MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# BU208 Features * * * High voltage fast-switching NPN power transistors With TO-3 package Horizontal deflection for color TV NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 700 1500 5.0 7.5 5.0 150 -55 to +150 -55 to +150 TO-3 Unit V V V A A W O C O C A N E C K D U V L H 2 1 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=1500Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) 700 --- Vdc --- 1.0 mAdc --- 10 mAdc G B Q OFF CHARACTERISTICS V (BR)CEO ICBO IEBO PIN 1. PIN 2. CASE. ON CHARACTERISTICS hFE-1 V CE(sat) V BE(sat) BASE EMITTER COLLECTOR DIMENSIONS Forward Current Transfer ratio (IC=4.5Adc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=4.5Adc, IB =2.0Adc) Base-Emitter Saturation Voltage (IC=4.5Adc, IB =2.0Adc) 2.25 --- --- --- 1.0 Vdc --- 1.5 Vdc INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 www.mccsemi.com MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE