© 2008 IXYS All rights reserved 1 - 4
20080523a
IXKH 35N60C5
IXKP 35N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
RDSon VGS = 10 V; ID = 18 A 90 100 mΩ
VGS(th) VDS = VGS; ID = 1.2 mA 2.1 3 3.9 V
IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C
TVJ = 125°C tbd
10 µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 100 nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
2800
130
pF
pF
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 18 A
60
14
20
70 ns
ns
ns
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 400 V
ID = 18 A; RG = 3.3 Ω
10
5
tbd
5
ns
ns
ns
ns
RthJC 0.35 K/W
ID25 = 35 A
VDSS = 600 V
RDS(on) max = 0.1 Ω
CoolMOS™ 1) Power MOSFET
Features
• fast CoolMOS™ 1) power MOSFET
4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
MOSFET
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C 600 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
35
25
A
A
EAS
EAR
single pulse
repetitive
800
1.2
mJ
mJ
dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns
D
G
S
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
ID = 11 A; TC = 25°C
1) CoolMOS™ is a trademark of
Infi neon Technologies AG.
TO-220 AB (IXKP)
G
D
S
TO-247 AD (IXKH)
G
D
S
q D(TAB)
© 2008 IXYS All rights reserved 2 - 4
20080523a
IXKH 35N60C5
IXKP 35N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
ISVGS = 0 V 18 A
VSD IF = 18 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 18 A; -diF/dt = 100 A/µs; VR = 400 V
450
12
70
ns
µC
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating -40...+150
-40...+150
°C
°C
Mdmounting torque TO-247
TO-220
0.8 ... 1.2
0.4 ... 0.6
Nm
Nm
Symbol Conditions Characteristic Values
min. typ. max.
RthCH with heatsink compound TO-247
TO-220
0.25
0.50
K/W
K/W
Weight TO-247
TO-220
6
2
g
g
© 2008 IXYS All rights reserved 3 - 4
20080523a
IXKH 35N60C5
IXKP 35N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
G
C
D
F
B
H
A
JK
L
Q
R
E
N
M
TO-220 AB Outline
Fig. 1 Power dissipation Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics
04080120160
0
100
200
300
400
TC [°C]
Ptot [W]
TO-247 AD Outline
4.5 V
5V
5.5 V
6V
7V
8V
10 V
20 V
0
10
20
30
40
50
0 5 10 15 20
VDS [V]
ID]A
[
4.5 V
5V
5.5 V
6V
7V
8V
10 V
20 V
0
15
30
45
60
75
90
105
120
05101520
V
DS
[V]
I
D
]
A
[
T
J
= 25°C
V
GS
=
V
GS
=
T
J
= 150°C
Symbol Inches Millimeters
min max min max
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
ØP1 - 0.291 - 7.39
© 2008 IXYS All rights reserved 4 - 4
20080523a
IXKH 35N60C5
IXKP 35N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
CJht
]W/K[
540
580
620
660
700
-60 -20 20 60 100 140 180
T
j
[°C]
V
)
S
SD(R
B
]
V
[
0
250
500
750
1000
20 60 100 140 180
T
j
[°C]
E
SA
]
Jm
[
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
10
0
050100150200
V
DS
[V]
C]Fp[
120V
40 0V
0
2
4
6
8
10
12
0 102030405060
Q
gate
[nC]
V
SG
]
V[
25 °C
150 °C
0
40
80
120
160
02 4 6 810
V
GS
[V]
I
D
]
A
[
typ
98 %
0
0.05
0.1
0.15
0.2
0.25
0.3
-60 -20 20 60 100 140 180
T
j
[°C]
R
)
n
o(SD
[Ω]
5V
5.5 V
6V6.5 V
7V
20 V
0
0.1
0.2
0.3
0.4
0.5
0 1020304050
I
D
[A]
R
)no(SD
[Ω]
V
DS
=
T
JV
= 150°C I
D
= 18 A
V
GS
= 10 V
V
DS
> 2·R
DS(on) max
· I
D
T
J
=
T
J
= V
DS
= 120 V
V
GS
= 0 V
f = 1 MHz
I
D
= 11 A I
D
= 0.25 mA
D
= t
p
/T
I
D
= 18 A pulsed
Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
Fig. 12 Max. transient thermal
impedance