VB025MSP6TR-E - STMicroelectronics

VB025SP

HIGH VOLTAGE IGNITION COIL DRIVER

POWER IC

■PRIMARY COIL VOLTAGE INTERNALLY SET

■COIL CURRE NT LIMIT INTERNA LLY SE T

■LOG IC LEV EL CO M PA TIB LE INP UT

■DRIVING CURRENT QUASI

PRO PO RTI ONAL TO CO LLECT OR

CURRENT

■SINGLE FLAG-ON COIL CURRENT

DESCRIPTION

The VB025SP is a high voltage power integrated

circuit made using STMicroelectronics VIPower

Technology, with vertical current flow power

darlington and logic level compatible driving circuit.

Built-in protection circuits for coil current limiting

and collector voltage clamping allows the

VB025SP to be used as a smart, high voltage,

high current interface in advanced electronic

ignition systems.

March 1999

B LOCK DI AG RAM

TYPE Vcl Icl Id

VB025SP 380 V 9 A 100 mA

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ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

HVCCollector Voltage (Internally L imited) -0.3 to Vclamp V

ICCollector Current (Internally Limited) 10 A

IC(gnd) DC Current on Emitter Powe r ± 10.5 (∗)A

CC Driving Stage Supply Voltage -0.3 to 7 V

IsDriving Circuitry Supply Current ± 200 mA

Is(gnd) DC Current on Ground Pin ± 1A

in Input Voltage -0.3 to VCC + 0.3 V

Iin Maximum Input Current 100 mA

fin Logic Input Frequency in Operative Mode DC to 150 Hz

Vout(flag) Output Voltage Primary Threshold Current Level -0.3 to VCC + 0.3 V

Iout(flag) Flag Output Current 100 mA

Pmax Power Dissipation (TC = 105 oC) TBD W

Es/b Clamped Energy Durin g Outpu t Power Clamping 300 mJ

VESD ESD Voltage (HVC Pin) ± 4KV

ESD ESD Voltage (Other Pins) ± 2KV

BD Input Darlington Base Current 150 mA

VBD Input Darlington Base Voltage Internally Limited V

TjOperating Junction Temperature -40 to 150 oC

Tstg Storage Temperature Range -55 to 150 oC

(∗) Wit h 10 mils Al wire

THERMAL DATA

Rthj-case Thermal Resistance Junction Case (MAX) 1.2 oC/W

Rthj-h Thermal Resistan ce Jun ction Heatsink with FR4 (M AX) TBD (✭)oC/W

Tsold Lea d Temperature During Soldering (MAX) TBD (✭)oC

(✭) see a ppl icat i on note AN515/1094 on VIPower data-book 1st edition.

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CONNECTION DIAGRAM

PIN FUNCTION

No NAME FUNCTION

1-5 GND Emitter Power Ground

6 GND Control Ground (*)

CC Logic Supply Voltage

8 BD Base Darlington

9 INPUT Logic Input Cha nnel (Internal Pull Do wn)

10 FLAG Diagnostic Output Signal (Open Emitter)

TAB HVC Primary Coil Output Driver (Open Collector)

(*) Pin 6 must be connected to pins 1-5 externally

ELECTRICAL CHARACTERISTIC S (5. 3V < Vb < 24V; VCC = 5 V ± 10%; -4 0oC < Tj < 125oC;

Rcoil = 580 mΩ; Lcoil = 3.75 mH; unless otherwise specif ied; see note 1)

Sy mbol Parame ter Test Conditions Min. Typ. Max. Unit

Vcl High Voltage Clamp Icoil = 6.5 A 320 380 420 V

Vce(sat) Saturation Voltage of The

Power Stage Ic = 6.5A; Vin = 4V 1.5 2 V

ICC(stdby) Stand-by Supply Curren t IN = OFF 10 mA

ICC DC Logic Current Vb = 16 V Ic = 6.5 A f = 100 Hz

Load = Coil VCC = 5.5V 40 mA

ICC(peak) Peak DC Logic Current

During On Phase Ic = 6.5 A (see figure 1) 100 150 mA

VCC DC Logic Voltage 4.5 5.5 V

Icl Coil Current Limit -40oC < Tj < 125oC

(see note 2 and figure 1) 8.25 10 A

Ic(leak) Output leakage Current IN = OFF VHVC = 24V 0.8 mA

IC(infl) Collector Current with

Floating Input VCC = 5 V VBat = 13.5 V

RLOAD = 1KΩ; Input Floating 0.8 mA

TIc_ctr Therm al Temperature

Output Current Control OUT = ON (see figure 2) 150 (*) oC

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Sy mbol Parame ter Test Conditions Min. Typ. Max. Unit

