A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
VBR IR = 10 µA 4.0 V
VF IF = 1.0 mA 375 mV
∆
∆∆
∆VF IF = 1.0 mA 10 mV
IR VR = 1.0 V 100 nA
RD IF = 5.0 mA 20 Ω
ΩΩ
Ω
∆
∆∆
∆RD IF = 5.0 mA 3.0 Ω
ΩΩ
Ω
CT VR = 0 V f = 1.0 MHz 0.10 pF
∆
∆∆
∆CT VR = 0 V f = 1.0 MHz 0.02 pF
TSS
γ
γγ
γ
RV
Zero Bias, Zero Bias, f = 10 GHz
PIN = -30 dBm RL = 10 MΩ
Video Badwidth = 2.0 MHz
-46
17
1.4
dBm
mV/µW
MΩ
ΩΩ
Ω
BEAM LEAD SCHOTTKY DIODE
HSCH5531
DESCRIPTION:
The ASI HSCH5531 is a Low Barrier
Beam Lead Schottky Diode Designed
for K- Band Mixer Applications.
MAXIMUM RATINGS
IF 25 mA
VR 4.0 V
PDISS 150 mW @ TA = 25 °C
TJ -65 °C to +175 °C
TSTG -65 °C to +200 °C
PACKAGE STYLE 711
