VTS Process Photodiodes VTS__86 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40C to 150C -40C to 105C Operating Temperature: CASE 44B ANODE (ACTIVE) SURFACE SHOWN CATHODE IS BACKSIDE Series 20, 31 Series 30 -40C to 125C Series 20, 31 -40C to 105C Series 30 DIMENSIONS VTS__86 L .100 (2.54) W .200 (5.08) ACTIVE AREA .0152 (102) ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTS curves, page 67) VTS__86 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC TC ISC Short Circuit Current H = 1000 lux, 2850 K ISC Temperature Coefficient H = 1000 Lux, 2850 K 60 Typ. Max. 80 A .20 %/C Dark Current H = 0, VR = 100 mV 10 TC ID ID Temp. Coefficient H = 0, VR = 100 mV +11 %/C R SH Shunt Resistance H = 0, VR = 10 mV 6.0 M CJ Junction Capacitance H = 0, V = 0 V, 1 MHz 0.25 nF SR Sensitivity @ 400 nm Re Responsivity 400 nm, 0.18 A/W ID .18 100 nA 0.20 A/W 0.02 A/(W/cm2) Sensitivity @ Peak 925 nm 0.60 A/W tR/tF Response Time @ 1 k Load VR = 1 V, 830 nm 0.75 sec VOC Open Circuit Voltage H = 1000 Lux, 2850 K 0.45 Volts VOC Temperature Coefficient H = 1000 Lux, 2850 K -2.6 mV/C TC VOC TC VOC Excelitas Technologies, 10900 Page Ave., St. Louis, MO 63132 USA 0.25 Phone: 314-423-4900 Fax: 314-423-3956 Web: www.excelitas.com 70