DISCRETE POWER AND SIGNAL
TECHNOLOGIES
FDH700
ULTRA FAST DIODE
© 1999 Fairchild Semiconductor Corporation FDH700 - Rev. A
CATHODE
BAND
0.200 (5.08)
0.120 (3.05)
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
0.090 (2.28) Diameter
0.060 (1.53)
0.500 Minimum
12.70 Typ 1.000 LOGO
FD
H7
00
Absolute Maximum Ratings (note 1) TA = 25OC unless otherwise noted
Parameter Value Units
Storage Temperature -65 to +200 OC
Maximum Junction Temperature -65 to +175 OC
Total Power Dissipation at 25OC 250 mW
Derate above 25OC 1.67 mW/OC
Working Inverse Voltage 20 V
DC Forward Current 150 mA
Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics TA = 25OC unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 30 VIR= 5.0 uA
IRReverse Leakage 50 nA VR= 20 V
50 uA VR= 20 V TA = 150OC
VFForward Voltage 420 500 mV IF= 10 uA
520 610 mV IF= 100 uA
640 740 mV IF= 1.0 mA
760 900 mV IF= 10 mA
810 990 mV IF= 20 mA
0.89 1.25 V IF= 50 mA
TRR Reverse Recovery Time 900 ps IF= IR = 10 mA IRR = 1.0 mA
RLoop = 100 Ohm
CTDiode Capacitance 1.5 pF VR= 0 V, f = 1.0 MHz
Information Only Data Sheet
FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
DO-35 PACKAGE
Fairchild Semiconductor's Criteria
11-MAR-97
GLASS SLEEVE
0.150 (3.810)
0.140 (3.556)
0.021 (0.533) Diameter
0.019 (0.483)
0.074 (1.880) Diameter
0.068 (1.727)
NOTE 1:
LEAD DIAMETER NOT CONTROLLED IN
THIS ZONE TO ALLOW FOR FLASH, LEAD
FINISH BUILD-UP, & MINOR
IRREGULARITIES OTHER THAN SLUGS.
0.050 (1.270)
Maximum
SEE NOTE 1 BELOW
1.105 (28.067)
1.081 (27.457)
LEADS: COPPER CLAD STEEL
TYPICAL 20 Mils
LEADS TIN DIPPED
(60% SN 40% PB)
STUDS: DUMET (ALLOY 42)
STANDARD DIGITAL MARKING CRITERIA
MAXIMUM CHARACTERS PER LINE: 3 MAXIMUM NUMBER OF LINES: 4
LOGO AND CHARACTERS M & W COUNT AS 2 CHARACTERS EACH
Package Weight
0.14 grams
CATHODE BAND
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
FD700
Ultra Fast Diode Diode
© 1997 Fairchild Semiconductor Corporation
Absolute Maximum Ratings (note 1) TA = 25OC unless otherwise noted
Parameter Value Units
Storage Temperature -65 to +200 OC
Maximum Junction Temperature -65 to +175 OC
Total Power Dissipation at 25OC 250 mW
Derate above 25OC 1.67 mW/OC
Working Inverse Voltage 20 V
DC Forward Current 150 mA
Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics TA = 25OC unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 30 VIR= 5.0 uA
IRReverse Leakage 50 nA VR= 20 V
50 uA VR= 20 V TA = 150OC
VFForward Voltage 420 500 mV IF= 10 uA
520 610 mV IF= 100 uA
640 740 mV IF= 1.0 mA
760 880 mV IF= 10 mA
810 950 mV IF= 20 mA
0.89 1.10 V IF= 50 mA
TRR Reverse Recovery Time 700 ps IF= IR = 10 mA IRR = 1.0 mA
RLoop = 100 Ohm
CTDiode Capacitance 1.0 pF VR= 0 V, f = 1.0 MHz
DO-7
PACKAGE
Rev. A June 1998
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
DO-7 PACKAGE
Fairchild Semiconductor's Criteria
13-APR-93
BORATED (ALLOY 42) DUMET
COMFAB STUDSEAL (FIRST SEAL)
1.110 (28.194)
1.085 (27.559)
0.287 (7.290)
0.265 (6.731)
0.021 (0.533) Diameter
0.019 (0.483)
0.097 (2.464) Diameter
0.093 (2.362)
SOLDER PREFORM
Sb/Sn (5% - 10% Sb)
LEADS:BORATED (ALLOY 42) DUMET
TYPICAL 20 mils Diameter
LEADS TIN DIPPED (60% SN 40% PB)
Typical Solder Thickness in micro-inches
Min Avg Max
125.9 162.1 204.3
NOTE 1:
LEAD DIAMETER NOT CONTROLLED IN
THIS ZONE TO ALLOW FOR FLASH, LEAD
FINISH BUILD-UP, & MINOR
IRREGULARITIES OTHER THAN SLUGS.
0.050 (1.270)
MAXIMUM
SEE NOTE 1 BELOW
"C" BEND SPRING
GLASS SLEEVE
GLASS PLUG
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
Rev. H3
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license