MOTOROW Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3251AJAN/D e 2N3251AJAN, JTX Processed per MIL4-195001323 PNP Silicon Smal14ignal Transistors ..designed for genera~urpose switching and amplifier applications. CASE 22*, TM06AA .,4., ,, `, ELECTRICAL CHARACTERlSTl~~#*25C unless othetise ~ham@@e.<; OFF CHARA~ERISTICS SWLE 1 ~&18) \ ,g+"?~~+ Colleotor-Emtier Bree@wn''Nge(l) (ic = 10 mAdc) :li}~<':,+ noted.) Symbol M1n M= V(BR)CEO 60 -- Vdc V(BR)CBO 60 -- Vdo V(BR)EBO 5.0 -- Vdo -- -- 20 20 tide @dc I Unit Coll&&off Current `$~~~'" 40 Vht VEB(O = 3.0 V&) ~CE = 40 Vdc, VEB =? .0 Vdc, TA = 150C) [CEX ColleotorCutoff Current ~cB = 40 V*) ICBO -- 20 ti& Emitter Cutoff Cument WEB =3.0 Vdo, VCE = 40 Vdo) IBEx -- 50 tido (1) Pulsed. Pulse Wdth 250 to 350 W, D@ Qcle 1.0 to 2.0%. (ootinued) RN O 9/93 @ Motorola,lm. 19% M-ROLA @ 2N3251AJAN and JTX ,.., COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA 3-53 2N3251AJAN and JTX Q ASSUWNCE TESTING prdPost BumAn) Bum4n Condltlonw 7A = 25 *3"C, VCB 25 Vdc, PD = 360 mW Inltfaland End PointLimits Charactefiatioelasted Symbol Unit Mln M= Mln Mw:':*:~'%:"( ~.$,;w~"" ,,. ,4,,> Yv DeltafromPtium+n MeasuredValues DaltaColleotorCutoffCurrent AICBO -- YO of IntialValue tida Deb DCCurrentGtin(l) AhFE (1) Pulsed.PulseWdth 250 to W W, DutyQcle 1.0to 2.0%. 9 a -- YO of IntialValue 2N3251AJAN and JTX PACWGE DIMENSIONS I F- CASE 243 TW6AA ~.i, ~ ,, ,,.,. ,,,>;;~t~ `