SMD Schottky Barrier Diode RB520G30-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 mA E2 E SOD-723 b Features: - + D Small Surface Mounting Type Low Reverse Current and Low Forward Voltage. E1 L High Reliability c Mechanical Data: Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method Symbol 2026.1. A A1 b c D E E1 E2 L Polarity: Indicated by cathode band. Mounting position: Any. Marking: E A1 A Inches Millimeters Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7 REF Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7 REF Maximum Ratings (at TA=25C unless otherwise specified) Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current Io 100 mA IFSM 500 mA Junction temperature TJ 125 C Storage temperature Tstg -40~+125 C Peak forward surge current Electrical Ratings (at TA=25C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.45 V IF=10mA Reverse current IR 0.5 A VR=10V "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode RB520G30-G (RoHS Device) Electrical Characteristic Curves (RB520G30-G) Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics 1 1m 150C 100 100m Reverse Current (A) Forward Current (A) 125C 150C 10m -25C 25C 1m 75C 100 125C 10 10 75C 1 25C 100n -25C 10n 1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 Forward Voltage (V) 10 20 30 40 Reverse Voltage (V) Capacitance between Terminals (pF) Fig. 3 Capacitance between Terminals 100 SOD-723 PAD-SIZE 0.6 mm. 10 0.7mm. 1 0 5 10 15 20 25 30 Reverse Voltage (V) 1.2mm. "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2