MMBT2907A
PNP General
Purpose Amplifier
SOT-23
Suggested Solder
Pad Layout
Features
• Surface Mount SOT-23 Package
• Capable of 350mWatts of Power Dissipation
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0) 60 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0) 60 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0) 5.0 Vdc
IBL Base Cutoff Current
(VCE=30Vdc, V BE=0.5Vdc) 50 nAdc
ICEX Collector Cutoff Current
(VCE=30Vdc, V BE=0.5Vdc) 50 nAdc
ICBO Collector Cutoff Current
(VCB=50Vdc, IE=0)
(VCB=50Vdc, IE=0, TA=150°C) 0.1
10.0 µAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=500mAdc, VCE=10Vdc)
75
100
100
100 300
50
VCE(sat) Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc) 0.4
1.6 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc) 1.3
2.6 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTCurrent Gain-Bandwidth Product
(IC=50mAdc, VCE=20Vdc, f=100MHz) 200 MHz
CcboOutput Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) 8.0 pF
Cibo Input Capacitance
(VEB=2.0Vdc, IC=0, f=1.0MHz) 30.0 pF
SWITCHING CHARACTERISTICS
td Delay Time (VCC=3.0Vdc, IC=150mAdc, 10 ns
tr Rise Time IB1=15mAdc) 40 ns
ts Storage Time (VCC=3.0Vdc, IC=150mAdc 80 ns
tf Fall Time IB1=IB2=15mAdc) 30 ns
*Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
2 F
C
B E
Pin Configuration
Top View
K
A
B
C
D
E
F
G
H
J
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omponents
21201 Itasca Street Chatsworth
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MCC
MMBT2907A
DC Current Gain vs Collector Current
hFE
IC (mA)
50
100
150
200
250
300
0.1 110 100
Base-Emitter ON Voltage vs
Collector Current
VBE(ON) - (V)
IC - (mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1.0 10 100
Pulsed Base Saturation
Volatge vs Collector Current Pulsed Collector Saturation
Voltage vs Collector Current
VBE(SAT) - (V) VCE(SAT) - (V)
0
-0.5
-0.7
-0.9
-1.1
-1.3
-1.5
-1.0 -10 -100 -1000 -.02
-.05
-.1
-.5
-1.0 -10 -100
-1000
IC - (mA) IC - (mA)
Collector Reverse Current vs
Reverse Bias Voltage Input and Output Capacitances vs
Reverse Bias Voltage
ICES - (µA)
VCE - (V) Volts - (V)
pF
1.0
10
100
100
0
0-10 -20 -30 -40 -50 -60
TA = 25°C
0
4
8
12
16
20
-0.1 -1.0 -10
COBO
CIBO
TA = 25°C
IC/IB = 10 IC/IB = 10
VCE = 10V VCE = 5.0V
TA = 25°C
TA = 100°C
MCC
www.mccsemi.com
MMBT2907A
Maximum Power Dissipation vs
Ambient Temperature
PD(MAX) - (mW)
TA - (°C)
TO-92
SOT-23
0
200
400
600
800
050 100 150 200
Contours of Constant Gain
Bandwidth Product (fT)
VCE - (V)
IC - (mA)
0
-.4
-.8
-1.0
-4
-8
-10
-0.1
-1.0 -10
-100
Turn On and Turn Off Times vs
Collector Current
IC - (mA)
T - (ns)
1.0
10
100
1000
10 100 1000
IB1 = IB2 = IC/10
VCC(OFF) = 15V
toff
ton
*25MHz increments from 50
to 200MHz
Switching Times vs
Collector Current
T - (ns)
IC - (mA)
1.0
10
100
1000
10
100
1000
IB1 = IB2 = IC/10
ts
t
f
t
r
td
MCC
www.mccsemi.com
