SEMIKRON Vasu | VRRM (*) ltrms (maximum values for continuous operation) VpRM dt Sor 220A | 280A lTav (sin. 180; Tease =... C) Vv Vv V/us 140 A (80 C) 178 A (78 C) T 500 400 200 SKT 130/04 C SKT 160/04 C 700 600 200 SKT 130/06 C* SKT 160/06 C 900 800 200 SKT 130/08 C SKT 160/08 C 1300 | 1200 200 SKT 130/12 C* SKT 160/12 C* 1000 SKT 130/12 E SKT 160/12E 1500 | 1400 , 1000 SKT 130/14 E SKT 160/14E 1700 | 1600 | 1000 SKT 130/16 E* | SKT 160/16 E* Symbol | Conditions SKT 130 SKT 160 ITav sin. 180; Tcase = 85C 130A 160A Irom [Ty = 25C 3500 A 4300 A Ty = 130C 3000 A 3750 A it Ty = 25C 61000 As | 92500 As Ty = 130C 45000 A?s | 70000 As toa Ty = 25C: le = 1A;die/dt = 1A/us typ. 1 us tgr Vp = 0,67 -Vprm typ. 2us {di/dt)or| f = 50...60 Hz 100 A/ us lH Ty = 25C; typ./max. 150 mA/250 mA Iu Ty = 25C; Re = 330; typ./max. 300 mA/600 mA tg Ty = 130C; typ. 120 us Vt Ty = 25C: Ir = 500A: max. 2,25V | 1,75V Vito) =| Ty = 180C 1,2V 1,0V IT Ty = 130C 2,2mQ 15mQ Ipp. tro | Ty = 130C; Vop = Vorm :Vrp = VrRM 50mA 50 mA Vet Ty = 25C 3V let Ty = 25C 200 mA Veo | Ty = 130C 0,25V lap Ty = 130C ; 10 mA Rihjc cont. | 0,16 C/W sin. 180/rec. 120 0,18/0,20 C/W Rich 0,03 C/W Ty -40... +130C Tstg -55... +150 C M SI units 30 Nm US units 265 Ib. in. a 5-9,81m/s" Ww 2,10g Case B6 * Available with UNF thread Thyristors SKT 130 SKT 160 Features e Hermetic metal cases with ceramic insulators @ Threaded studs ISO M16 x 1,5 0r UNF 3/4-16 e@ International standard cases Typical Applications e DC motor control (e. g. for machine tools) e@ Controlled rectifiers (e. g. for battery charging) @ AC controllers {e. g. for temperature control) by SEMIKRON B3~23 300 Ty id T wy SKT130> 200 100 Fray Q Itay 50 400 Rthja = cont. 0,4 0,35 0,3 0,25 0,2 90 0,45 | 0,5 120 | bis ocjw 0,6 | 0,7 ' 0,8 1 1,2 1,4 1,6 | lC/wW 100 150 A OTamb 50 Fig. 1a Power dissipation vs. on-state current and ambient temperature 400 w_SKT 160 300 200 100 Pray 0 0 lav 50 100 Rthia= 0,25 c/w 150 A 0 Tomb 50 100 Fig. 1b Power dissipation vs. on-state current and ambient temperature 200 A 180 160 140 120 100 90 80 60 60 30 40 }-15 20 | el Itav O Tease 50 Fig. 2a Rated on-state current vs. case temperature 250 r j SKT 130. e. 200 150 = 90= 100 60 30 50 15 Set av o 100 o 150 @ Tease 50 300 200 100 TAV 0 150 400 300 200 100 Pray o 150 on. SKT 160 Pel Fig. 2b Rated on-state current vs. case temperature 100 150 B3-24 by SEMIKRON sEMIKRON 1000 ore xT SKT 130 6 S$KT 160 | 400 -}1y)-190 & 200 100 60 40 20 Q wr 10 al 40 60Ajs100 Fig. 3 Recovered charge vs. current decrease 1 2ing 4 6 10 20 , Ht | N Peer eps 018 --- SKT 130 = ) Ric - SKT 160 | + poh et Lobia. de LL ti 0 30 60 90 420 150 = 180 Fig. 5 Thermal resistance vs. conduction angle 600 t A SKT 160 400 200 Tyj= 130 25130 250 | %6 vp OS 1 4,5 2 Vv 245 Fig. 6 b On-state characteristics 0,.2-- ah TTA TUTTI TE | Tum w . SKT 130 Jb tia Zthih - SKT 160 Lit a / Ll Hun | L Bphic )p=Zithit+Zith)z LL HEE | LTT [tl | | 6 | Zithyz ociw! TM sin, "ree. 7 | | 360, | 0 1 Tt 180|0,020 0,028 Jf 120 0,027 0,040 V 90 /0.035:0,051 e 60 [0.051 |0,.068 WW 30 | 0,082] 0,090 + 15 [0,103 | 0.103 Zhjt et | Toon eel | ee ee 0 ALE Tn a 403 + 10-2 1071 10 101 s 102 Fig. 4 Transient thermal impedance vs. time ILEUS | SKT130 VA - typ. ith. ol Oo vT 0,5 Fig. 6 a On-state characteristics 1500 w SKT 130 1000 500 Pray O Nay 100 200 300 400 A 500 Fig. 7a Power dissipation vs. on-state current by SEMIKRON 1500 SKT 160 - rec.60 1000 500 Pray 0 Itay 100 200 +300 400 500 A600 Fig. 7b Power dissipation vs. on-state current 3 2-SKT 130 l SKT 160 10! 10 Ig2 345 10 2.6345 10 Fig. 9 Gate trigger characteristics 'tlov) ITSM 1,8 16 SKT 130 SKT 160 1,2: 0,6 ny 40 1 10! 10? ms 103 Fig. 8 Surge overload current vs. time 10 2345 A107 B3-26 by SEMIKRON