Ordering number : ENN2041B
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com Publication Order Number:
2SB1144_2SD1684/D
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 021)–(V
egatloVrettimE-ot-rotcelloCV
OEC 001)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C5.1)–(A
)esluP(tnerruCrotcelloCI
PC 0.2)–(A
noitapissiDrotcelloCP
C5.1W
01W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
( ) : 2SB1144
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
Features
· Adoption of FBET and MBIT processes.
· High breakdown voltage.
· Large current capacity.
· Low saturation voltage.
· Plastic-covered heat sink facilitating high-density
mounting.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V001)–(= E0=001)–(An
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=001)–(An
niaGtnerruCCD hEF 1V
EC I,V5)–(= CAm001)–(=*001*004
hEF 2V
EC I,V5)–(= CA1)–(=03
tcudor
PhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm05)–(= )001(zHM
021zHM
* : The 2SB1144/2SD1684 are classified by 100mA hFE as follows : Continued on next page.
knaRRST
hEF 002ot001082ot041004ot002
4.0
1.0
1.0
8.0
1.6
0.8
0.8
0.75
1.5
7.5
3.0 1.4
11.0
15.5
3.3
3.0
0
.7
2.4 4.8
1.7
123
2SB1144/2SD1684
PNP/NPN Epitaxial Planar Silicon Transistors
100V/1.5A Switching Application
2SB1144/2SD1684
Rev.0 I Page 2 of 5 I www.onsemi.com
Switching Time Test Circuit
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=11)81(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am005)–(= BAm05)–(= )081–()005–(Vm
001003Vm
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am005)–(= BAm05)–(=58.0)–(2.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aμ01)–(= E0=021)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞001)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aμ01)–(= C0=6)–(V
emiTNO-nruTt
no tiucriCtseTdeificepseeS08)08(sn
emiTegarotSt
gts tiucriCtseTdeificepseeS 0001sn
)057(sn
emiTllaFt
ftiucriCtseTdeificepseeS05)04(sn
Continued from preceding page.
IC=10IB1= --10IB2=500mA
VRRB
VCC=50VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100Ω
100μF 470μF
PW=20μs
IB1
D.C.≤1% IB2
--1.6
--0.8
--0.4
--1.2
0
0 --1 --2 --5--4-- 3
IC -- V CE
IB=0
ITR09063
2SB1144
--1mA
--2mA
--3mA
--5mA
--10mA
--20mA
--50mA
--40mA
--30mA
--1.0
--0.6
--0.4
--0.2
--0.8
0
0 --10 --20 --50--40--30
IC -- V CE
IB=0
ITR09065
2SB1144
--2mA
--1mA
--3mA
--4mA
--7mA
--6mA
--5mA
1.0
0.6
0.4
0.2
0.8
0
01020 504030
IC -- V CE
IB=0
ITR09066
2SD1684
2mA
1mA
3mA
4mA
6mA
5mA
1.6
0.8
0.4
1.2
0
012 543
IC -- V CE
IB=0
ITR09064
1mA
2mA
3mA
5mA
10mA
20mA
50mA
40mA
30mA
2SD1684
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
2SB1144/2SD1684
Rev.0 I Page 3 of 5 I www.onsemi.com
0 0.2 0.4 0.6 0.8 1.21.0
1.6
1.2
0.8
0.4
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
--1.6
--1.2
--0.8
--0.4
0
IC -- VBE
ITR09067
Ta=75°C
25°C
--25°C
2SB1144
VCE= --5V
IC -- VBE
ITR09068
Ta=75°C
25°C
--25°C
2SD1684
VCE=5V
fT -- IC
ITR09071
Cob -- VCB
1.0 10
7
7
3
5
100
10
2
3
5
2
277355100
22735
ITR09072
hFE -- IC
2
3
5
7
1000
2
3
5
7
5
7
100
10
23 55--0.01 23 5
--0.1 23777 --1.0
2
3
5
7
1000
2
3
5
7
5
7
100
10
23 550.01 23 5
0.1 23777 1.0
2
3
5
7
1000
2
3
5
7
5
7
100
10
23 550.01 23 5
0.1 23777 1.0
ITR09069
2SB1144
VCE= --5V
Ta=75°C
25°C
--25°C
hFE -- IC
ITR09070
Ta=75°C
25°C
--25°C
2SD1684
VCE=5V
2
5
7
3
2
5
7
3
2
5
3
--1000
--100
23 5777
--0.01 23 5
--0.1 2
--1.0
ITR09073
VCE(sat) -- IC
2SB1144
IC / IB=10
25°C
2
5
7
3
2
5
7
3
2
5
3
1000
100
23 5777
0.01 23 5
0.1 2
1.0
--25°C
Ta=75°C
ITR09074
VCE(sat) -- IC
25°C
Ta=
75°C
2SD1684
IC / IB=10
2SB1144 / 2SD1684
VCE=10V
2SB1144
2SD1684
2SB1144 / 2SD1684
f=1MHz
2SB1144
2SD1684
--25°C
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
For PNP, minus sign is omitted. For PNP, minus sign is omitted.
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–A
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–A
2SB1144/2SD1684
Rev.0 I Page 4 of 5 I www.onsemi.com
5
7
7
3
2
2
5
3
1.0
10
23 55777
0.01 23 5 23
0.1 1.0
A S O
1.0
0.01
0.1
3
2
5
7
3
5
7
7
3
2
2
1.0 10
2573100
2257357
ITR09077
5
7
7
3
2
2
5
3
--1.0
--10
23 55777
--0.01 23 5 23
--0.1 --1.0
ITR09075
VBE(sat) -- IC
2SB1144
IC / IB=10
25°C
75°C
Ta= --25°C
ITR09076
VBE(sat) -- IC
25°C
75°C
Ta=
--25°C
2SD1684
IC / IB=10
2SB1144 / 2SD1684
DC operation Ta=25°C
IC=1.5A
ICP=2A
DC operation
Tc=25°C
100ms
10ms
1ms
Ta=25°C, Single pulse
For PNP, minus sign is omitted.
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, P
C
–W
Collector Dissipation, P
C
–W
Ambient Temperature, Ta – ˚C
Case Temperature, Tc – ˚C
0
2.0
0.5
1.0
1.5
0 20 40 60 100 120 16014080
PC -- Ta
ITR09078
No heat sink
2SB1144 / 2SD1684
0
11
9
7
3
5
1
10
8
4
6
2
0 20 40 60 100 120 16014080
PC -- Tc
ITR11794
2SB1144 / 2SD1684
2SB1144/2SD1684
2SB1144_2SD1684/D
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