Vishay Siliconix
Si4497DY
New Product
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
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1
P-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Adaptor Switch
• High Current Load Switch
• Notebook
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)dQg (Typ.)
- 30 0.0033 at VGS = - 10 V - 36 90 nC
0.0046 at VGS = - 4.5 V - 29
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on TC = 25 °C.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 36
A
TC = 70 °C - 29
TA = 25 °C - 24.8a, b
TA = 70 °C - 19.2a, b
Pulsed Drain Current IDM - 70
Continuous Source-Drain Diode Current TC = 25 °C IS
- 6.5
TA = 25 °C - 2.9a, b
Avalanche Current L = 0.1 mH IAS - 30
Single-Pulse Avalanche Energy EAS 45 mJ
Maximum Power Dissipation
TC = 25 °C
PD
7.8
W
TC = 70 °C 5.0
TA = 25 °C 3.5a, b
TA = 70 °C 2.2a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 29 35 °C/W
Maximum Junction-to-Foot Steady State RthJF 13 16
S
S
D
D
D
S
GD
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
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Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
Vishay Siliconix
Si4497DY
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient ΔVDS/TJID = - 250 µA - 26 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ5.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 30 V, VGS = 0 V - 1 µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5
On-State Drain CurrentaID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 20 A 0.0027 0.0033 Ω
VGS = - 4.5 V, ID = - 15 A 0.0038 0.0046
Forward Transconductanceagfs VDS = - 10 V, ID = - 20 A 75 S
Dynamicb
Input Capacitance Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
9685
pFOutput Capacitance Coss 995
Reverse Transfer Capacitance Crss 995
Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 20 A 190 285
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
90 135
Gate-Source Charge Qgs 27.5
Gate-Drain Charge Qgd 26.5
Gate Resistance Rgf = 1 MHz 0.5 2.3 4.6 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
19 35
ns
Rise Time tr13 25
Turn-Off DelayTime td(off) 115 200
Fall Time tf25 50
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
100 180
Rise Time tr75 150
Turn-Off DelayTime td(off) 100 180
Fall Time tf42 80
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current ISTC = 25 °C - 36 A
Pulse Diode Forward Current ISM - 70
Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.70 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
31 60 ns
Body Diode Reverse Recovery Charge Qrr 23 45 nC
Reverse Recovery Fall Time ta13 ns
Reverse Recovery Rise Time tb18
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
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Vishay Siliconix
Si4497DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
14
28
42
56
70
0.0 0.5 1.0 1.5 2.0 2.5
VGS =10Vthru4V
VGS =3V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
0.0020
0.0025
0.0030
0.0035
0.0040
0.0045
0 1632486480
VGS =4.5V
VGS =10V
- On-Resistance (Ω)R DS(on)
ID- Drain Current (A)
0
2
4
6
8
10
0 40 80 120 160 200
VDS =20V
ID=20A
VDS =10V
VDS =15V
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
TC= 25 °C
TC= 125 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
Crss
0
2400
4800
7200
9600
12 000
0 6 12 18 24 30
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
ID=20A
VGS =4.5V
VGS =10V
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
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Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
Vishay Siliconix
Si4497DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
TJ= 25 °C
TJ= 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)I S
- 0.4
- 0.1
0.2
0.5
0.8
- 50 - 25 0 25 50 75 100 125 150
ID= 250 μA
ID=5mA
Variance (V)VGS(th)
TJ- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.004
0.008
0.012
0.016
0.020
0246810
TJ=25 °C
ID=20A
TJ= 125 °C
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
0
40
80
120
160
200
101100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
0.01
100
1
100
0.01
0.1
1ms
10 s
10 ms
0.1 1 10
10
TA= 25 °C
Single Pulse
DC
BVDSS Limited
1s
100 ms
Limited by RDS(on)*
VDS - Drain-to-Source Voltage (V)
*V
GS > minimum VGS at which RDS(on) is specied
- Drain Current (A)
ID
Vishay Siliconix
Si4497DY
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
8
16
24
32
40
0 255075100125150
TC- Case Temperature (°C)
ID- Drain Current (A)
Power Derating, Junction-to-Foot
0
2
4
6
8
10
0 25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
TA- Ambient Temperature (°C)
Power (W)
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Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
Vishay Siliconix
Si4497DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65748.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-2 000101110-1
10-3 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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