TELECOMMUNICATION SYSTEM 50 A 10/1000 OVERVOLTAGE PROTECTORS
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 2000 Texas Instruments Incorporated
1
PRODUCTION DATA information is current as of
publication date. Products conform to specifications
per the terms of Texas Instruments standard warranty.
Production processing does not necessary include
testing of all parameters.
NOVEMBER 1997 - REVISED OCTOBER 2000
Designed and manufactured by Power
Innovations, A Bourns Company, under
private label for Texas Instruments.
●
●●
●4 kV 10/700, 100 A 5/310 ITU-T K.20/21 rating
●
●●
●Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
●
●●
●Rated for International Surge Wave Shapes
DEVICE
VDRM
V
V(BO)
V
‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4115 90 115
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4220 160 220
‘4240 180 240
‘4250 190 250
‘4265 200 265
‘4290 220 290
‘4300 230 300
‘4350 275 350
‘4395 320 395
‘4400 300 400
WAVE SHAPE STANDARD ITSP
A
2/10 µs GR-1089-CORE 300
8/20 µs IEC 61000-4-5 220
10/160 µs FCC Part 68 120
10/700 µs ITU-T K.20/21 100
10/560 µs FCC Part 68 75
10/1000 µs GR-1089-CORE 50
●
●●
●Low Differential Capacitance . . . 43 pF max.
●
●●
●.................UL Recognized Component.
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
HOW TO ORDER
DEVICE PACKAGE CARRIER ORDER AS
TISP4xxxM3BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled TISP4xxxM3BJR
Bulk Pack TISP4xxxM3BJ
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etcetera.
device symbol
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
12
T(A)R(B)
SMBJ PACKAGE
(TOP VIEW)
MDXXBG
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
2
NOVEMBER 1997 - REVISED OCTOBER 2000
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
The TISP4xxxM3BJ range consists of eighteen voltage variants to meet various maximum system voltage
levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ
(JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and
holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A
10/1000 TISP4xxxH3BJ series is available.
absolute maximum ratings, TA = 25 °C (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
VDRM
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±320
±300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 300
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 120
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 110
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 100
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 100
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 100
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 75
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially the TISP4xxxM3BJ must be in thermal equilibrium with TJ=25°C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
3
NOVEMBER 1997 - REVISED OCTOBER 2000
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
30
32
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A diT/dt 300 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 2. Initially the TISP4xxxM3BJ must be in thermal equilibrium with TJ=25°C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
electrical characteristics, TA = 25 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak off-
state current VD = VDRM
TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
V
absolute maximum ratings, TA = 25 °C (unless otherwise noted) (Continued)
RATING SYMBOL VALUE UNIT
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
4
NOVEMBER 1997 - REVISED OCTOBER 2000
V(BO)
Impulse breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±78
±88
±102
±122
±132
±151
±171
±186
±207
±227
±247
±257
±272
±298
±308
±359
±405
±410
V
I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE = 300 Ω±0.15 ±0.6 A
VTOn-state voltage IT=±5A, t
W= 100 µs ±3 V
IHHolding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 ±0.6 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5 kV/µs
IDOff-state current VD=±50V T
A = 85 °C ±10 µA
Coff Off-state capacitance
f = 100 kHz, Vd=1V rms, V
D=0,
f = 100 kHz, Vd=1V rms, V
D=-1V
f = 100 kHz, Vd=1V rms, V
D=-2V
f = 100 kHz, Vd=1V rms, V
D=-50V
f = 100 kHz, Vd=1V rms, V
D= -100 V
(see Note 6)
4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
86
60
54
80
56
50
74
52
46
36
26
20
20
16
110
80
70
96
74
64
90
70
60
47
36
30
30
24
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.
thermal characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7) 115
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C 52
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
electrical characteristics, TA = 25 °C (unless otherwise noted) (Continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
5
NOVEMBER 1997 - REVISED OCTOBER 2000
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
-v
VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAB
VDRM
IDRM
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
6
NOVEMBER 1997 - REVISED OCTOBER 2000
TYPICAL CHARACTERISTICS
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TCMAG
VD = ±50 V
NORMALISED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakover Voltage
0.95
1.00
1.05
1.10 TC4MAF
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
VT - On-State Voltage - V
0.7 1.5 2 3 4 5 7110
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
1
10
100
TA = 25 °C
tW = 100 µs
TC4MACA
'4240
THRU
'4400
'4125
THRU
'4200
'4070
THRU
'4115
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4MAD
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
7
NOVEMBER 1997 - REVISED OCTOBER 2000
TYPICAL CHARACTERISTICS
Figure 6. Figure 7.
