IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOSTM 1) Power MOSFET ID25 = 35 A VDSS = 600 V RDS(on) max = 0.1 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol Conditions VDSS TVJ = 25C Maximum Ratings VGS ID25 ID90 TC = 25C TC = 90C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25C 600 V 20 V 35 25 A A 800 1.2 mJ mJ 50 V/ns Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 90 100 3 3.9 V 10 A A RDSon VGS = 10 V; ID = 18 A VGS(th) VDS = VGS; ID = 1.2 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 18 A 60 14 20 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 18 A; RG = 3.3 10 5 tbd 5 2.1 TVJ = 25C TVJ = 125C tbd 100 2800 130 RthJC IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved m nA * fast CoolMOSTM 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness * Enhanced total power density Applications * Switched mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Power factor correction (PFC) * Welding * Inductive heating * PDP and LCD adapter 1) CoolMOSTM is a trademark of Infineon Technologies AG. pF pF 70 ns ns ns ns ns ns ns 0.35 K/W 20080523a 1-4 Advanced Technical Information IXKH 35N60C5 IXKP 35N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 18 A; VGS = 0 V 0.9 trr QRM IRM IF = 18 A; -diF/dt = 100 A/s; VR = 400 V 450 12 70 max. 18 A 1.2 V ns C A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings TO-247 TO-220 with heatsink compound Weight TO-247 TO-220 0.8 ... 1.2 0.4 ... 0.6 Nm Nm TO-247 TO-220 typ. max. 0.25 0.50 K/W K/W 6 2 g g IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved C C Characteristic Values min. RthCH -40...+150 -40...+150 20080523a 2-4 IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information TO-247 AD Outline Symbol Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 OP1 TO-220 AB Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 M C B E D F N A H G J Q K R L 120 400 50 10 V TJ = 25C VGS = 20 V 105 Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 7V 8V TJ = 150C 8V 10 V VGS = 20 V 6V 5.5 V 40 90 300 7V 200 30 60 I D [A ] I D [A ] Ptot [ W] 75 6V 5V 20 45 5.5 V 4.5 V 30 100 5V 10 15 4.5 V 0 0 0 40 80 120 TC [C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved DS 15 20 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20080523a 3-4 IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information 160 0.3 0.5 TJV = 150C ID = 18 A VGS = 10 V 0.25 5.5 V 0.4 VDS > 2*RDS(on) max * ID 25 C 120 6.5 V 0.2 [] 5V 20 V DS (on) 0.15 0.2 80 98 % R R DS (on) [] 7V VDS = 0.3 I D [A ] 6V TJ =150 C typ 0.1 40 0.1 0.05 0 0 0 0 10 20 30 40 -60 50 -20 20 60 140 0 180 Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 2 12 25 C, 98% 10 10 4 VDS = 120 V Ciss 1 20 V 8 10 3 10 2 10 1 C [pF ] 6 V GS I F [A ] [V ] 40 0V 0 10 VGS = 0 V f = 1 MHz 10 1 8 5 ID = 18 A pulsed TJ =150 C 6 [V] GS Fig. 6 Typ. transfer characteristics Fig. 5 Drain-source on-state resistance 150 C, 98% 10 4 V 25 C 10 2 T j [C] I D [A] 10 100 Coss 4 2 Crss 10 -1 10 0 0 0.5 1 V SD 1.5 2 0 10 20 30 Q [V] Fig. 7 Forward characteristic of reverse diode Fig. 8 1000 gate 40 50 0 50 100 [nC] V Typ. gate charge DS 150 200 [V] Fig. 9 Typ. capacitances 700 10 ID = 11 A 0 60 0 ID = 0.25 mA 0.5 750 660 620 V 250 0.2 -1 Z thJ C [ K /W ] [V ] B R (DS S ) 500 E AS [m J ] 10 0.1 D = tp/T 0.05 0.02 10 -2 10 -3 0.01 single pulse 580 0 540 20 60 100 140 T j [C] Fig. 10 Avalanche energy 180 -60 -20 20 60 140 180 T j [C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 100 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20080523a 4-4