VS-16TTS16SPbF Series www.vishay.com Vishay Semiconductors Thyristor Surface Mount Phase Control SCR, 16 A FEATURES * Meets MSL level 1, per LF maximum peak of 260 C 2 Anode * Designed and JEDEC-JESD47 qualified J-STD-020, according * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D2PAK 1 Cathode 3 Gate APPLICATIONS * Input rectification (soft start) * Vishay input diodes, switches and output rectifiers which are in identical package outlines PRODUCT SUMMARY Package TO-263AB (D2PAK) Diode variation Single SCR IT(AV) 10 A VDRM/VRRM 1600 V VTM 1.4 V IGT 60 mA TJ - 40 C to 125 C DESCRIPTION The VS-16TTS16SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 m) copper 2.5 3.5 Aluminum IMS, RthCA = 15 C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 C/W 14.0 18.5 UNITS A Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS Sinusoidal waveform IRMS 10 16 VRRM/VDRM ITSM VT VALUES 10 A, TJ = 25 C dV/dt dI/dt UNITS A 1600 V 200 A 1.4 V 500 V/s 150 A/s - 40 to 125 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 C mA 1600 1600 10 TJ VOLTAGE RATINGS PART NUMBER VS-16TTS16SPbF Revision: 19-Jun-13 Document Number: 94590 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS16SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 144 10 ms sine pulse, no voltage reapplied 200 2000 A2s 1.4 V 24.0 m 1.1 V t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 10 A, TJ = 25 C Maximum reverse and direct leakage current Holding current Maximum latching current IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt A 10 ms sine pulse, rated VRRM applied I2t rt UNITS 16 Maximum I2t for fusing VT(TO) MAX. 10 I2t On-state slope resistance TYP. TC = 93 C, 180 conduction, half sine wave Maximum I2t for fusing Threshold voltage VALUES TJ = 125 C TJ = 25 C TJ = 125 C 0.5 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 C A2s 10 100 150 mA Anode supply = 6 V, resistive load,TJ = 25 C 200 TJ = TJ max. linear to 80 % VDRM = Rg - k = Open 500 V/s 150 A/s TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS VALUES UNITS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum average gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 C 90 Anode supply = 6 V, resistive load, TJ = 25 C 60 Anode supply = 6 V, resistive load, TJ = 125 C 35 Anode supply = 6 V, resistive load, TJ = - 10 C 3.0 Anode supply = 6 V, resistive load, TJ = 25 C 2.0 Anode supply = 6 V, resistive load, TJ = 125 C 1.0 TJ = 125 C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 19-Jun-13 TEST CONDITIONS TJ = 25 C TJ = 125 C 0.9 4 s 110 Document Number: 94590 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS16SPbF Series www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature UNITS - 40 to 125 TS For 10 s (1.6 mm from case) 260 Maximum thermal resistance, junction to case RthJC DC operation 1.3 Typical thermal resistance, junction to ambient RthJA PCB mount (1) 40 C C/W Approximate weight 2 g 0.07 oz. Case style D2PAK (SMD-220) Marking device 16TTS16S Maximum Allowable Case Temperature (C) 125 16TTS.. Series R thJC (DC) = 1.3 C/W 120 115 Conduction Angle 110 105 100 30 60 95 90 120 180 90 0 2 4 6 8 10 12 Max imum Average On-state Power Loss (W) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note #AN-994. 18 180 120 90 60 30 16 14 12 RMS Limit 10 8 Conduction Angle 6 16TTS.. Series T J = 125C 4 2 0 0 Maximum Allowable Case Temperature (C) 125 16TTS.. Series R thJC (DC) = 1.3 C/W 115 Conduction Period 110 105 100 30 60 90 120 95 180 DC 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Revision: 19-Jun-13 2 3 4 5 6 7 8 9 10 11 Fig. 3 - On-State Power Loss Characteristics Max imum Average On-state Power Loss (W) Fig. 1 - Current Rating Characteristics 120 1 Average On-state Current (A) Average On-state Current (A) 25 DC 180 120 90 60 30 20 15 RMS Limit 10 Conduction Period 5 16TTS.. Series TJ = 125C 0 0 2 4 6 8 10 12 14 16 18 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94590 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS16SPbF Series 180 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 80 1 10 200 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 180 160 140 120 100 16TTS.. Series 80 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half C ycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 16TTS.. Series 100 10 T J = 25C TJ = 125C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V) Transient Thermal Impedance Z thJC (C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 16TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 19-Jun-13 Document Number: 94590 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS16SPbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD TJ = -10 C TJ = 125 C 1 TJ = 25 C Instantaneous Gate Voltage (V) 100 IGD 16TTS.. Series 0.1 0.001 0.01 (3) (4) (2) (1) Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 16 T T S 16 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - Circuit configuration: TRL PbF 8 9 T = Single thyristor 4 - Package: 5 - Type of silicon: T = TO-220AC S = Standard recovery rectifier 6 - Voltage rating: Voltage code x 100 = VRRM (16 = 1600 V) 7 - S = TO-220 D2PAK (SMD-220) version 8 - None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16TTS16SPbF 50 1000 Antistatic plastic tubes VS-16TTS16STRRPbF 800 800 13" diameter reel VS-16TTS16STRLPbF 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Revision: 19-Jun-13 Document Number: 94590 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-16TTS16SPBF VS-16TTS16STRLPBF