VinH High Le vel Input Voltag e VCC = 4.5V 4 VCC V

VinL Low Level Inpu t Voltage VCC = 5.5V -0.3 0.8 V

Vin(hys) Input Threshold

Hysteresis 0.4 V

IinH High Le vel Input Curre nt Vin = 4 V 100 µA

IinL Low Level Input Current Vin = 0.8 V -100 µA

Iinpd Input Active Pull-Down Vin = 4 V 10 100 µA

VdiagH High Level Flag Output

Voltage REXT = 22 KΩ CEXT = 1 nF

(see note 3) VCC-1 VCC V

VdiagL Low Level Flag Output

Voltage REXT = 22 KΩ CEXT = 1 nF

(see note 3) 0.5 V

IdiagTH Coil Current Level

Threshold Tj = 25oC (see figure 1) 4.25 4.5 4.75 A

IdiagTD Coil Current Level

Thresh old Drift (see figure 3)

Idiag High Le vel Flag Output

Current IC > Idi agTH Vdi ag = 3 V 0.5 TBD mA

Idiag(leak) Leakage Current On Flag

Output Vin = LOW VCC = 5.5V 10 µA

VFAn tiparallel Diode

Forward Voltage Ic = -1 A 2 V

Es/b Single Pulse Avalanche

Energy L = 6 mH IC = 8 A

(see figure 4) 180 mJ

tpHL Turn-on Delay Time of

Coil Current Rc = 0.5 Ω Lc = 3.75 mH

(see figure 5) TBD µs

tpLH Turn-off Delay Time of

Coil Current Rc = 0.5 Ω Lc = 3.75 mH I c = 6.5 A

(see figure 5) TBD µs

Note 1: Parametric degradation are allowed with 5.3 < Vb < 10V and Vb > 24V.

Not e 2: The primary coil current value Icl must be measured 1ms after d esaturati on of the power stage.

Note 3: No Internal Pull-Down

(*) Internally limited

ELECTRICAL CHARACTERISTIC S (continued)

PRINC IPLE OF OPERAT ION

The VB025SP is mainly intended as a high

voltage power switch device driven by a logic

level input and interfaces directly to a high energy

electronic ignition coil.

The input Vin of the VB025SP is fed from a low

power signal generated by an external controller

that determines both dwell time and ignition point.

During Vin high (≥ 4V) the VB025SP increases

current in the coil to the desired, internally set

current level.

After reaching this level, the coil current remains

constant until the ignition point, that corresponds

to the transition of Vin from high to low (typ. 1.9V

threshold).

During the coil current switch-off, the primary

voltage HVc is clamped at an internally set value

Vcl, typic ally 380V.

The transition from saturation to desaturation, coil

current limiting phase, must have the ability to

accomodate an overvoltage. A maximum

overshoot of 20V is allowed.

FEEDBACK

When the collector current exceeds 4.5A, the

feedback signal is turned high and it remains so,

until the input voltage is turned-off .

OVERVOLTAGE

The VB025SP can withstand the following

transients of the battery line:

-100V/2 m sec (Ri = 10 Ω)

+100V/0.2msec (Ri = 10 Ω)

+50V/ 400ms ec (Ri = 4.2 Ω, with VIN = 3 V)

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FIG. 4 Single Pulse Typical Es/b CurveFig. 3 Flag Current Vers us T emperat ure

FIG. 5 Propagation Times Definit ions.

10 %

50 %

10 %

200 V

pHL pLH

INPUT

HVC

SC10930

Fig. 1 Main Waveforms During On Phase Fig. 2 Output Curre nt W avefor m After Therm a l

Prot ection Ac tiv ation

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DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374

E1 7.20 7.40 0.283 0.291

E2 7.20 7.60 0.283 0.300

E3 6.10 6.35 0.240 0.250

E4 5.90 6.10 0.232 0.240

e1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h0.50 0.002

L 1.20 1.80 0.047 0.071

q1.70 0.067

α0

DETAIL "A"

PLANE

SEATING

= =

0.10 A

E1E3

= =

DETAIL "A"

SEATING

PLANE

= =

610

0.25

= =

0068039-C

PowerSO-10 MECHANICAL DATA

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subject to change without notice. This publication supersedes and replac es all information previously supplie d. STMicroelectronics products

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