PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 1 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
Specification Status: RELEASED
GENERAL DESCRIPTION
Littelfuse Circuit Protection PolyZen devices
are polymer enhanced, precision Zener
diode micro-assemblies. They offer
resettable protection against multi-Watt fault
events without the need for multi-Watt heat
sinks.
The Zener diode used for voltage clamping
in a PolyZen micro-assembly was selected
due to its relatively flat voltage vs current response. This helps
improve output voltage clamping, even when input voltage is
high and diode currents are large.
An advanced feature of the PolyZen micro-assembly is that the
Zener diode is thermally coupled to a resistively non-linear,
polymer PTC (positive temperature coefficient) layer. This PTC
layer is fully integrated into the device, and is electrically in
series between VIN and the diode clamped VOUT.
This advanced PTC layer responds to either extended diode
heating or overcurrent events by transitioning from a low to high
resistance state, also known as” tripping”. A tripped PTC will
limit current and generate voltage drop. It helps to protect both
the Zener diode and the follow on electronics and effectively
increases the diode’s power handling capability.
The polymer enhanced Zener diode helps protect sensitive
portable electronics from damage caused by inductive voltage
spikes, voltage transients, incorrect power supplies and reverse
bias. These devices are particularly suitable for portable
electronics and other low-power DC devices.
BENEFITS
Stable Zener diode helps shield downstream
electronics from overvoltage and reverse
bias
Trip events shut out overvoltage and reverse
bias sources
Analog nature of trip events minimizes
upstream inductive spikes
Minimal power dissipation requirements
Single component placement
FEATURES
Overvoltage transient suppression
Stable VZ vs fault current
Time delayed, overvoltage trip
Time delayed, reverse bias trip
Multi-Watt power handling capability
Integrated device construction
RoHS Compliant
TARGET APPLICATIONS
DC power port protection in portable
electronics
DC power port protection for systems using
barrel jacks for power input
Internal overvoltage & transient suppression
DC output voltage regulation
TYPICAL APPLICATION BLOCK DIAGRAM
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
PolyZen
Device
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
PolyZen
Device
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 2 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
CONFIGURATION INFORMATION
Pad Dimensions
PIN DESCRIPTION
Pin Number
Pin Name
Pin Function
1
VIN
VIN. Protected input to Zener diode.
2
GND
GND
3
VOUT
VOUT. Zener regulated voltage output
BLOCK DIAGRAM
DEFINITION of TERMS
IPTC
Current flowing through the PTC portion of
the circuit
IFLT
RMS fault current flowing through the diode
IOUT
Current flowing out the VOUT pin of the device
Trip Event
A condition where the PTC transitions to a
high resistance state, thereby significantly
limiting IPTC and related currents.
Trip
Endurance
Time the PTC portion of the device remains in
a high resistance state.
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”)2.88 mm
(0.1135”)0.56 mm
(0.022”)
0.94 mm
(0.037”)
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”)2.88 mm
(0.1135”)0.56 mm
(0.022”)
0.94 mm
(0.037”)
2
3
VIN
GND
VOUT
1
2
3
VIN
GND
VOUT
1
GND
IFLT
VIN
IOUT
IPTC, IHOLD
VOUT
GND
IFLT
VIN
IOUT
IPTC, IHOLD
VOUT
GND
VIN
VOUT
Zener
Diode
Polymer PTC
GND
VIN
VOUT
Zener
Diode
Polymer PTC
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 3 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
GENERAL SPECIFICATIONS
Operating Temperature
-40º to +85ºC
Storage Temperature
-40º to +85ºC
ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)
Min Typ Max
Test
Voltage
(V)
Max
Current
(mA)
VINT Max
(V)
Test
Current
(A)
IFLT Max
(A)
Test
Voltage
(V)
Power
(W)
Test
Voltage
(V)
13.20 13.40 13.65 0.1 13.15 5.0 0.28 0.45 48 3
+2
-40
+48
-16
0.8
48
VInt Max8
IFLT Max9
Tripped Power
Dissipation10
0.75
VZ4
(V)
Izt4
(A)
IHOLD5
(A)
@ 20oC
Leakage Current
RTyp6
(Ohms)
R1Max7
(Ohms)
Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.
Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can
degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors
including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings
specific to your application contact Littelfuse Circuit Protection directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards.
Performance in your application may vary.
Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.
Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a
trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is
sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature.
Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after
reflow soldering.
Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is
defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least
100 trip cycles and 24 hours’ trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is
conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating.
Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a
fault condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per
lot from 3 lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion
of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is
defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the
direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on Littelfuse test boards (see note
3).
Note 11: Specifications based on limited qualification data and subject to change.
MECHANICAL DIMMENSIONS
Min
Typical
Max
Length
L
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Width
W
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Height
H
1.4mm
(0.055”)
1.7 mm
(0.067”)
2.0 mm
(0.081”)
Length
Diode
Ld
-
3.0 mm
(0.118”)
-
Height
Diode
Hd
-
1.0 mm
(0.039”)
-
Offset
O1
-
0.6 mm
(0.024”)
-
Offset
O2
-
0.7 mm
(0.028”)
-
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 4 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
SOLDER REFLOW RECOMMENDATIONS
Classification Reflow Profiles
Profile Feature
Pb-Free Assembly
Average Ramp-Up Rate (Tsmax to Tp)
3° C/second max.
Preheat
• Temperature Min (Tsmin)
150 °C
• Temperature Max (Tsmax)
200 °C
• Time (tsmin to tsmax)
60-180 seconds
Time maintained above:
• Temperature (TL)
217 °C
• Time (tL)
60-150 seconds
PACKAGING
Packaging
Tape & Reel
Standard Box
ZENXXXVXXXAXXLS
3,000
15,000
REEL DIMENSIONS
Amax = 330
Nmin = 102
W1 = 8.4
W2 = 11.1
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 5 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
TAPED COMPONENT DIMENSIONS
Matte Finish These Area
Amax
Nmin
Matte Finish These Area
Amax
Nmin
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 6 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
TYPICAL CHARACTERISTICS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 7 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 8 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
MATERIALS INFORMATION
ROHS Compliant ELV Compliant Halogen Free*
* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm.
HF
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT : ZEN132V075A48LS
DOCUMENT : SCD27364
REV LETTER : D
REV DATE: JULY 26, 2016
PAGE NO.: 9 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving,
life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired
operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation.
Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall
not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse
documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse.