Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. a a a MDS1654 is suitable device for DC-DC Converters and general purpose applications. VDS = 30V ID = 15A @VGS = 10V RDS(ON) < 9.5m @VGS = 10V < 13.0m @VGS = 4.5V Applications a 6(D) 7(D) 8(D) DC-DC Converters 5(D) D 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS 20 V o Ta=25 C Continuous Drain Current o Ta=100 C Pulsed Drain Current ID IDM o Power Dissipation Ta=25 C (1) Single Pulse Avalanche Energy o Ta=100 C (2) Junction and Storage Temperature Range 15 A 10.5 A 60 A 2.5 PD W 1.25 EAS 98 TJ, Tstg -55~150 Symbol Rating RJA 50 RJC 25 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Feb. 2011. Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1654 - Single N-channel Trench MOSFET 30V MDS1654 Part Number Temp. Range MDS1654URH -55~150 C o Package Packing ROHS Status SOIC-8 Tape & Reel Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.9 3.0 Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = 10V, ID = 15A - 7.1 9.5 VGS = 4.5V, ID = 12A - 9.4 13.0 VDS = 5V, ID = 15A - 19 - 13.7 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 15A, VGS = 10V 6.8 - - 2.0 - - 3.5 - - 1396 - 156 272 nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - Turn-On Delay Time td(on) - 8.4 - tr - 24.6 - - 33 - - 13.6 - - 0.7 1.0 - 19 21 ns - 9 12 nC Rise Time Turn-Off Delay Time Fall Time td(off) VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15V, RL = 3, RG = 3 tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 15A, dl/dt = 100A/s V Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25C, L = 1mH, IAS = 14A, VDD = 15V, VGS = 10V. Feb. 2011. Version 1.1 2 MagnaChip Semiconductor Ltd. MDS1654 - Single N-channel Trench MOSFET 30V Ordering Information 10V 6.0V Drain-Source On-Resistance[ohm] 140 ID, Drain Current[A] 120 4.5V 100 80 60 3.5V 40 3.0V 20 0 0.08 0.06 10V 0.04 0.02 0.00 0 1 2 3 4 4.5V 5 0 10 20 Fig.1 On-Region Characteristics 50 60 12 Notes : 1. VGS = 10 V 2. ID = 15 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.8 1.4 1.2 1.0 10 125 8 6 25 4 0.8 0.6 -50 2 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o T J, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 60 2 10 Notes : VGS = 0V Notes : VDS = 5V 1 IDR, Reverse Drain Current [A] ID, Drain Current [A] 30 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 40 20 125 25 10 0 10 -1 10 125 -2 10 25 -3 10 -4 0 1 2 3 4 10 5 0.0 0.2 0.4 0.6 0.8 1.0 VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Feb. 2011. Version 1.1 3 1.2 MagnaChip Semiconductor Ltd. MDS1654 - Single N-channel Trench MOSFET 30V 0.10 160 1700 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1600 Note : ID = 15A 8 1400 Ciss 1300 1200 Capacitance [pF] VGS, Gate-Source Voltage [V] 1500 6 4 1100 1000 900 800 700 500 Coss 400 2 Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 300 Crss 200 100 0 0 0 5 10 15 20 0 10 20 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 15 2 10 100 ms 1 10 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 10 ms Operation in This Area is Limited by R DS(on) DC 0 10 10 10 5 Single Pulse TJ=Max rated TC=25 -1 10 -1 10 0 10 0 1 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] Ta, Ambient Temperature [] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Ambient Temperature Z JA(t), Normalized Thermal Response 10 1 D=0.5 0.2 0.1 0.1 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JA* R JA(t) + TA R JA=50/W 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Feb. 2011. Version 1.1 4 MagnaChip Semiconductor Ltd. MDS1654 - Single N-channel Trench MOSFET 30V 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified Feb. 2011. Version 1.1 5 MagnaChip Semiconductor Ltd. MDS1654 - Single N-channel Trench MOSFET 30V Physical Dimensions MDS1654 - Single N-channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Feb. 2011. Version 1.1 6 MagnaChip Semiconductor Ltd.