MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL TIP30 TIP30A TIP30B TIP30C UNITS
Collector-Base Voltage VCBO 40 60 80 100 V
Collector-Emitter Voltage VCEO 40 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Peak Collector Current ICM 3.0 A
Continuous Base Current IB 0.4 A
Power Dissipation PD 30 W
Power Dissipation (TA=25°C) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEO V
CE=30V (TIP30, TIP30A) 0.3 mA
ICEO V
CE=60V (TIP30B, TIP30C) 0.3 mA
ICES VCE=Rated VCEO 0.2 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=30mA (TIP30) 40 V
BVCEO I
C=30mA (TIP30A) 60 V
BVCEO I
C=30mA (TIP30B) 80 V
BVCEO I
C=30mA (TIP30C) 100 V
VCE(SAT) I
C=1.0A, IB=125mA 0.7 V
VBE(ON) V
CE=4.0V, IC=1.0A 1.3 V
hFE V
CE=4.0V, IC=0.2A 40
hFE V
CE=4.0V, IC=1.0A 15 75
hfe V
CE=10V, IC=0.2A, f=1.0kHz 20
fT V
CE=10V, IC=0.2A, f=1.0MHz 3.0 MHz
ton I
C=1.0A, IB1= IB2=0.1A, RL=30Ω 0.3 μs
toff I
C=1.0A, IB1= IB2=0.1A, RL=30Ω 1.0 μs
TIP30
TIP30A
TIP30B
TIP30C
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP30 series devices
are silicon PNP epitaxial-base power transistors designed
for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (12-March 2014)
www.centralsemi.com
TIP30
TIP30A
TIP30B
TIP30C
SILICON
PNP POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (12-March 2014)
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(001)
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