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PTH 31002
30 Watts, 1.9–2.0 GHz
50-Ohm Power Hybrid
Package A
Typical Output Power vs. Input Power
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1 1.2
Input Power (W)
Output Power (W)
1.96 GHz
1.99 GHz1.93 GHz
VDD = 28.0 V
TCASE = +25ºC
Description
The PTH 31002 is a 50–ohm power hybrid intended for applications
requiring linear power amplification in the PCS frequency range. The
part is designed to operate with 50–ohm source and load impedances
and includes bias circuitry with temperature compensation. The design
is intended to simplify system design and save space with an overall
size of less than one square inch.
Guaranteed Performance at 1.93 to 1.99
GHz, 28 V
- Output Power = 30 Watts (P-1dB) Min
- Power Gain = 12 dB Min
- Efficiency = 30% Min @ P-1dB
Rugged Hybrid Design
High Single Stage Gain
Excellent Linearity
Input VSWR less than 1.5:1
Full Gold Metallization
100% Lot Traceability
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31002
A-12345699XX
Performance Characteristics
Parameter VDD = 28.0 V, IDQ (Typical) = 550 mA Symbol Min Typ Max Units
Frequency Range f 1930 1990 MHz
Power Gain Gp12 14 dB
Output Power at 1 dB Compressed P-1dB 30 34 W
Input VSWR y 1.25:1 1.5:1
Efficiency at P-1dB h 30 35 %
All published data at TCASE = 25°C unless otherwise indicated.
PTH 31002
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Typical Performance
Power Gain vs. Output Power
8
10
12
14
16
18
0 1020304050
O ut put Power ( W )
Power Gain (dB)
1. 96 GHz
1. 93 GHz
1. 99 GHz
VDD = 28.0 V
TCASE = +25ºC
15
20
25
30
35
19 22 25 28
Supply V oltage (V)
TCASE = +2C
1.93 GHz
1.96 GHz
1.99 GHz
Output Power (W
)
Output Power (at P-1 d B) vs. Supply Voltage
Efficiency vs. Output Po wer
(at constant voltage)
10
20
30
40
50
5 10152025303540
Output Power (W)
Efficiency (%
)
TCASE = +2C
VDD = 28.0 V
1. 93 GHz
1. 99 GHz
1. 96 GHz
Efficiency vs. Output Po wer
(at constant frequency)
10
20
30
40
50
60
5 10152025303540
Output Power (W)
Efficiency (%
)
TCASE = +2C
f = 1.96 GHz
22 V
25 V
28 V
Maximum Ratings
Parameter Symbol Value Unit
Supply Voltage VDD 32 Vdc
Bias Current IDQ 1000 mA
Operating Current 4.5 A
Operating Temperature TCASE 90 °C
Total Device Dissipation at T CASE = 25°C PDTBD Watts
Above 25°C derate by W/°C
Storage Temperature TSTG 125 °C
PTH 31002
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Gain and Return Loss vs. Frequency
-30
-25
-20
-15
-10
-5
0
1.85 1.9 1.95 2 2.05
Frequency (GHz)
Return Loss (dB)
0
3
6
9
12
15
18
Gain (dB)
TCASE = +2C
POUT = 1.4 W
VDD = 28.0 V
Gain
Return Loss
Small Signal Gain vs. Supply Voltage
10
12
14
16
18
12 16 20 24 28
Supply V oltage (V)
Small Signal Gain (dB
)
TCASE = +2C
POUT = 1.4 W
1. 93 GHz
1. 96 GHz
1. 99 GHz
-75
-65
-55
-45
-35
-25
0 5 10 15 20 25 30 35
Output Power (Watts PEP)
IMD (dBc)
3rd Order
5t h Order
7t h Order
Intermodulation Dist ortion vs. Output Pow er
VDD = 28.0 V , TCASE = 25ºC
f = 1.96 GHz, f = 100 KHz
IMD 3 vs. Supply Voltage
-55
-45
-35
-25
-15
19 22 25 28
Supply V oltage (V)
IMD3 (dBc)
POUT = 30 W PE P
POUT = 16 W PE P
POUT = 8 W PEP
POUT = 4 W PEP
f = 1.96 GHz, f = 100 KHz
TCASE = 25ºC
IMD vs. Q uiescent Current
-75
-70
-65
-60
-55
-50
-45
490 540 590 640
Quiesc ent Current (mA)
IMD (dBc)
3rd Order
5t h Order
7t h Order
f = 1.96 GHz, f = 100 KHz
TCASE = 25ºC, POUT = 4 W(PEP)
Phase Delay vs. Frequency
1.5
2.0
2.5
3.0
1.9 1.92 1.94 1.96 1.98 2 2.02
Frequency (GHz)
Phase Delay (ns)
TCASE = +2C
POUT = 1.4 W
PTH 31002
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Schematic
Phase Linearit y vs. Temp erature
0.5
0.6
0.7
0.8
0.9
1.0
-20020406080100
Temperatu re ( ºC )
Phase Linearity (deg.)
VDD = 28.0 V
POUT = 1.4 W
Quiescent Current vs. B ias Volt age
0
200
400
600
800
1000
1200
9 10111213
Bias Voltage (V)
Quiescent Current (mA)
TCASE = +2C
VDD = 28.0 V
PTH 31002
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Package Mechanical Specifications
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LP
© 1998 Ericsson Inc.
EUS/KR 1301-PTH 31002 Uen Rev. A 07-21-99
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com\rfpower
Package A
Unless otherwise specified, all tolerances are ±.005.