BC807 SERIES 45 Volts VOLTAGE POWER SOT-23 330 mWatts Unitinch(mm) * General purpose amplifier applications 0.120(3.04) * PNP epitaxial silicon, planar design 0.110(2.80) 0.006(0.15)MIN. FEATURES 0.103(2.60) * Collector current I C = 500mA * Lead free in comply with EU RoHS 2002/95/EC directives. * Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) MECHANICAL DATA 0.047(1.20) * Case: SOT-23, Plastic 0.008(0.20) 0.079(2.00) * Terminals: Solderable per MIL-STD-750, Method 2026 0.003(0.08) 0.070(1.80) * Apporx. Weight: 0.0003 ounces, 0.0084 grams 0.086(2.20) PNP GENERAL PURPOSE TRANSISTORS * Device Marking : BC807-16 : 7A BC807-25 : 7B 0.044(1.10) 0.004(0.10)MAX. BC807-40 : 7C 0.035(0.90) 0.020(0.50) 0.013(0.35) MECHANICAL DATA PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -500 mA PTOT 330 mW TJ , TSTG -55 to 150 oC SYMBOL Value UNIT Thermal Resistance Junction to Ambient (Note 1) RJA 375 oC/W Thermal Resistance Junction to Lead RJL 220 oC/W Collector Current - Continuous Total Power Dissipation (Note 1) Junction and Storage Temperature Range THERMAL CHARACTERISTICS PARAMETER Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions. March 1,2011-REV.03 PAGE . 1 BC807 SERIES ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (IC=-10mA, IB=0) V (BR)CEO -45 - - V Collector-Base Breakdown Voltage (V EB=0V, IC=-10A) V (BR)CBO -50 - - V Emitter-Base Breakdown Voltage (IE=-1A,Ic=0) V(BR)EBO -5.0 - - V IEBO - - -100 nA ICBO - - 100 160 250 - 250 400 600 40 - - Emitter-Base Cutoff Current (V EB=-5V) Collector-Base Cutoff Current (V CB=-20V,IE=0) TJ =25OC TJ =150OC BC807-16 BC807-25 BC807-40 DC Current Gain (Ic=-100mA,VCE=-1V) hFE (Ic=-500mA,VCE=-1V) -100 nA -5.0 A - Collector-Emitter Saturation Voltage (Ic=-500mA ,IB=-50mA) VCE(SAT) - - -0.7 V Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V) VBE(ON) - - -1.2 V CCBO - 7.0 - pF fT 100 - - MHz Collector-Base Capacitance (V CB=-10v,IE=0,f=1MHz) Current Gain-Bandwidth Product (Ic=-10mA,VCE=-5V,f=100MHz) ELECTRICAL CHARACTERISTICS 1000 1000 O T J = 150 C O 100 O TJ = 25 C hFE hFE T J = 150 C O TJ = 25 C 100 O T J = 100 C O T J = 100 C 10 0.01 V CE = 1V 0.1 1 10 100 V CE = 1V 10 0.01 1000 0.1 Fig. 1. Fig. 2. BC807-16 Typical hFE vs. I C 1000 1 10 100 1000 Colle ctor Cur r e nt , IC ( m A ) Colle ctor Cur r e nt , I C ( m A ) BC807-25 Typical hFE vs. I C 100 o TJ=150 C CIB (EB) o o TJ=100 C 100 10 0.01 Capacitance, CJ (p F) hFE TJ=25 C March 1,2011-REV.03 COB (EB) V CE = 1V 0.1 1 10 100 1000 Colle ctor Curre nt , I C ( m A ) Fig. 3 10 BC807-40 Typical h FE vs. 1 0.1 1 10 100 Reverse Voltage, VR (V) IC Fig. 4 Typical Capacitances PAGE . 2 BC807 SERIES MOUNTING PAD LAYOUT SOT-23 0.035 MIN. (0.90) MIN. Unitinch(mm) 0.078 (2.00) 0.037 (0.95) 0.043 (1.10) 0.031 MIN. (0.80) MIN. 0.043 (1.10) 0.106 (2.70) ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2012 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. March 1,2011-REV.03 PAGE . 3