Data Sheet No. PD60200-A IR2304(S) HALF-BRIDGE DRIVER Features Product Summary * Floating channel designed for bootstrap operation * * * * * * * * VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Under voltage lockout for both channels 3.3V, 5V, and 15V input logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels Lower di/dt gate driver for better noise immunity Internal 100ns dead-time Output in phase with input 600V max. 60 mA/130 mA 10 - 20V 50 ns 100 ns 220/220 ns Package Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with independent high and 8 Lead SOIC 8-Lead PDIP low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. 2106/2301/2108/2109/2302/2304 Feature Comparison The logic input is compatible with standard CrossCMOS or LSTTL output, down to 3.3V logic. The Input conduction Part Dead-Time Ground Pins logic prevention output driver features a high pulse current buffer logic stage designed for minimum driver cross-con2106/2301 COM HIN/LIN no none duction. The floating channel can be used to drive 21064 VSS/COM an N-channel power MOSFET or IGBT in the 2108 Internal 540ns COM HIN/LIN yes Programmable 0.54~5 s high side configuration which operates up to 21084 VSS/COM 2109/2302 Internal 540ns COM 600 volts. IN/SD yes 21094 2304 Block Diagram HIN/LIN Programmable 0.54~5 s VSS/COM Internal 100ns COM yes up to 600V Vcc HIN LIN LIN HIN VCC COM VB HO VS LO TO LOAD IR2304 www.irf.com 1 IR2304 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VS High side offset voltage VB High side floating supply voltage Min. Max. VB - 25 VB + 0.3 -0.3 625 VS - 0.3 VB + 0.3 Units VHO High side floating output voltage HO VCC Low side and logic fixed supply voltage -0.3 25 VLO Low side output voltage LO -0.3 VCC + 0.3 -0.3 VCC + 0.3 VCC -25 VCC + 0.3 VIN Logic input voltage (HIN, LIN) Com Logic ground dVS/dt PD RthJA Allowable offset voltage SLEW RATE Package power dissipation @ TA +25C Thermal resistance, junction to ambient -- 50 8-Lead SOIC -- 0.625 8-Lead PDIP -- 1.0 8-Lead SOIC -- 200 8-Lead PDIP -- 125 TJ Junction temperature -- 150 TS Storage temperature -50 150 TL Lead temperature (soldering, 10 seconds) -- 300 V V/ns W C/W C Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Min. Max. VB High side floating supply voltage Definition VS + 10 VS + 20 VS High side floating supply offset voltage Note 1 600 VHO High side (HO) output voltage VS VB VLO Low side (LO) output voltage COM VCC VIN Logic input voltage (HIN, LIN) COM VCC VCC Low side supply voltage 10 20 -40 125 TA Ambient temperature Units V C Note 1: Logic operational for VS of COM -5 to COM +600V. Logic state held for VS of COM -5V to COM -VBS. 2 www.irf.com IR2304 Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and VS is applicable to HO and LO. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VBSUV+ VCC and VBS supply undervoltage positive going threshold 8 8.9 9.8 VCCUVVBSUV- VCC and VBS supply undervoltage negative going threshold 7.4 8.2 9 VCCUVH VBSUVH VCC supply undervoltage lockout hysteresis 0.3 0.7 -- ILK Offset supply leakage current -- -- 50 IQBS Quiescent VBS supply current 20 60 150 IQCC Quiescent VCC supply current 50 120 240 VIH Logic "1" input voltage 2.3 -- -- VIL Logic "0" input voltage -- -- 0.8 VOH High level output voltage, VBIAS - VO -- -- 2.8 VOL Low level output voltage, VO -- -- 1.2 IIN+ Logic "1" input bias current -- 5 40 IIN- Logic "0" input bias current -- 1.0 2.0 IO+ Output high short circuit pulse current 60 -- -- IO- Output low short circuit pulsed current 130 -- -- V VB = VS = 600V A VIN = 0V or 5V VIN = 0V or 5V V IO = 20mA A mA VIN = 5V VIN = 0V VO = 0V PW 10 s Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, VS = COM, CL = 1000 pF and TA = 25C unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-on propagation delay 120 220 320 VS = 0V toff VS = 0V or 600V Turn-off propagation delay 130 220 330 tr Turn-on rise time 60 200 300 tf Turn-off fall time 20 100 170 DT Dead time 80 100 190 MT Delay matching, HS & LS turn-on/off -- -- 50 www.irf.com ns 3 IR2304 Functional Block Diagram VB 2304 UV DETECT HO R HV LEVEL SHIFTER HIN R PULSE FILTER S VS PULSE GENERATOR SHOOTTHROUGH PREVENTION VCC UV DETECT DELAY LIN Q LO COM Lead Definitions Symbol Description VCC Low side supply voltage COM Logic ground and low side driver return HIN Logic input for high side gate driver output LIN Logic input for low side gate driver output VB High side floating supply HO High side driver output VS High voltage floating supply return LO Low side driver output 4 www.irf.com IR2304 Lead Assignments 1 LIN VB 8 1 LIN VB 8 2 HIN HO 7 2 HIN HO 7 3 VCC VS 6 3 VCC VS 6 4 COM LO 5 4 COM LO 5 8-Lead PDIP 8-Lead SOIC HIN LIN HO Internal Deadtime LO Figure 1. Input/Output Functionality Diagram www.irf.com 5 IR2304 50% 50% HIN LIN t on t off tr 90% 90% HO LO tf 10% 10% Figure 2. Switching Time Waveforms HIN LIN 50% 50% 90% 10% LO HO DT DT 90% 10% Figure 3. Internal Deadtime Timing 6 www.irf.com IR2304 Case outlines 01-6014 01-3003 01 (MS-001AB) 8-Lead PDIP D DIM B 5 A FOOTPRINT 8 6 7 6 5 H E 1 6X 2 3 0.25 [.010] 4 e A 6.46 [.255] 3X 1.27 [.050] e1 0.25 [.010] A1 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 .1574 3.80 4.00 E .1497 e .050 BASIC e1 MAX 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b 8X 1.78 [.070] MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN y 0.10 [.004] 8X L 8X c 7 C A B NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA. 8 Lead SOIC 5 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXC EED 0.15 [.006]. 6 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXC EED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 01-6027 01-0021 11 (MS-012AA) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 8/1/2003 www.irf.com 7