M1FS4
40V 1.33A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Case :M1F
FEATURES
APPLICATION
Small SMT
Tj150
Low VF=0.45V
PRRSM avalanche guaranteed
Switching power supply
DC/DC converter
Home Appliances, Office Equipment
Telecommuniction
Single
Schottky Rectifiers (SBD)
Absolute Maximum Ratings (If not specified Tl=25)
Item Symbol Conditions
Ratings
Unit
Storage Temperature Tstg
-55`150
Operating Junction Temperature Tj150
Maximum Reverse Voltage
V
RM
40 V
Repetitive Peak Surge Reverse Voltage
V
RRSM
Pulse width 0.5ms, duty 1/40 45 V
Average Rectified Forward Current I
O
50Hz sine wave, R-load Ta=25@ On alumina substrate 1.33 A
50Hz sine wave, R-load Ta=25@ On glass-epoxy substrate 0.87
Peak Surge Forward Current
I
FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=2530 A
Repetitive Peak Surge Reverse Power PRRSM Pulse width 10Ês, Tj=2560 W
Electrical Characteristics (If not specified Tl=25)
Item Symbol Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=1.1A, Pulse measurement
Max.0.55
V
Reverse Current
I
RV
R
=VRM, Pulse measurement Max.0.8 mA
Junction Capacitance
Cj
f=1MHz, VR=10V Typ.50 pF
Æjl
junction to lead Max.20
Thermal Resistance
Æja
junction to ambient@On alumina substrate Max.108 /W
junction to ambient@On glass-epoxy substrate Max.186
Forward Voltage
00.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.1
1
10
M1FS4
Tl=150°C [MAX]
Tl=25°C [MAX]
Pulse measurement per diode
Tl=150°C [TYP]
Tl=25°C [TYP]
Forward Voltage VF [V]
Forward Current IF [A]
10
100
M1FS4
0.1 1 10
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Reverse Voltage VR [V]
Junction Capacitance Cj [pF]
f=1MHz
Tl=25°C
TYP
Junction Capacitance
Reverse Current
0.01
0.1
1
10
100
1000
010 20 30 40 50 60
M1FS4
Tl=150°C [MAX]
Tl=150°C [TYP]
Pulse measurement per diode
Tl=125°C [TYP]
Tl=100°C [TYP]
Tl=75°C [TYP]
Reverse Voltage VR [V]
Reverse Current IR [mA]
0
0.5
1
1.5
2
010 20 30 40 50
M1FS4
0.3
Reverse Power Dissipation
Tj = 150°C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
Reverse Voltage VR [V]
Reverse Power Dissipation PR [W]
0
tp
VR
T
D=tp/T
0tp
IO
T
D=tp/T
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.5 1 1.5 2 2.5
M1FS4
0.3
Forward Power Dissipation
Tj = 150°C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current IO [A]
Forward Power Dissipation PF [W]
0
tp
IO
TD=tp/T
0 20 40 60 80 100 120 140 160
0
0.4
0.8
1.2
1.6
2
2.4
M1FS4
0.3
De rating Curv e
VR = 20V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0VR
Ambient Temper ature Ta [°C]
Average Rectified F or ward Current IO [A]
Alumina substrate
S older ing land 2mm×2mm
Conduc tor layer 20µm
S ubst r ate t hic k ness 0. 64mm
0
tp
IO
TD=tp/T
0 20 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
M1FS4
0.3
De rating Curv e
VR = 20V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0VR
Ambient Temper ature Ta [°C]
Average Rectified F or war d Current IO [A]
Glass- epoxy substr at e
S older ing land 2mm×2mm
Conduc tor layer 35µm
Peak Surge Forward Capability
0
10
20
30
40
50
1 10 100
M1FS4
2 5 20 50
IFSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current IFSM
[A]
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
tp
IRP
0
VR
0.5IRP VRP
IR
PRRSM = IRP × VRP
0
20
40
60
80
100
120
050 100 150
SBD Repetitive Surge Reverse Power Derating Curve
Junction Temperature Tj [°C]
PRRSM
Derating [%]
0.1
1
10
1 10 100
SBD Repetitive Surge Reverse Power Capability
Pulse Width tp [µs]
PRRSM
(tp) / PRRSM
(tp=10µs) Ratio
tp
IRP
0
VR
0.5IRP VRP
IR
PRRSM = IRP × VRP
