2SA715D - Hitachi Semiconductor

2SA715

Silicon PNP Epitaxial

ADE-208-852 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary pair with 2SC1162

Outline

1. Emitter

2. Collector

3. Base

TO-126 MOD

123

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage VCBO –35 V

Collector to emitter voltage VCEO –35 V

Emitter to base voltage VEBO –5 V

Collector current IC–2.5 A

Collector peak current IC(peak) –3 A

Collector power dissipation PC0.75 W

PC*110 W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

2SA715

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage V(BR)CBO –35 — — V IC = –1 mA, IE = 0

Collector to emitter breakdown

voltage V(BR)CEO –35 — — V IC = –10 mA, RBE = ∞

Emitter to base breakdown

voltage V(BR)EBO –5 — — V IE = –1 mA, IC = 0

Collector cutoff current ICBO — — –20 µAV

CB = –35 V, IE = 0

DC current transfer ratio hFE*160 — 320 VCE = –2 V, IC = –0.5 A

hFE 20 — — VCE = –2 V, IC = –1.5 A

(Pulse test)

Base to emitter voltage VBE — –1.0 –1.5 V VCE = –2 V, IC = –1.5 A

(Pulse test)

Collector to emitter saturation

voltage VCE(sat) — –0.5 –1.0 V IC = –2 A, IB = –0.2 A

(Pulse test)

Gain bandwidth product fT— 160 — MHz VCE = –2 V, IC = –0.2 A

(Pulse test)

Note: 1. The 2SA715 is grouped by hFE as follows.

BCD

60 to 120 100 to 200 160 to 320

0.8

0.6

0.4

0.2

0 50 100 150 200

Maximum Collector Dissipation

Curve

Collector power dissipation Pc (W)

Ambient temperature Ta (°C)

Area of Safe Operation

–5

–2

–1.0

–0.5

–0.2

–0.1–1 –2 –5 –10

(–35 V,–0.28 A)

(–4 V,–2.5 A)

–20 –50

Collector to emitter voltage VCE (V)

Collector current IC (A)

TC = 25°C

IC max(DC Operation)

= 10 W

2SA715

Maximum Collector Dissipation Curve

0 50 100 150 200

Collector power dissipation PC (W)

Case temperature TC (°C) Collector to emitter voltage VCE (V)

Collector current IC (A)

Typical Output Characteristics

–2.0

–1.6

–1.2

–0.8

–0.4

0 –1–2–3–4–5

= 25°C

IB = 0

–2 mA

–4

–6

–8

–10

–12

–14

–17

–26

–23

–20

Collector current IC (A)

Typical Transfer Charecteristics

VCE = –2 V

–2.0

–1.0

–0.5

–0.2

–0.1

–0.05

–0.02

–0.010 –0.4 –0.8 –1.2–0.2 –0.5

= 75°C

–25

–1.0 –1.4

Base to emetter voltage VBE (V)

DC Current Transfer Ratio vs.

Collector Current

240

200

160

120

–0.01 –0.02 –0.1 –0.5 –2–0.2 –1.0–0.05

VCE = –2 V

TC = 75°C

–25

DC current transfer ratio hFE

Collector current IC (A)

2SA715

Package Dimensions

3.1

φ+0.15

–0.1

8.0 ± 0.5

2.3 ± 0.3

1.1

3.7 ± 0.7

11.0 ± 0.5

15.6 ± 0.5

0.8

2.29 ± 0.5 2.29 ± 0.5 0.55 1.2

2.7 ± 0.4

120°

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

TO-126 Mod

—

0.67 g

Unit: mm

2SA715

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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Colophon 2.0