5 F | 4 | | 0 25 50 75 125 150 175 T-[C], CASE TEMPERATURE Power Derating