SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 ✪
PARTMARKING DETAILS BSS66 - M6
BSS67 - M7
BSS66R - M8
BSS67R - M9
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6V
Peak Pulse Current ICM 200 mA
Continuous Collector Current IC100 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 V I
C
=1mA
Collector-Base Breakdown Voltage V
(BR)CBO
60 V I
C
=10µA
Emitter-Base Breakdown Voltage V
(BR)EBO
6V
I
E
=10µA
Collector- Emitter Cut-off Current I
CES
50 nA V
CES
=30V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.20
0.30
V
V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
Base-Emitter Saturation Voltage V
BE(sat)
0.65 0.85
0.95
V
V
IC=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
Static Forward Current BSS66
Transfer Ratio
h
FE
20
35
50
30
15
150
I
C
=100µA,
I
C
=1mA,
I
C
=10mA, V
CE
=1V
I
C
=50mA*,
I
C
=100mA*,
Static Forward Current BSS67
Transfer Ratio
h
FE
40
70
100
60
30
300
I
C
=100µA,
I
C
=1mA,
I
C
=10mA, V
CE
=1V
I
C
=50mA*,
I
C
=100mA*,
Transition Frequency BSS66
BSS67
f
T
250
300
MHz
MHz
I
C
=10mA, V
CE
=20V
f=100MHz
Collector-Base Capacitance C
obo
4pF V
CB
=5V, f=100kHz
Emitter-Base Capacitance C
ibo
8pF V
EB
=0.5V, f=100kHz
Noise Figure N Typ. 6 dB I
C
=100µA, V
CE
=5V
R
S
=1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
t
d
; t
f
t
s
t
f
35
200
50
ns
ns
ns
V
CC
=3V, I
C
=10mA
I
B1
= I
B2
=1mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BSS66
BSS67
C
B
E
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