Ordering number : ENN2041B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Application Package Dimensions unit:mm 2042B [2SB1144/2SD1684] 8.0 4.0 1.0 1.0 3.3 1.4 * Adoption of FBET and MBIT processes. * High breakdown voltage. * Large current capacity. * Low saturation voltage. * Plastic-covered heat sink facilitating high-density mounting. 1.5 7.5 3.0 11.0 Features 15.5 3.0 1.6 0.8 0.8 0.7 0.75 1 ( ) : 2SB1144 2 3 1.7 2.4 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML 4.8 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol Conditions Ratings Unit VCBO VCEO (-)120 (-)100 V VEBO IC (-)6 V (-)1.5 A ICP (-)2.0 A 1.5 W 10 150 W C -55 to +150 C Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V Electrical Characteristics at Ta = 25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 DC Current Gain Gain-Bandwidth Product min typ VCB=(-)100V, IE=0 VEB=(-)4V, IC=0 hFE2 VCE=(-)5V, IC=(-)100mA VCE=(-)5V, IC=(-)1A fT VCE=(-)10V, IC=(-)50mA * : The 2SB1144/2SD1684 are classified by 100mA hFE as follows : (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings Conditions 100* Unit (-)100 nA (-)100 nA 400* 30 Rank R S T hFE 100 to 200 140 to 280 200 to 400 www.onsemi.com max (100) MHz 120 MHz Continued on next page. Publication Order Number: 2SB1144_2SD1684/D 2SB1144/2SD1684 Continued from preceding page. Parameter Symbol Output Capacitance Cob Collector-to-Emitter Saturation Voltage Unit max Collector-to-Emitter Breakdown Voltage V(BR)EBO pF (-180) (-500) mV 100 300 mV (-)0.85 (-)1.2 IC=(-)500mA, IB=(-)50mA Emitter-to-Base Breakdown Voltage V (-)100 V (-)6 ton See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit V (-)120 IE=(-)10A, IC=0 Turn-ON Time Fall Time typ (18)11 VBE(sat) IC=(-)500mA, IB=(-)50mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Collector-to-Base Breakdown Voltage min VCB=(-)10V, f=1MHz VCE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions V (80)80 ns 1000 ns (750) ns (40)50 ns Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 RB VR RL 100 50 + 470F + 100F VBE= --5V VCC=50V IC=10IB1= --10IB2=500mA IC -- VCE --1.6 IC -- VCE 1.6 2SB1144 2SD1684 50mA 40mA 30mA A A m --50 --1.2 Collector Current, IC - A Collector Current, IC - A m --40 mA --30 A --20m A --10m --0.8 --5mA --3mA --2mA --0.4 1.2 20mA 10mA 0.8 5mA 3mA 2mA 0.4 --1mA IB=0 0 0 --1 --2 --3 --4 0 Collector Current, IC - A --0.6 --3mA --2mA --0.4 --1mA --0.2 IB=0 0 --10 --20 --30 0.8 5mA 4mA 0.6 3mA 2mA 0.4 1mA IB=0 0 --40 Collector-to-Emitter Voltage, VCE - V --50 5 ITR09064 2SD1684 0.2 0 4 A 6m A --4mA 3 IC -- VCE --6m --5mA --0.8 2 1.0 2SB1144 A --7m 1 Collector-to-Emitter Voltage, VCE - V ITR09063 IC -- VCE --1.0 IB=0 0 --5 Collector-to-Emitter Voltage, VCE - V Collector Current, IC - A 1mA 0 ITR09065 Rev.0 I Page 2 of 5 I www.onsemi.com 10 20 30 40 Collector-to-Emitter Voltage, VCE - V 50 ITR09066 2SB1144/2SD1684 IC -- VBE --1.6 IC -- VBE 1.6 --1.2 --0.8 --0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V 5 5 3 7 --1.0 3 5 7 0.01 3 2 2SD1684 100 2SB1144 7 5 3 2 10 5 7 0.1 2 3 5 7 1.0 2 3 ITR09070 Cob -- VCB 2SB1144 / 2SD1684 f=1MHz 5 3 2SB 2 114 4 2SD 168 4 10 7 5 3 For PNP, minus sign is omitted. 5 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 2 3 3 2 --1000 7 5 3 2 25C 7 C Ta=75 5 --25 3 7 --0.01 2 3 5 C 7 --0.1 2 3 Collector Current, IC - A 7 1.0 2 3 5 7 --1.0 2 ITR09073 5 7 2 10 3 5 7 100 2 ITR09072 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 2SB1144 IC / IB=10 --100 For PNP, minus sign is omitted. 5 ITR09071 VCE(sat) -- IC 5 2 3 Collector Current, IC - A 7 Output Capacitance, Cob -- pF 5 2 100 2SB1144 / 2SD1684 VCE=10V 7 5 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2 ITR09069 f T -- IC 7 Gain-Bandwidth Product, fT - MHz 5 --25C 25C 3 7 5 3 Ta=75C 5 10 1000 2SD1684 VCE=5V 7 7 5 2 1.2 ITR09068 hFE -- IC 100 10 7 --0.1 1.0 2 2 5 0.8 5 2 Collector Current, IC - A 0.6 7 DC Current Gain, hFE 7 3 0.4 1000 2SD1684 IC / IB=10 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV DC Current Gain, hFE --25C 100 2 0.2 3 2 5 7 --0.01 0 Base-to-Emitter Voltage, VBE - V 25C Ta=75C 3 0.4 ITR09067 2SB1144 VCE= --5V 7 0.8 0 --1.2 hFE -- IC 1000 1.2 Ta= 75 C 25C --25 C Collector Current, IC - A 2SD1684 VCE=5V Ta=7 5C 25C --25C Collector Current, IC - A 2SB1144 VCE= --5V 2 1000 7 5 3 2 100 25C 7 5 Ta=75C C --25 3 2 7 0.01 Rev.0 I Page 3 of 5 I www.onsemi.com 2 3 5 7 0.1 2 3 Collector Current, IC - A 5 7 2 1.0 ITR09074 2SB1144/2SD1684 VBE(sat) -- IC --10 5 3 2 25C --1.0 Ta= --25C 7 75C 5 3 2 5 3 2 1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 7 75C 5 3 3 5 7 0.01 ICP=2A DC 3 2 0.1 DC s 1m s 10m s 0m 10 IC=1.5A 1.0 7 5 op Tc erat =2 ion era 5 C tio nT a= 25 C op 7 5 3 2 Ta=25C, Single pulse For PNP, minus sign is omitted. 0.01 7 5 7 1.0 2 3 5 7 10 No 1.0 5 7 1.0 2 3 ITR09076 sin k 0.5 3 5 7 100 2 V ITR09077 0 8 7 6 5 4 3 2 1 0 80 he at 9 60 3 1.5 2SB1144 / 2SD1684 40 2 2SB1144 / 2SD1684 10 20 7 0.1 PC -- Ta PC -- Tc 0 5 0 2 Collector-to-Emitter Voltage, VCE - 11 3 2.0 2SB1144 / 2SD1684 Collector Dissipation, PC - W 2 2 Collector Current, IC - A ITR09075 ASO 3 Collector Dissipation, PC - W 25C Ta= --25C 2 5 7 --0.01 Collector Current, IC - A 2SD1684 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) - V Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 VBE(sat) -- IC 10 2SB1144 IC / IB=10 100 120 Case Temperature, Tc - C 140 160 ITR11794 Rev.0 I Page 4 of 5 I www.onsemi.com 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR09078 2SB1144/2SD1684 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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