GBL005 thru GBL10
Vishay General Semiconductor
Document Number: 89300
Revision: 16-Nov-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
UL recognition file number E54214
Ideal for printed circuit boards
High surge current capability
Typical IR less than 0.1 µA
High case dielectric strength
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances application.
MECHANICAL DATA
Case: GBL
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 4.0 A
VRRM 50 V to 1000 V
IFSM 150 A
IR5 µA
VF1.0 V
TJ max. 150 °C
Case Type GBL
~
~
~~
Notes
(1) Unit mounted on 3.0" x 3.0" x 0.11" thick (7.5 cm x 7.5 cm x 0.3 cm) aluminum plate
(2) Unit mounted on PCB at 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 mm x 12 mm) copper pads
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10 UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified
output current at
TC = 50 °C
TA = 40 °C IF(AV) 4.0 (1)
3.0 (2) A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 150 A
Rating for fusing (t < 8.3 ms) I2t 93 A2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
GBL005 thru GBL10
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89300
Revision: 16-Nov-11
2
Notes
(1) Unit mounted on 3.0" x 3.0" x 0.11" thick (7.5 cm x 7.5 cm x 0.3 cm) aluminum plate
(2) Unit mounted on PCB at 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 mm x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10 UNIT
Maximum
instantaneous forward
voltage drop per diode
4.0 A VF 1.00 V
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode 4.0 V, 1 MHz CJ95 40 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10 UNIT
Typical thermal resistance RθJA
RθJC
22 (2)
3.5 (1) °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBL06-M3/45 2.18 45 20 Tube
GBL06-M3/51 2.18 51 400 Anti-static PVC tray
Figure 1. Derating Curves Outzput Rectified Current
050 100 150
0
1.0
2.0
3.0
4.0
5.0
60 Hz Resistive or Inductive Load
Heat-Sink Mounting
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm)
Aluminum Plate
P. C . B . M o unted
0.47 x 0.47" (12 x 12 mm)
Copper Pads with 0.375"
(9.5 mm) Lead Length
Ambient Temperature (°C)
Average Forward Output Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
50
100
150
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
Single Sine-Wave
1.0 Cycle
GBL005 thru GBL10
Vishay General Semiconductor
Document Number: 89300
Revision: 16-Nov-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Voltage Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
1000
50 - 400 V
60 - 1000 V
T
A
= 125 °C
T
A
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1 110 100
10
100
1000
50 - 400 V
600 - 1000 V
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBL
0.125 (3.17) x 45°
Chamfer
0.825 (20.9)
0.815 (20.7)
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.098 (2.5)
0.075 (1.9)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76) 0.140 (3.56)
0.128 (3.25)
0.022 (0.56)
0.018 (0.46)
0.050 (1.27)
0.040 (1.02)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.080 (2.03)
0.060 (1.50)
Polarity shown on front side of case, positive lead beveled corner
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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