DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 12 2002 Feb 04
DISCRETE SEMICONDUCTORS
BC856W; BC857W; BC858W
PNP general purpose transistors
db
ook, halfpage
M3D102
2002 Feb 04 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W;
BC858W
FEATURES
Low current (ma x. 10 0 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switc hing and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC8 47W and BC848W.
MARKING
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
BC856W 3D*
BC856AW 3A*
BC856BW 3B*
BC857W 3H*
BC857AW 3E*
BC857BW 3F*
BC857CW 3G*
BC858W 3M*
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
Fig.1 Simplified outline (SOT323; SC70) and
symbol.
2002 Feb 04 3
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum Sys tem (IEC 60134).
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC856W 80 V
BC857W 50 V
BC858W 30 V
VCEO collector-emitter voltage open base
BC856W 65 V
BC857W 45 V
BC858W 30 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 200 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; note 1 625 K/W
2002 Feb 04 4
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 30 V; IE = 0 115 nA
VCB = 30 V; IE = 0;
Tj = 150 °C−−−4μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−−100 nA
hFE DC current gain IC = 2 mA; VCE = 5 V
BC856W 125 475
BC857W; BC858 W 125 800
BC856AW; BC857AW 125 250
BC856BW; BC857BW 220 475
BC857CW 420 800
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA 75 300 mV
IC = 100 mA; IB = 5 mA;
note 1 250 600 mV
VBEsat base-emitt er saturatio n voltage IC = 10 mA; IB = 0.5 mA 700 mV
IC = 100 mA; IB = 5 mA;
note 1 850 mV
VBE base-emitte r voltage IC = 2 mA; VCE = 5 V 600 650 750 mV
IC = 10 mA; VCE = 5 V −−−820 mV
Cccollector capacitance VCB = 10 V; IE = Ie = 0;
f = 1 MHz −−3pF
Ceemitter cap a citance VEB = 0.5 V; IC = Ic = 0;
f = 1 MHz −−12 pF
fTtransition freque ncy VCE = 5 V; IC = 10 mA;
f = 100 MHz 100 −−MHz
Fnoise figure IC = 200 μA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−−10 dB
2002 Feb 04 5
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
handbook, halfpage
0
200
300
400
500
hFE
100
MGT711
102101110 102103
IC (mA)
(1)
(2)
(3)
Fig.2 DC current gain as a fu nction of collector
current; ty pical values.
BC857AW; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT712
10
2
10
1
110 10
2
10
3
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
BC857AW; VCE = 5 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
10
4
10
3
10
2
10
MGT713
10
1
110 10
2
10
3
IC (mA)
VCEsat
(mV)
(1)
(2)(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857AW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT714
10
1
110 10
2
10
3
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5 Base-emitter saturation v oltage as a
function of collector current; typical values.
BC857AW; IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2002 Feb 04 6
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT715
102101110 102103
IC (mA)
(1)
(2)
(3)
Fig.6 DC current gain as a fu nction of collector
current; ty pical values.
BC857BW; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT716
10
2
10
1
110 10
2
10
3
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
BC857BW; VCE = 5 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
10
4
10
3
10
2
10
MGT717
10
1
110 10
2
10
3
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857BW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT718
10
1
110 10
2
10
3
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9 Base-emitter saturation v oltage as a
function of collector current; typical values.
BC857BW; IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2002 Feb 04 7
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT719
102101110 102103
IC (mA)
(1)
(2)
(3)
Fig.10 DC current gain as a function of collector
current; ty pical values.
BC857CW; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT720
10
1
110 10
2
10
3
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a func tion of
collector current; typical values.
BC857CW; VCE = 5 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
10
4
10
3
10
2
10
MGT721
10
1
110 10
2
10
3
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.12 Collector-emitter saturation voltag e as a
function of collector current; typical values.
BC857CW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT722
10
1
110 10
2
10
3
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
BC857CW; IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2002 Feb 04 8
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
2002 Feb 04 9
NXP Semiconductors Pr oduct data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the prod uct specification.
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Applications Applications that are described herein for
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Docum ent order number: 9397 750 09168