MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 58
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC404
GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
v03.0907
General Description
Features
Functional Diagram
The HMC404 chip is a sub-harmonically pumped
(x2) MMIC image rejection mixer with an integrated
LO ampli er which can be used as an upconverter
or downconverter. The chip utilizes a GaAs PHEMT
technology that results in a small overall chip area of
2.31mm2. The on-chip 90° hybrid provides excellent
amplitude and phase balance resulting in greater than
22 dB of image rejection. The LO ampli er is a single
bias (+4V) two stage design with only +2 dBm nominal
drive required.
Integrated LO Ampli er: +2 dBm Input
Sub-Harmonically Pumped (x2) LO
Image Rejection: 22 dB
Small Size: 1.90 x 1.25mm
Electrical Speci cations, TA = +25° C
Typical Applications
The HMC404 is ideal for:
• 26 to 33 GHz Microwave Radios
• Up and Down Converter for
Point-to-Point Radios
• Satellite Communication Systems
* Unless otherwise noted, all measurements performed as downconverter.
Parameter
IF = 1 GHz
LO = +2 dBm & Vdd = +4V Units
Min. Typ. Max.
Frequency Range, RF 26 - 33 GHz
Frequency Range, LO 13 - 16.5 GHz
Frequency Range, IF DC - 3 GHz
Conversion Loss (As IRM) 11 15 d B
Image Rejection 15 22 dB
Noise Figure 11 15 d B
1 dB Compression (Input) +2 +6 dBm
2LO to RF Isolation 20 35 dB
2LO to IF Isolation 20 35 dB
IP3 (Input) 8 16 dBm
Amplitude Balance ±1.5 dB
Phase Balance ±7 Deg
Supply Current (Idd) 28 38 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs. Temperature
@ LO= +2 dBm, Vdd= +4V
Upconverter Performance Conversion
Gain vs. LO Drive @ Vdd= +4V
Conversion Gain
vs. LO Drive @ Vdd= +4V
Image Rejection vs. Temperature
@ LO= +2 dBm, Vdd= +4V
Input P1dB vs. Temperature
@ LO= +2 dBm, Vdd= +4V
Input IP3 vs. LO Drive @ Vdd= +4V*
* Two-tone input power= -10 dBm each tone, 1 MHz spacing.
Data Taken As IRM
With 1 GHz IF Hybrid
-30
-25
-20
-15
-10
-5
0
24 26 28 30 32 34 36
+25C
-55C
+85C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
24 26 28 30 32 34 36
+25C
-55C
+85C
IMAGE REJECTION (dB)
RF FREQUENCY (GHz)
0
2
4
6
8
10
26 27 28 29 30 31 32 33
+25C
-55C
+85C
P1dB (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
26 27 28 29 30 31 32 33
0 dBm
+2 dBm
+4 dBm
+6 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
24 26 28 30 32 34 36
-2dBm
0dBm
+2dBm
+4dBm
+6dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
24 26 28 30 32 34 36
0 dBm
+2 dBm
+4 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs.
Vdd @ LO= +2 dBm, IF= 100 MHz
Isolation @ LO= +2 dBm,
IF= 100 MHz, Vdd= +4V
Amplitude Balance vs. Temperature
@ LO= +2 dBm, IF= 100 MHz, Vdd= +4V
Phase Balance vs. Temperature
@ LO= +2 dBm, IF= 100 MHz, Vdd= +4V
Return Loss @ LO= +2 dBm, Vdd= +4V IF Bandwidth @ LO= +2 dBm, Vdd= +4V
Quadrature Channel Data
Taken Without IF Hybrid
-25
-20
-15
-10
-5
24 26 28 30 32 34 36
3.75V
4.0V
4.25V
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Conversion Gain
Return Loss
RESPONSE (dB)
IF FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
24 26 28 30 32 34 36
+25C
-55C
+85C
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
-3
-2
-1
0
1
2
3
24 26 28 30 32 34 36
+25C
-55C
+85C
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
25 26 27 28 29 30 31 32 33 34 35
RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF
ISOLATION (dB)
RF FREQUENCY (GHz)
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 61
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MxN Spurious @ IF Port, Vdd = +4V MxN Spurious @ RF Port, Vdd = +4V
nLO
mRF ±5 ±4 ±3 ±2 ±1 0
-3
-2 65
-1 28 71
022-3
1X5518
27656
3
RF = 30.5 GHz @ -10 dBm
LO = 15 GHz @ +2 dBm
All values in dBc below IF power level.
Measured as downconverter
nLO
mIF ±5 ±4 ±3 ±2 ±1 0
-3 66
-2 64 64
-1 X 53
0176
1225736
27665
355
IF = 0.5 GHz @ -10 dBm
LO = 15 GHz @ +2 dBm
All values in dBc below RF power level.
Measured as upconverter.
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
RF / IF Input (Vdd = +5V) +13 dBm
LO Drive (Vdd = +5V) +13 dBm
Vdd 5.5V
Continuous Pdiss (Ta = 85 °C)
(derate 2.64 mW/°C above 85 °C) 238 mW
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
8. NO CONNECTION REQUIRED TO UNLABED BOND PADS
Die Packaging Information [1]
Standard Alternate
GP-2 [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 63
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1LO This pad is AC coupled and matched
to 50 Ohm.
2Vdd
Power supply for the LO Ampli er. An external RF bypass
capacitor of 100 - 330 pF is required. A MIM border capacitor
is recommended. The bond length to the capacitor should be
as short as possible. The ground side of the capacitor should
be connected to the housing ground.
3RF This pad is AC coupled and matched
to 50 Ohm.
4IF2
This pin is DC coupled. For applications not requiring opera-
tion to DC, this port should be DC blocked externally using a
series capacitor whose value has been chosen to pass the
necessary IF frequency range. For operation to DC, this pin
must not source/sink more than 3mA of current or die non-
function and possible die failure will result.
5IF1
This pin is DC coupled. For applications not requiring opera-
tion to DC, this port should be DC blocked externally using a
series capacitor whose value has been chosen to pass the
necessary IF frequency range. For operation to DC, this pin
must not source/sink more than 3mA of current or die non-
function and possible die failure will result.
Pad Descriptions
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagrams
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 65
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin  lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin  lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC404
v03.0907 GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
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