NORMALISED CAPACITANCE
vs
OFF-STATE VOLTAGE
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalised to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25°C
Vd = 1 Vrms
TC4MABA
'4240 THRU '4400
'4125 THRU '4200
'4070 THRU '4115
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
VDRM - Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300100
∆
∆∆
∆C - Differential Off-State Capacitance - pF
25
30
35
40
45
50
∆
∆∆
∆C = Coff(-2 V) - Coff(-50 V)
TC4MAEA
'4070
'4080
'4095
'4125
'4145
'4165
'4180
'4265
'4300
'4350
'4400
'4200
'4240
'4115
'4220
'4250
'4290
'4395
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
8
NOVEMBER 1997 - REVISED OCTOBER 2000
RATING AND THERMAL INFORMATION
Figure 8. Figure 9.
Figure 10. Figure 11.
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4MAC
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
THERMAL IMPEDANCE
vs
POWER DURATION
t - Power Duration - s
0·1 1 10 100 1000
Zθ
θθ
θJA(t) - Transient Thermal Impedance - °C/W
4
5
6
7
8
9
15
20
30
40
50
60
70
80
90
150
10
100
TI4MAE
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4MADA
'4125 THRU '4200
'4240 THRU '4400
'4070 THRU '4115
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TA - Ambient Temperature - °C
-40-30-20-100 1020304050607080
Impulse Current - A
40
50
60
70
80
90
100
120
150
200
250
300
400
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4MAA
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
9
NOVEMBER 1997 - REVISED OCTOBER 2000
APPLICATIONS INFORMATION
deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage
between two conductors (Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13).
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This
configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 13,
protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the ±V(BO) of the
individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)
value. If the equipment being protected has all its vulnerable components connected between the conductors
and ground, then protector Th1 is not required.
impulse testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested
with various impulse wave forms. The table below shows some common values.
If the impulse generator current exceeds the protectors current rating then a series resistance can be used to
reduce the current to the protectors rated value and so prevent possible failure. The required value of series
resistance for a given waveform is given by the following calculations. First, the minimum total circuit
impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The
impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then
subtracted from the minimum total circuit impedance to give the required value of series resistance.
For the FCC Part 68 10/560 waveform the following values result. The minimum total circuit impedance is
800/75 = 10.7 Ω and the generators fictive impedance is 800/100 = 8 Ω. This gives a minimum series
resistance value of 10.7 - 8 = 2.7 Ω. After allowing for tolerance, a 3 Ω ±10% resistor would be suitable. The
10/160 waveform needs a standard resistor value of 5.6 Ω per conductor. These would be R1a and R1b in
Figure 12. TWO POINT PROTECTION Figure 13. MULTI-POINT PROTECTION
STANDARD
PEAK VOLTAGE
SETTING
V
VOLTAGE
WAVE FORM
µs
PEAK CURRENT
VALUE
A
CURRENT
WAVE FORM
µs
TISP4xxxM3
25 °C RATING
A
SERIES
RESISTANCE
Ω
GR-1089-CORE 2500 2/10 500 2/10 300 11
1000 10/1000 100 10/1000 50
FCC Part 68
(March 1998)
1500 10/160 200 10/160 120 2x5.6
800 10/560 100 10/560 75 3
1500 9/720 † 37.5 5/320 † 100 0
1000 9/720 † 25 5/320 † 100 0
I3124 1500 0.5/700 37.5 0.2/310 100 0
ITU-T K.20/K.21 1500
4000 10/700 37.5
100 5/310 100 0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
Th1
Th3
Th2
Th1
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
10
NOVEMBER 1997 - REVISED OCTOBER 2000
Figure 15 and Figure 16. FCC Part 68 allows the equipment to be non-operational after the 10/160 (conductor
to ground) and 10/560 (inter-conductor) impulses. The series resistor value may be reduced to zero to pass
FCC Part 68 in a non-operational mode e.g. Figure 14. In some cases the equipment will require verification
over a temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor
value can be calculated for ambient temperatures in the range of -40 °C to 85 °C.
