Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
M RF5812, R1, R2
M RF5812G, R1, R2
Rev A 9/2005
* G Denotes RoHS Compliant, Pb free Terminal Finish
R1 suf f ix–T ape and Reel, 500 units
R2 suff ix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 15 Vdc
VCBO Co lle ctor-Base Voltage 30 Vdc
VEBO Emitter-Base Voltage 2.5 Vdc
ICColl ector Current 200 mA
Thermal Data
PDTotal Device Dissipation @ TC = 25ºC
Derat e above 25ºC 1.25
10 Watts
mW/ ºC
SO-8
Features
•Low Noise - 2.5 dB @ 500 MHZ
•Associated Gain = 15.5 dB @ 500 MHz
•Ftau - 5.0 GHz @ 10v, 75mA
•Cost Effective SO-8 package
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
M RF5812, R1, R2
M RF5812G, R1, R2
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 15 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc
ICBO Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA
IEBO Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA
(on)HFE DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc) 50 200
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) -1.4 2.0 pF
Ftau Current-Gain Bandwidth Product
(IC = 75 m Adc, VCE = 10 Vdc, f = 1.0 GHz) -5.0 - GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
M RF5812, R1, R2
M RF5812G, R1, R2
Rev A 9/2005
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
NFmin M inimum Noise Figure
(IC = 50 m Adc, VCE = 10 Vdc, f = 500 MHz) -2.0 3.0 dB
GNF Po wer Gain @ Nfmin
(IC = 50 m Adc, VCE = 10 Vdc, f = 500 MHz) 13 15.5 dB
GU max Maximum Un ilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz -17.8 -dB
MSG Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz -20 -dB
|S21|2Inse rtion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz -15 -dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
fS11 S21 S12 S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 .579 -141 24 107 .024 49 .397 -76
300 .593 -173 8.93 85 .045 66 .233 -103
500 .598 175 5.14 74 .066 69 .248 -110
1000 .592 158 2.64 52 .132 72 .347 -119
2000 .615 115 1.55 20 .310 63 .531 -141
3000 .691 72 1.10 -5 .518 41 .648 -172
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
M RF5812, R1, R2
M RF5812G, R1, R2
Rev A 9/2005
Efficiency (%)
GPE Freq (MHz)
(MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection Guide
MA CRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MA CRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 855 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 855 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 855 12.5 16 400
MA CRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MA CRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 1 10 45 28 30 400
SO- 8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MA CRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MA CRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 612 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Ftau (MHz)
Ccb(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MA CRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MA CRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 270 400
TO-39 MRF544
NPN
13.5 1500 70 400
RF (LNA / General Purpose) Selec tion Guide
Macro X
Power Macro
Macro T
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
M RF5812, R1, R2
M RF5812G, R1, R2
Rev A 9/2005
1. 4.
8. 5.
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER