Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.
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MDS1654 – Single N-channel Trench MOSFET 30V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current T
a=25oC ID 15 A
T
a=100oC 10.5 A
Pulsed Drain Current IDM 60 A
Power Dissipation
(1) T
a=25oC PD 2.5 W
T
a=100oC 1.25
Single Pulse Avalanche Energy (2) EAS 98 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150
oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient (1) RθJA 50 oC/W
Thermal Resistance, Junction-to-Case RθJC 25
D
G
S
MDS1654
Single N-Channel Trench MOSFET 30V, 15A, 9.5mΩ
General Description
The MDS1654 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance,
high switching performance and excellent reliability.
MDS1654 is suitable device for DC-DC Converters
and general purpose applications.
Features
à V
DS = 30V
à I
D = 15A @VGS = 10V
à R
DS(ON)
< 9.5mΩ @VGS = 10V
< 13.0mΩ @VGS = 4.5V
Applications
à DC-DC Converters
1(S) 2(S)
3(S)
4(G)
8(D)
7(D)
6(D) 5(D)
Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.
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MDS1654 – Single N-channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing ROHS Status
MDS1654URH -55~150oC SOIC-8 Tape & Reel Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS I
D = 250μA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) V
DS = VGS, ID = 250μA 1.0 1.9 3.0
Drain Cut-Off Current IDSS V
DS = 30V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS V
GS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON) V
GS = 10V, ID = 15A - 7.1 9.5 mΩ
V
GS = 4.5V, ID = 12A - 9.4 13.0
Forward Transconductance gfs V
DS = 5V, ID = 15A - 19 - S
Dynamic Characteristics
Total Gate Charge Qg(10V)
VDS = 15V, ID = 15A,
VGS = 10V
13.7 -
nC
Total Gate Charge Qg(4.5V) 6.8 -
Gate-Source Charge Qgs - 2.0 -
Gate-Drain Charge Qgd - 3.5 -
Input Capacitance Ciss
VDS = 15V, VGS = 0V,
f = 1.0MHz
- 1396
pF Reverse Transfer Capacitance Crss - 156
Output Capacitance Coss - 272
Turn-On Delay Time td(on)
VGS = 10V, VDS = 15V,
RL = 3Ω, RG = 3Ω
- 8.4 -
ns
Rise Time tr - 24.6 -
Turn-Off Delay Time td(off) - 33 -
Fall Time tf - 13.6 -
Drain-Source Body Diode Characteristi cs
Source-Drain Diode Forward Voltage VSD I
S = 1A, VGS = 0V - 0.7 1.0 V
Body Diode Reverse Recovery Time trr I
F = 15A, dl/dt = 100A/μs - 19 21 ns
Body Diode Reverse Recovery Charge Qrr - 9 12 nC
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 14A, VDD = 15V, VGS = 10V.
Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.
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MDS1654 – Single N-channel Trench MOSFET 30V
Fig.5 Transfer Character istics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
012345
0
20
40
60
80
100
120
140
160
3.5V
4.5V
6.0V
10V
3.0V
ID, Drain Current[A]
VDS, Drain-Source Voltage [V]
0 102030405060
0.00
0.02
0.04
0.06
0.08
0.10
10V
4.5V
Drain-Source On-Resistance[ohm]
ID, Drain Current [A]
2345678910
2
4
6
8
10
12
25℃
125℃
RDS(ON) [mΩ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
012345
20
40
60
VGS, Gate-Source Voltage [V]
125℃
25℃
Notes :※
V DS = 5V
ID, Drain Current [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10-4
10-3
10-2
10-1
100
101
102
125℃
Notes :※
VGS = 0V
25℃
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Notes :※
1. VGS = 10 V
2. ID = 15 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.
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MDS1654 – Single N-channel Trench MOSFET 30V
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteris tics
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Ambient Temperature
Fig.11 Transient Thermal Response
Curve
0102030
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20
0
2
4
6
8
10
Note : I※D = 1 5A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
10-1
100
101
102
100 μs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limite d by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
5
10
15
ID, Drain Current [A]
Ta, Ambient Temperature [ ]℃
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
1E-3
0.01
0.1
1
10
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZθJA
* RθJA
(t) + TA
RΘJA
=50 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJA
(t),
Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.
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MDS1654 – Single N-channel Trench MOSFET 30V
Physical Dimensions
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.
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MDS1654 – Single N-channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
