Philips Semiconductors Product specification I PNP Darlington transistor PZTAG4 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 30 V}. 1 base 2,4 collector e Preamplifiers requiring high input impedance. DESCRIPTION | 4 1 24 PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14. TRI TR2 Eh Ele Es wun 8 Top view Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. | MAX. UNIT Vecso collector-base voltage open emitter - ~30 Vv Vees collector-emitter voltage Ver=0 - -30 Vv lo collector current (DC) - ~500 mA Prot total power dissipation Tamb S$ 25 C - 1.25 Ww hee DC current gain Io = -10 MA; Voge = -5 V 10000 - fr transition frequency Io = -10 MA; Vee =-5 Vi f= 100 MHz | 125 - MHz 1997 Jun 20 1172 Phitips Semiconductors Product specification PNP Darlington transistor PZTA64 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vecso collector-base voltage open emitter - ~30 Vv Voces collector-emitter voltage Vor =0 - -30 Vv Vepo emitter-base voltage open collector - ~10 Vv le collector current (DC) - ~500 mA lom peak collector current - -800 mA lp base current (DC) - -200 mA Prot total power dissipation Tamb S 25 C; note 1 - 1.25 WwW T stg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rini-a thermal resistance from junction to ambient note 1 100 K/W Ri j-s thermal resistance from junction to soldering point 19 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector + cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04". 1997 Jun 20 1173 Philips Semiconductors Product specification PNP Darlington transistor PZTA64 CHARACTERISTICS T; = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT logo collector cut-off current le = 0; Vop = -30 V - -100 nA Ices collector cut-off current Vee = 0; Vee = -30 V - -100 nA lego emitter cut-off current Ico = 0; Veg =-10 V - -100 nA Nee DC current gain Voce =5 V; see Fig.2 tc = -10 mA 10000 |- Io = -100 mA 20000 |- Voesat collector-emitter saturation voltage | Ic = -100 mA; Ip = -0.1 mA -~ -1.5 Vv Veron base-emitter voltage le = -100 MA; Vee = -5 V ~ -2 Vv fr transition frequency Ic = -10 MA; Voge = -5 V; f = 100 MHz | 125 ~ MHz 100000 EE 80000 0000 40000 20000 - = -102 ~193 1 10 0 Ig (mA) Veg = -2 V. Fig.2 DC current gain; typical values. 1997 Jun 20 1174