Optosiectronics, Division TRW Electronic Components Group Product Bulletin 6331 January 1985 OPTEK TECHNOLOGY INC QbE D i b794540 g000348 4 I r9 T-4)-93 . Slotted Optical Switches Types OPB821, OPB821S12, OPB821S7, OPB821S5 | -305100.03) .071(1.00) | 3789.53) "| +014,06) 0681/.68) 7158(3.94) J OPTICAL 7 aD .38519.02) .29547,24) S828) (285(6.79) 4SOU114.3)MIN 728 AWG \B10115.49) be 50014.09) 0882.18) 225g WaT APERTURE SIZE ' ior) OPRB21S12 .012%,040K0.301.02) ORANGE-ANGOE OPRB2iS7 007 .040(0.18 1.02) GREEN-GATHODE . &. vani.20 OPBE21S5 008x.040(0.13 1.02) mueewan | + er AB) i t; aa DIMENSIONS ARE IN INCHES (MILLIMETERS) BOTTOM VIEW Features Non-contact switching Three standard aperture sizes for high resolution Fast switching speed Description The OP8821, OPB821$12, OPB82187, and OPB821S5 each consist of an infrared emitting diode end an NPN silicon phototransistor mounted in a low cost black plastic housing on opposite sides of a 0.080 (2.03 mm) wide stot. Phototransistor switching takes place whenever an opaque object passes through the slot. The OPB621 is unapertured. The OPBA21S12, OPB821S7, and OPB821S6 each have an aperture in front of the phototransistor for high resolution position sensing. 4.5 (114.3 mm) minimum fangth lead wires ease assembly where PC board mounting is not practical. The OP8821, OPB821812, OPB821S7, and OPB821S5 utilize an OP140 or OP240 LED and an OPSSO family sensor. Absolute Maximum Ratings (14=25C unless otherwise noted) Storage and Operating Temporatura Range ...........0.ccccecacscsaceeccceee ene -40C to + 86C Lead Soldering Temperatura {1/16 inch [1.6 mm] fram case for 5 sec. with soldering iran)......... 2anegitt input Diode Reverse Voltage... cece cece c cece ne eee ge ee eee ees eene teases cuueeenanesenaeerce 2.0V Continuous Forward Current 2.2.2... eee ce cence eee e cence eeeeucuuateeeeeeccaeas 50 mA Peak Forward Current {1 ws pulse width, 300 pps) ............ 0c cccccceveasevssveveaueeeens 3.0A Power Dissipation... 2.0.0.2 o cee ce cc ccevecuccuscuevastesussaeeeeurenanenaes 100 mw) Output Photctransistor Collectar-Emitter Voltage 0.0... cece cece ee cece eee ee see eesseesepevesacerers 30V Emittar-Collector Voltage 2.0.0... cece cee eec ccna ne teeeetveeesenaeerensetnaeeees 0 Power Dissipation... 2.0.0... 0. cece ccc ce cece cee cacceeuetaceaeereneeaannsass 100 mw'2) Motes: (1) AMA flux is recommended. Duretien can be extended io 10 sec. max, when wave soldering. (2) Derata linearly 1.34 mW/C shove 26C, (3} Methanol or isopropanol alcohols are recommended as cleaning agents. Typical Performance Curves OPB821 Horraalizad Gutput Current Rise and Fall Time vs Load Resistance nied 200 T= 20 mA [50% Duty Cyell o * too} Yoo=5 srs & RISE TIME of . z 1 FALL TIME - og 5 8 io * = 5 ama z ? e & oe a = 10 23 4 aS g < oe , = 2 ? s = 7 = * ah de z oO 5 10 165 20 25 30 00 1K 5K 10K IF - FORWARD CURRENT - mA Ri - LOAD RESISTANCE - ohms Optoelectronics Division, TRW Electronic Components Group, 1215 W. Crosby Rd., Carrollton, 1X 75008 (214) 329-2200, TLX 67 6032 or 215040 282 OPTEK TECHNOLOGY INC OLE D i 6798580 Oooo03s449 O i 1, OPB821S12, OPB821S7, OPB821S5 Types OPB821, OP = 41-73 Electrical Characteristics (T= 25C unless otherwise noted) [Symbol | Parameter Min. | Max. | Units | Test Conditions | Input Diode Ve Forward Voltage 1.70 Vv | ip=20 mA Ip Reverse Current 100 pA | Vp=20V Output Phototransistor Vipriceo | Collector-Emitter Breakdown Voltage 30.0 Vo [ies 1.00 mA Vipnieco | Emitter-Collactor Breakdown Voltage 6.0 V te =100 pA lceo Coltector-Emitter Dark Currant 100 nA | Vce= 10.0 V, IF=0, fe=0 Coupled OPB921, OPBB21S12 04 Ic = 250 pA, IF=20 mA Vee(sAT} | Collector-Emitter Saturation Voltage OPE82187 0.4 Ig= 180 pA, Ip=20 mA OPB82185 04 le = 125 pA, Ip=20 mA V v Vv OPB821 500 pA | VceE=10.0 V, IF=20 mA 7 OPE821S12 | 400 pA | Vce=100 V, IF=20 mA IC(ON) On-State Collector Current OPBB2187 300 pA | Vee=10.0 V, \F==20 mA pA OPB921S5 10 VcE= 10.0 V, IF =20 mA Typical Performance Curves OPB821812, OPB821S7, OPBE21SE Normalized Qutput Current Rise and Fall Time Normalized Output Current vs Input Current vs Load Resistance vs Ambient Temperature wo a So =10 Ip=20 mA eo 2 S = S Ss = s VeE=10 (f= 20 mA NORMALIZED TO Ta=26C NORMALIZED OUTPUT CURRENT - % tr tf - RISE AND FALL TIME - jes8c IF=20 mA (50% Duty Cycle) VWec=5 4 nm S NORMALIZED OUTPUT CURRENT - % RISE TIME -2 ; FALL TIME ~~ 0 5 10 15 20 25 30 35 40 4 100 1K 5K 10K -40 -20 0 20 40 60 60 IF ~ FORWARD CURRENT - mA AL - LOAD RESISTANCE - ohms TA AMBIENT TEMPERATURE - C All Assemblies Forward Current Relativa Output Current Reduction in Output Current Due to vs Forward Voltage Input Diode vs Time LED Heating vs Forward Current . 106} z = 1 = 2* 95 at | 5 = = z = Pg ~~... | ~~] +20 5 3 es 00 at 2 5 Be P| 1 2 5 24 95 p = ae 20 = > E 1 - & SY Gob icon ts ceed the instant LED current is appied, The J * Peak ree bay a a ght path is than blocked with an epaque object. 30 seconds later the opaque object is remaved and $c(ONg fs road again. This curve represents the per, cent reduction in 1(0H) between these two readings. 02 04 06 O8 10 12 14 5 10 1 20 2 30 38 40 VF - FORWARO VOLTAGE - VOLTS t- TIME - HOUAS If - FORWARD CURRENT ~ mA ~ on 5 6 ~ o TRW reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optoelectronics Division, TRW Electronic Components Group, 1215 W. Crosby Rd., Carrallton, 1X 75006 (214) 323-2200, TLX 6716032 or 218849 @ TAW Inc. 1985, TAW is the name and mark of TAW Inc. 253 oT 2