ISA SGS-THOMSON TXN/TYN 058 (G) ---> MICROELECTRONICS TXN/TYN 1008 (G) SCR FEATURES a HIGH SURGE CAPABILITY a HIGH ON-STATE CURRENT A aa + kK a HIGH STABILITY AND RELIABILITY @ a TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) f DESCRIPTION The TYN/TXN 058 ---> TYN/TXN 1008 Family of Silicon Controlled Rectifiers uses a high performance K glass passivated chips technology. A a This general purpose Family of Silicon Controlled TO 220 AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit 'T(RMS) RMS on-state current TXN | Tc=85C 8 A (180 conduction angle) TYN | Tc=90C IT(AV) Average on-state current TXN | Tc=85C 5 A (180 conduction angle,single phase circuit) TYN | Tc=90C ITSM Non repetitive surge peak on-state current tp=8.3 ms 84 A ( Tj initial = 25C ) tp=10 ms 80 it (2t value tp=10 ms 32 A2s di/dt Critical rate of rise of on-state current 50 Ajus Gate supply : Iq = 250 mA dig/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter TYN/TXN Unit 058 | 108 | 208 | 408 | 608 | 808 | 1008 VDRM Repetitive peak off-state voltage 50 100 | 200 | 400 | 600 | 800 | 1000 Vv VRRM Tj= 125C July 1991 V5 101 TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) THERMAL RESISTANCES Symboi Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/W Rth (j-c}) DC | Junction to case for DC TXN 3.5 C/W TYN 2.5 GATE CHARACTERISTICS (maximum values) PG (AV) = 1W Pam = 40W (tp = 20s) IFGM = 4A (tp=20us) VEGM = 16V(tp=20us) VAGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit BLANK G IGT Vp=12V (DC) Ay_=33Q Tj=25C MAX 15 25 mA VaT Vp=12V. (DC) AL=332 Tjz25C | MAX 15 Vv Vep | Vb=VoRM RL=3.3kO Ti= 110C | MIN 0.2 Vv tot Vo=VpRM |G = 90mA Tj=25C TYP 2 ps dig/dt = 0.8A/1s I Ig= 1.2 IGT Tjs25C | TYP 50 mA IH tT= 100mA = gate open Tj=25C MAX 30 45 mA VTM ITM= 16A tp= 380us Tj=25C | MAX 18 Vv IDRM VDRM Rated Tj=25C MAX 0.01 mA IRRM VRRM Rated T= 110C 2 dV/at Linear slope up to Vp=67%VDRM Tj= 110C | MIN 200 500 Vins gate open Tq Vp=67%VpRM lTM=16A VR= 25V Tj= 110C | TYP 70 ps ditm/dt=30 A/ps dVp/dt= 50V/us 2/5 102 SG -THOMSO 1ST] SES THOMSON TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Package iV BLANK G TXN 50 Xx X (Insulated) x x x Xx Xx Xx Xx xX X x x Xx TYN xX X (Uninsulated) x Xx Xx xX xX x X 1000 x X Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power average on-state current (TXN). dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (TXN). P (Ww) P (W) Tcase (C} 8-_ 8 80 60 Rth:-0 C/W / \ \ FP escrw 6r A 6 5C/W a P< pc \ 10 C/W' . ~~ 90 LZ p< | ~ a 0 4 PSC Qi: 120 47> @ +180 SJ y A hoe. a0 | \ 100 2 Qi: 60 | 2 \ Of: 30 \ ( Tamb (C) T(av) (A) 0 oo 110 0 1 2 3 4 5 6 7 8 0 20 40 6O 80 100 120 140 Fig.3 : Maximum average power dissipation versus Fig.4 : Correlation between maximum average power average on-state current (TYN). dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TYN). P (wW) P (Ww) Tease (C) 10 10 7 60 Q@ +180 Rths-0 C/W | 785 = 5 C/W a A oc \ee -crw |T 99 . dan | 6 Qs 180 6 Wl 95 Ad = 120 4 4 ca Ql+ 90 | 100 Ql: 60 2 2 : 105 Qi 30 bray) (A) Tamb ("C) \ 0 Ll l 4 L o | | 110 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 3/5 k SGS-THOMSON Jf icnoEzeTRONIES 3 10 TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.5 : Average on-state current temperature (TXN). Vrcayy (A) 10 Tease("C) o 0 10 20 30 40 50 60 70 80 90 190110 Fig.7 : Average on-state current temperature (TYN). tayy (A) 10 Tease("C) Qo O 10 20 30 40 50 60 70 80 90 100110 Fig.9 : Relative variation of gate trigger current versus versus versus case Fig.6 : Thermal transient impedance junction to ambient versus pulse duration (TXN). Zth (c/w) 1.0E+02 = r Zth j-a 1.0E+01 Zth j-c 1.0&+00 t (s) 4.0&-01 1OE-03 10E-02 10E-01 10E+00 10E+O1 1.0E*G2 10E+03 Fig.8 : Thermal transient impedance junction to ambient versus pulse duration (TYN). Zth ( C/W) m= HC Hie 10E-01 HA CU TTT * =? J 10E-03 1.0E-02 LOE-O01 10600 1.0E+01 f10E*02 10E+03 Fig.10 : Non repetitive surge peak on-state current junction temperature. versus number of cycles. igtITj} thi] Iga (A) tgtlTi=25C] = Ih{Tj225 C] 100 crt 25 r Tj initial 25C 80 2 Igt 15 Sy 9 60 oT PRS rH) 1 ~ 40 Ih SS PN ay Lj | | NU 0.5 | > 20 an iaseet Tj (C) Number of cycles 0 ra 0 Lippitt 4 -40-30-20-10 0 10 20 30 40 50 60 70 80 30 100110 1 10 100 1000 4/5 ky7 SGS-THOMSON YL icrogaerncncs 104 Fig.11 : Non repetitive surge peak on-state current for a sinusoidal pulse with width corresponding value of I2t. Itsm (A). Wt (As) TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) t < 10 ms, and Tj initial 25C | ty (A) 100 Tj initial Fig12 : On-state characteristics (maximum values). 25C 100 10 max Tj max Vto = 0.85V Rt -0.0460 VTm(v) 10 1 0 1 3 4 5 PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic 10,9201 88 BS 4.65 10.17 sites 1.052 818] oo 3.6 B08 | al al > . || wi _ o cu 8 0.80 1.20 4.45 : 1.75 | | cs} x 1 ht x rs Ih Il Fp oss b : 0.8 10.18 wf 7 0.5 40.15 2.84 $0.28 2.94 + 0.28 whe 4 * 0-3 AG Cooling method : by conduction (method C) Marking : type number Weight : 29 Polarity :NA Stud torque : NA 5/5 i SGS-THOMSON JF ICROELECTRAMICS 105