a.c. power testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that
exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive
Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used
to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In
some cases it may be necessary to add some extra series resistance to prevent the fuse opening during
impulse testing. The current versus time characteristic of the overcurrent protector must be below the line
shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL
1459 wiring simulator failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V,
-2 V and -50 V. Where possible values are also given for -100 V. Values for other voltages may be calculated
by multiplying the VD= 0 capacitance value by the factor given in Figure 6. Up to 10 MHz the capacitance is
essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on
connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias
voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by
biasing one protector at -2 V and the other at -50 V.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual
conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this
condition about 10 V of clipping is normally possible without activating the ring trip circuit.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated
value should not be less than the maximum normal system voltages. The TISP4265M3BJ, with a VDRM of
200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of
-58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the
open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the
extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This
level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C
value. Figure 10 shows that this condition will occur at an ambient temperature of -28 °C. In this example, the
TISP4265M3BJ will allow normal equipment operation provided that the minimum expected ambient
temperature does not fall below -28 °C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51
standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3)
cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the
standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller
than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal
conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority
of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than
indicated by the JESD51 values.
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
11
NOVEMBER 1997 - REVISED OCTOBER 2000
typical circuits
Figure 14. MODEM INTER-WIRE PROTECTION Figure 15. PROTECTION MODULE
Figure 16. ISDN PROTECTION
Figure 17. LINE CARD RING/TEST PROTECTION
FUSE
TISP4350
AI6XBMA
RING DETECTOR
HOOK SWITCH
D.C. SINK
SIGNAL
MODEM
RING
TIP
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
PROTECTED
EQUIPMENT
E.G. LINE CARD
AI6XBK
R1a
R1b
Th3
Th2
Th1
AI6XBL
SIGNAL
D.C.
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
Th4
Th5
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
S3a
S3b
VBAT
C1
220 nF
AI6XBJ
TISP6xxxx,
TISPPBLx,
½TISP6NTP2
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
12
NOVEMBER 1997 - REVISED OCTOBER 2000
MECHANICAL DATA
SMBJ (DO-214AA)
plastic surface mount diode package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SMB
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBHA
5,59
5,21
2,40
2,00
2,10
1,90
1,52
0,76
4,57
4,06
3,94
3,30 2
Index
Mark
(if needed)
2,32
1,96
0,20
0,10
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
13
NOVEMBER 1997 - REVISED OCTOBER 2000
MECHANICAL DATA
recommended printed wiring footprint.
device symbolization code
Devices will be coded as below As the device parameters are symmetrical, terminal 1 is not identified.
carrier information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the
customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be
embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
DEVICE SYMBOLIZATION
CODE
TISP4070M3BJ 4070M3
TISP4080M3BJ 4080M3
TISP4095M3BJ 4095M3
TISP4115M3BJ 4115M3
TISP4125M3BJ 4125M3
TISP4145M3BJ 4145M3
TISP4165M3BJ 4165M3
TISP4180M3BJ 4180M3
TISP4200M3BJ 4200M3
TISP4220M3BJ 4220M3
TISP4240M3BJ 4240M3
TISP4250M3BJ 4250M3
TISP4265M3BJ 4265M3
TISP4290M3BJ 4290M3
TISP4300M3BJ 4300M3
TISP4350M3BJ 4350M3
TISP4395M3BJ 4395M3
TISP4400M3BJ 4400M3
CARRIER ORDER #
Embossed Tape Reel Pack TISP4xxxM3BJR
Bulk Pack TISP4xxxM3BJ
SMB Pad Size
ALL LINEAR DIMENSIONS IN MILLIMETERS
2.40
2.16
2.54
MDXXBI
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
14
NOVEMBER 1997 - REVISED OCTOBER 2000
MECHANICAL DATA
tape dimensions
SMB Package Single-Sprocket Tape
ALL LINEAR DIMENSIONS IN MILLIMETERS
Direction of Feed
0,40 MAX.
4,5 MAX.
0 MIN.
12,30
11,70
1,65
1,55
4,10
3,90
2,05
1,95
ø 1,5 MIN.
7,90
8,10
Embossment
Carrier Tape
5,55
5,45
1,85
1,65
Cover
Tape
8,20
MAX.
NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the
component cannot rotate more than 20° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter: 330 ±3,0 mm
Reel hub diameter 75 mm MIN.
Reel axial hole: 13,0 ±0,5 mm
C.
3000 devices are on a reel.
MDXXBJ
20°
Typical component
cavity centre line
Maximium component
rotation
Typical component
centre line
Index
Mark
(if needed)
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
15
NOVEMBER 1997 - REVISED OCTOBER 2000
IMPORTANT NOTICE
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